• 한국초전도ㆍ저온공학회논문지
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• 제24권4호
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• pp.1-5
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• 2022

We investigate the effect of surface disorder on the lower critical field (H_c1) of MgB₂ thin films with a thickness of 850 nm, where the disorder on the surface region is produced by the irradiation of 140 keV Co ions with the dose of 1 × 10¹⁴ ions/cm². The thickness of the damaged region by the irradiation is around 143 nm, corresponding to ~17% of the whole thickness of the film, thereby forming the disordered MgB₂ overlayer on the pure MgB₂ layer. The magnetic field dependence of magnetization, M(H), for the pristine MgB₂ thin film and the film with overlayer is measured at various temperatures, and H_c1 is determined from the difference (△M) between the Meissner line and magnetization signal with the criterion of △M = 10^-3 emu. Intriguingly, the film with the disordered overlayer shows a remarkably large H_c1(0) = 108 Oe compared to the H_c1(0) = 84 Oe of pristine film, indicating that the disordered MgB₂ overlayer on the pure MgB₂ layer serves to prevent the penetration of vortices into the sample. These results provide new ideas for improving the superheating field to design high-performance superconducting radio-frequency cavities.

• International Journal of Contents
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• 제9권4호
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• pp.11-15
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• 2013

"Protein Folding Problem" is considered to be one of the "Great Challenges of Computer Science" and prediction of disordered protein is an important part of the protein folding problem. Machine learning models can predict the disordered structure of protein based on its characteristic of "learning from examples". Among many machine learning models, we investigate the possibility of multilayer perceptron (MLP) as the predictor of protein disorder. The investigation includes a single hidden layer MLP, multi hidden layer MLP and the hierarchical structure of MLP. Also, the target node cost function which deals with imbalanced data is used as training criteria of MLPs. Based on the investigation results, we insist that MLP should have deep architectures for performance improvement of protein disorder prediction.

• 분석과학
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• 제5권3호
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• pp.303-308
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• 1992

Ti과 Si의 초기 반응이 Titanium Silicide의 표면 거칠기 (Surface roughness)를 고찰하기 위해 연구하였다. 형성기구는 In-situ AES와 LEED의 측정장비로 연구하였다. Ti의 하나나 두 원자층이 초고진공에서 원자적으로 깨끗한 Si 기판 위에 증착되었다. Reconstruction이 된 $7{\times}7$ Si(111) 표면이 초 고진공하에서 얻어졌으며 박막의 증착은 Quartz Crystal Oscillator로 측정되었다. In-situ 측정 결과 Ti과 Si의 초기 반응이 실온에서 일어났으며 Disorder막을 형성하였다. 낮은 온도($200^{\circ}C{\sim}300^{\circ}C$)에서 Ti과 Si의 Intermixing이 고찰되었고 $400^{\circ}C$ 근처에서 $1{\times}1$ Si(111) LEED 패턴이 관찰되었다. 이것은 Disorder막이 Order막으로 변화가 생긴 것을 나타낸다. 더 높은 온도에서 $7{\times}7$ Si(111) LEED 패턴이 재관찰되었는데 이것은 3차원적인 $TiSi_2$의 형성을 증명하는 것이다.

• Plant Resources
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• 제3권3호
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• pp.163-172
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• 2000

We compared microstructural features of the ordered cell and disordered leaves in Citrus junos Sieb. by electron microscopy. In the cell of the ordered leaves, many chloroplasts and large vacuoles were particularly observed. Also a lot of vessel, companion cell and big nucleus were presented in vascular bundle regions. The mitochondria and the other organelles were interspersed among the chloroplasts in a thin, peripheral layer of cytoplasm. The chloroplast possessed typical grana and intergranal lamellae, numerous starch grains and a few small osmophilic globules. Besides, microbodies were closely associated with the mitochondria and the chloroplast. The process of the formation of the secondary cell wall from primary cell wall was observed the vessel elements, the tonoplast wall and the secondary cell wall. It was observed that the oil sac with the unique perfume distributed the adjacent cell wall. In the cell of disordered leaves, the all of the organelles were thrust toward the cell wall due to the fusion of vacuoles in the cells. It was observed that a lot of the very small particles spreaded in the cytoplasm. The loss of unique perfume of the leaves was resulted in the destruction of the oil sac. Also, there was not observed grana, lamellae, starch and osmophillic globules in the chloroplast. The small distributed organelles was not observed but the elongation of the cell wall was proceed no longer. Therefore, the plasma membrane diverged from the cell wall. All of organelles in the cell had poor function and deformation. A massive vacuole was fulfilled in single cell and the vacuole contains a lot of large and small particles. The organelles were presented on the side of the cell wall according to the enlargement of vacuole and they were observed to be breakdown.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1998년도 제28회 추계학술대회
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• pp.25-29
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• 1998

Sliding wear test and surface characterization techniques such as micro-Raman spectroscopy were employed to determine the effect of whisker content and orientation on the friction and wear behavior of SiC whisker reinforced alumina. Composites containing unidirectionally oriented whiskers were fabricated by novel technique Addition of SiC whiskers up to 20 vol.% lowered the friction and improved wear resistance. The results of this study indicated that highly disordered graphite and size of the layer behind the whiskers were responsible for variation of wear rate and friction coefficient.

• 한국광물학회지
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• 제10권2호
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• pp.97-104
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• 1997

Based on the method of determination for relative stability of each phase from the difference among the interaction parameters of the phases consisting the mixed layer, the types of interactions between layers were specified and interaction parameter between layers in ordered domain was analytically derived as a function parameter between layers in ordered domain was analytically derived as a function of not only temperature and mole fraction of layers but also ordering parameter. Interaction parameter between the different layers in ordered phase, L is as follows:{{{{ {L }_{1 } (X,Q,T)= { C} over { Q} -4(1-2Q) { L}^{2 } - { RT} over {2} ln { 1} over {2 } - { 2RT} over { { X}_{ s} } ln { { 4QX}`_{s } ^{2 } } over {(1- { X}_{s }- { QX}_{s })( { X}_{s }- {QX }_{s } ) } }}}}L2 is the interaction parameter between ordered and disordered phase in domain and is the mole fraction of the domain which represent the infinite length of mixed layer mineral and Q and C are the reaction progress parameter and arbitrary constant, respectively. This equation was used for the I/S mixed layer clay minerals to infer the relative stability of R1 type I/S mixed layer in the temperature range from 373K to 450K. The result of calculation suggest that, owing to the decrease in interaction parameter with increasing temperature. The interaction parameter decreases more rapidly with decreasing mole fraction of smectite in domain, which is consistent with the fact that the probability of finding the series smectite layer is lo in the domain with small mole fraction of smectite layers in natural system.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Corrosion Science and Technology
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• 제2권4호
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• pp.171-177
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• 2003

The electronic properties of the passive film formed on Fe-20Cr ferritic stainless steel in pH 8.5 buffer solution containing 0.05 M EDTA (ethylene diammine tetraacetic acid) were examined by the photocurrent measurements and Mott-Schottky analysis for the film. XPS depth profile for the film demonstrated that Cr content in the outermost layer of the passive film was higher in the solution with EDTA than that in the solution without EDTA, due to selective dissolution of Fe by EDTA. In the solution with EDTA, the passive film showed characteristics of an amorphous or highly disordered n-type semiconductor. The band gap energies of the passive film are estimated to be ~ 3.0 eV, irrespective of film formation potential from 0 to 700 $mV_SCE$ and of presence of EDTA. However, the donor density of the passive film formed in the solution with EDTA is much higher than that formed in the solution without EDTA, due to an increase in oxygen vacancy resulted from the dissolution of Fe-oxide in the outermost layer of the passive film. These results support the proposed model that the passive film formed on Fe-20Cr in pH 8.5 buffer solution mainly consists of Cr-substituted $\gamma$-$Fe_2O_3$.

• 한국광물학회지
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• 제24권3호
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• pp.165-178
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• 2011

우리나라 육상의 제3기 포항분지와 백악기 경상분지, 그리고 동해와 서해의 대륙붕 퇴적분지에 대하여 일라이트-스멕타이트 점토광물 변화에 의하여 퇴적층 온도를 인지하고, 이를 근거로 하여 석유생성과의 관련성을 연구하였다. 포항분지는 불규칙배열의 일라이트-스멕타이트만 산출되며, 이것은 석유가 생성되기 어려운 $100^{\circ}C$ 이하의 매우 낮은 온도를 지시한다. 이에 반해, 경상분지는 일라이트만 산출되면, 일라이트 결정도 값에 의하면 이 지역은 $200^{\circ}C$ 이상의 높은 온도를 지시한다. 따라서 경상분지는 석유생성 단계를 이미 지난 상태인 것으로 생각된다. 동해의 대륙붕 지역은 상위 지층에서 불규칙배열의 일라이트-스멕타이트가 산출되지만, 약 2,500 m 이상의 매몰심도에서는 석유생성을 기대할 수 있는 온도를 지시하는 R=1 규칙배열의 일라이트-스멕타이트가 신출된다. 서해 대륙붕 지역은 상위 구간에서는 불규칙 배열의 일라이트-스멕타아트(R=0 I-S)가 나타나며, 중간의 구간에서는 R=1 규칙배열의 일라이트-스멕타이트(R=1 I-S)가 나타나고, 하위의 심부 구간에서는 R=3 규칙배열의 일라이트-스멕타이트(R=3 I-S)가 나타난다. 이 지역은 석유생성단계에서 가스생성 단계에 이르는 양호한 탄화수소 생성의 온도 조건을 보여주고 있다. 일라이트-스멕타이트 점토광물로 측정된 온도는 우리나라 육상분지에서는 석유가 존재하기 어렵다는 것을 보여준다. 그러나 대륙붕 지역은 석유와 가스를 생성하기 좋은 온도조건이므로 석유가스의 발견이 기대된다.