• Title/Summary/Keyword: Donor layer

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Effect of Surface Modification of Donor Plate on the Fabrication of OLED Devices by LITI Process

  • Bae, Heung-Kwon;Kim, Jin-Hoo;Kwon, Hyeok-Yong;Lee, Yoon-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.784-786
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    • 2009
  • Thermal transfer of emitting layer from the donor film to the substrates depends on the physical interaction between the donor film, the emitting layer, and the hole-transport layer (HTL). The interfacial adhesion between the donor film and the EML, the cohesive force of the EML, and the interfacial adhesion between the EML and the HIL have to be optimized to achieve good LITI pattern quality. It was found that surface pretreatment of the donor plate was important on the laser induced thermal transfer of the emitting layer onto the HIL layer of the OLED devices.

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Performance Comparison of CuPc, Tetracene, Pentacene-based Photovoltaic Cells with PIN Structures

  • Hwang, Jong-Won;Kang, Yong-Su;Park, Seong-Hui;Lee, Hye-Hyun;Jo, Young-Ran;Choe, Young-Son
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.311-312
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    • 2010
  • The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

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Dielectric Properties and a Equivalent Circuit of ZnO-Based Varistor (ZnO 바리스터의 유전특성과 등기회로)

  • Rho, Il-Soo;Kang, Dae-Ha
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2166-2172
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    • 2007
  • In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

Simultaneous two-layer harvesting of scalp split-thickness skin and dermal grafts for acute burns and postburn scar deformities

  • Oh, Suk Joon
    • Archives of Plastic Surgery
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    • v.46 no.6
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    • pp.558-565
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    • 2019
  • Background The scalp, an excellent donor site for thin skin grafts, presents a limited surface but is rich in stem cells. The purpose of this study was to test a double harvesting procedure from the scalp and to evaluate the capacity of the dermal layer. Methods Two layers corresponding to a split-thickness skin graft (SSG) and a split-thickness dermal graft (SDG) were harvested from the scalp using a Zimmer dermatome during the same procedure. Healing of the scalp donor site, reason for recipient site grafting, and the percentage of graft loss were evaluated. Results Fourteen patients, comprising six men and eight women with a mean age of 34.2 years, were treated according to our protocol. The most common reason for a recipient site graft was a postburn scar deformity (10/14 patients). The mean area of scalp SSGs was 151.8 cm2. The mean area of scalp SDGs was 88.2 cm2. The mean healing time of scalp donors was 9.9 days. The only donor complication was a tufted scar deformity. Conclusions Skin defects in the scalp of donors healed faster and led to less scarring than defects at other donor sites. Scalp SDGs needed 10 days for adequate epithelization. The scalp was the best donor site for SSGs and SDGs for burn reconstructive patients.

Effect of the Deep Donor Level on the Interface Electron Density ($Al_xGa_{1-x}As$-GaAs 이종접합에서 deep donor level 이 interface electron density에 미치는 영향)

  • Nam, Seaung-Hyun;Jung, Hak-Kee;Lee, Moon-Key;Kim, Bong-Ryul
    • Proceedings of the KIEE Conference
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    • 1987.07a
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    • pp.465-468
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    • 1987
  • This paper describes a model to calculate the equilibrium electron density of MODFET at the interface that takes into account the simultaneous shallow and deep level in the Al-GaAs layer. In the present study we have made an investigation of the interface electron density with different values of the AlGaAs doping density and spacer layer thickness, considering simultaneously two doner levels. In this case, the ratio of the shallow to the deep donor concentraction is considered. From the comparison with early experimental results we could find the deep level and that the deep donor concentration is about 50% with the Al mole fraction X ${\sim}0.3$, activation energy Edx=65meV, temperature $77^{\circ}K$ and spacer thickness range $50A{\sim}100A$. Also we have investigated the effect of the temperature. As temperature increase, at critical mole fraction X the nature of the donor concentration changes from $\Gamma$ to L and X.

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The effect of sintering temperature on the electrical properties of ZnO ceramics (ZnO세라믹스의 소결온도가 전기적 특성에 미치는 영향)

  • 김용혁;이덕출
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.40-47
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    • 1995
  • Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

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Improvement of Leakage Current in Ferroelectric Thin Films Formed by 2-step Sputtering (2단계 스퍼터링으로 형성시킨 강유전 박막의 누설전류 개선)

  • Mah Jae-Pyung;Shin Yong-In
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.1 s.38
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    • pp.17-22
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    • 2006
  • Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.

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Effects of Glycerin and PEG 400 in Donor and Receptor Solutions upon Skin Permeation of Drug (In vitro 경피흡수 실험시 Donor와 Receptor용액중의 글리세린과 PEG 400이 약물의 경피투과도에 미치는 영향)

  • Cho, Ae-Ri
    • Journal of Pharmaceutical Investigation
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    • v.26 no.2
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    • pp.99-103
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    • 1996
  • Effects of glycerin and PEG 400 in donor and receptor solutions upon skin permeation of drug were investigated. Deoxycortisone was used as a model compound. In vitro skin permeation study with freshly excised hairless mouse skin was performed and the steady-state skin permeation rates of the drug were determined in different fractions of glycerin or PEG 400 in donor and receptor solutions. Glycerin in donor solution didn't show any effect on the skin permeation rate of deoxycortisone. However glycerin in receptor solution showed significant effect on the skin permeation rate of the drug. In glycerin, there's a critical concentration for balancing hydration and dehydration of skin. At low concentration, less than 20 %, glycerin showed the enhancement of the flux due to the hydration effect of skin. At high concentration, more than 30 %, glycerin retard the permeation rate which might be due to the dehydration effect on the dermis layer. Since dermis has more water content than the stratum corneum, the steady state skin permeation rates were more influenced when glycerin was in receptor solution than that of in donor solution. PEG 400 aqueous solutions doesn't affect the steady state permeation rate of deoxycortisone significantly.

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An Improvement of the Characteristics of DSSC by Each Layers - II (- Property Improvement and Measuring System) (각 층에 따른 염료감응형 태양전지의 특성 개선 - II (-특성증진 및 측정기를 중심으로))

  • Mah, Jae-Pyung;Park, Chi-Sun
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.2
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    • pp.65-71
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    • 2011
  • Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

Complications of Donor Site in Latissimus Dorsi Muscle Flap (광배근 피판의 공여부에 대한 문제점의 분석)

  • Chung, Duke-Whan;Han, Chung-Soo;Cho, Chang-Hyun
    • Archives of Reconstructive Microsurgery
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    • v.8 no.2
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    • pp.149-153
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    • 1999
  • Purpose : To investigate the complication of donor site in latissimus dorsi muscle flap. Materials and Methods : From April 1983 to March 1999, forty patients with latissimus dorsi muscle flap for reconstruction of extremity and with a follow-up period of more than 12 months were included. We analysed the complication, shoulder function, degree of shoulder muscle weakness, skin scar width after operation. Results After 1 year, skin scar widening in 12 cases(30%), limitation of shoulder motion in 9 cases(12.5%), muscle weakness in 14 cases(17.5%) were found. Conclusion. The rate of complication at donor site after latissimus dorsi flap operation is around 10%. To minimize the complication, avoiding axillary skin incision, minimal invasive harvesting by endoscopy, meticulous suturing of subcutaneous layer are needed.

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