• Title/Summary/Keyword: Disordered layer

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Enhancement of lower critical field of MgB2 thin films through disordered MgB2 overlayer

  • Soon-Gil, Jung;Duong, Pham;Won Nam, Kang;Byung-Hyuk, Jun;Chorong, Kim;Sunmog, Yeo;Tuson, Park
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.4
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    • pp.1-5
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    • 2022
  • We investigate the effect of surface disorder on the lower critical field (Hc1) of MgB2 thin films with a thickness of 850 nm, where the disorder on the surface region is produced by the irradiation of 140 keV Co ions with the dose of 1 × 1014 ions/cm2. The thickness of the damaged region by the irradiation is around 143 nm, corresponding to ~17% of the whole thickness of the film, thereby forming the disordered MgB2 overlayer on the pure MgB2 layer. The magnetic field dependence of magnetization, M(H), for the pristine MgB2 thin film and the film with overlayer is measured at various temperatures, and Hc1 is determined from the difference (△M) between the Meissner line and magnetization signal with the criterion of △M = 10-3 emu. Intriguingly, the film with the disordered overlayer shows a remarkably large Hc1(0) = 108 Oe compared to the Hc1(0) = 84 Oe of pristine film, indicating that the disordered MgB2 overlayer on the pure MgB2 layer serves to prevent the penetration of vortices into the sample. These results provide new ideas for improving the superheating field to design high-performance superconducting radio-frequency cavities.

Protein Disorder Prediction Using Multilayer Perceptrons

  • Oh, Sang-Hoon
    • International Journal of Contents
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    • v.9 no.4
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    • pp.11-15
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    • 2013
  • "Protein Folding Problem" is considered to be one of the "Great Challenges of Computer Science" and prediction of disordered protein is an important part of the protein folding problem. Machine learning models can predict the disordered structure of protein based on its characteristic of "learning from examples". Among many machine learning models, we investigate the possibility of multilayer perceptron (MLP) as the predictor of protein disorder. The investigation includes a single hidden layer MLP, multi hidden layer MLP and the hierarchical structure of MLP. Also, the target node cost function which deals with imbalanced data is used as training criteria of MLPs. Based on the investigation results, we insist that MLP should have deep architectures for performance improvement of protein disorder prediction.

Initial Reactions of Ti on the Atomically Clean Si Substrates (초청정한 Si 기판 위에서 Ti의 초기 반응)

  • Jeon, Hyeongtag;Nemanich, R.J.
    • Analytical Science and Technology
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    • v.5 no.3
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    • pp.303-308
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    • 1992
  • Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.

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Microstructural Characteristics of the Ordered and Disordered Leaves in Citrus junos Sieb.

  • Park, Min-Hee;Boo, Hee-Ock;Kim, Hong-Sub;Lee, Sook-Young
    • Plant Resources
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    • v.3 no.3
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    • pp.163-172
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    • 2000
  • We compared microstructural features of the ordered cell and disordered leaves in Citrus junos Sieb. by electron microscopy. In the cell of the ordered leaves, many chloroplasts and large vacuoles were particularly observed. Also a lot of vessel, companion cell and big nucleus were presented in vascular bundle regions. The mitochondria and the other organelles were interspersed among the chloroplasts in a thin, peripheral layer of cytoplasm. The chloroplast possessed typical grana and intergranal lamellae, numerous starch grains and a few small osmophilic globules. Besides, microbodies were closely associated with the mitochondria and the chloroplast. The process of the formation of the secondary cell wall from primary cell wall was observed the vessel elements, the tonoplast wall and the secondary cell wall. It was observed that the oil sac with the unique perfume distributed the adjacent cell wall. In the cell of disordered leaves, the all of the organelles were thrust toward the cell wall due to the fusion of vacuoles in the cells. It was observed that a lot of the very small particles spreaded in the cytoplasm. The loss of unique perfume of the leaves was resulted in the destruction of the oil sac. Also, there was not observed grana, lamellae, starch and osmophillic globules in the chloroplast. The small distributed organelles was not observed but the elongation of the cell wall was proceed no longer. Therefore, the plasma membrane diverged from the cell wall. All of organelles in the cell had poor function and deformation. A massive vacuole was fulfilled in single cell and the vacuole contains a lot of large and small particles. The organelles were presented on the side of the cell wall according to the enlargement of vacuole and they were observed to be breakdown.

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Tribological Behavior of the Alumina Reinforced with Unidirectionally Oriented SiC whiskers (일방향성 배열을 가잔 SiC whisker에 의해 강화된 알루미나 복합체의 마모마찰 특성)

  • 간태석;임대순;한병동
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1998.10a
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    • pp.25-29
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    • 1998
  • Sliding wear test and surface characterization techniques such as micro-Raman spectroscopy were employed to determine the effect of whisker content and orientation on the friction and wear behavior of SiC whisker reinforced alumina. Composites containing unidirectionally oriented whiskers were fabricated by novel technique Addition of SiC whiskers up to 20 vol.% lowered the friction and improved wear resistance. The results of this study indicated that highly disordered graphite and size of the layer behind the whiskers were responsible for variation of wear rate and friction coefficient.

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Calculation of Interaction Parameters in Mixed Layer Minerals and their Application (층상형 혼합광물의 상호작용계수의 계산 및 응용)

  • 이성근;김수진
    • Journal of the Mineralogical Society of Korea
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    • v.10 no.2
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    • pp.97-104
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    • 1997
  • Based on the method of determination for relative stability of each phase from the difference among the interaction parameters of the phases consisting the mixed layer, the types of interactions between layers were specified and interaction parameter between layers in ordered domain was analytically derived as a function parameter between layers in ordered domain was analytically derived as a function of not only temperature and mole fraction of layers but also ordering parameter. Interaction parameter between the different layers in ordered phase, L is as follows:{{{{ {L }_{1 } (X,Q,T)= { C} over { Q} -4(1-2Q) { L}^{2 } - { RT} over {2} ln { 1} over {2 } - { 2RT} over { { X}_{ s} } ln { { 4QX}`_{s } ^{2 } } over {(1- { X}_{s }- { QX}_{s })( { X}_{s }- {QX }_{s } ) } }}}}L2 is the interaction parameter between ordered and disordered phase in domain and is the mole fraction of the domain which represent the infinite length of mixed layer mineral and Q and C are the reaction progress parameter and arbitrary constant, respectively. This equation was used for the I/S mixed layer clay minerals to infer the relative stability of R1 type I/S mixed layer in the temperature range from 373K to 450K. The result of calculation suggest that, owing to the decrease in interaction parameter with increasing temperature. The interaction parameter decreases more rapidly with decreasing mole fraction of smectite in domain, which is consistent with the fact that the probability of finding the series smectite layer is lo in the domain with small mole fraction of smectite layers in natural system.

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Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

  • Woo, Hyeonseok;Kim, Jongmin;Cho, Sangeun;Jo, Yongcheol;Roh, Cheong Hyun;Kim, Hyungsang;Hahn, Cheol-Koo;Im, Hyunsik
    • Applied Science and Convergence Technology
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    • v.26 no.3
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    • pp.52-54
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    • 2017
  • An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

Effects of Edta on the Electronic Properties of Passive Film Formed on Fe-20Cr In pH 8.5 Buffer Solution

  • Cho, EunAe;Kwon, HyukSang;Bernard, Frederic
    • Corrosion Science and Technology
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    • v.2 no.4
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    • pp.171-177
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    • 2003
  • The electronic properties of the passive film formed on Fe-20Cr ferritic stainless steel in pH 8.5 buffer solution containing 0.05 M EDTA (ethylene diammine tetraacetic acid) were examined by the photocurrent measurements and Mott-Schottky analysis for the film. XPS depth profile for the film demonstrated that Cr content in the outermost layer of the passive film was higher in the solution with EDTA than that in the solution without EDTA, due to selective dissolution of Fe by EDTA. In the solution with EDTA, the passive film showed characteristics of an amorphous or highly disordered n-type semiconductor. The band gap energies of the passive film are estimated to be ~ 3.0 eV, irrespective of film formation potential from 0 to 700 $mV_SCE$ and of presence of EDTA. However, the donor density of the passive film formed in the solution with EDTA is much higher than that formed in the solution without EDTA, due to an increase in oxygen vacancy resulted from the dissolution of Fe-oxide in the outermost layer of the passive film. These results support the proposed model that the passive film formed on Fe-20Cr in pH 8.5 buffer solution mainly consists of Cr-substituted $\gamma$-$Fe_2O_3$.

Mineral Temperatures of the Sedimentary Basins for Petroleum Resources Exploration, Korea (국내 석유자원탐사 퇴적분자의 광물온도)

  • Son, Byeong-Kook
    • Journal of the Mineralogical Society of Korea
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    • v.24 no.3
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    • pp.165-178
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    • 2011
  • The potential of petroleum generation was investigated by clay mineralogical changes of illite-smectite on the sedimentary basins: Tertiary Pohang basin and Cretaceouls Gyeongsang basin on land, and offshore basins east and west of Korea. Only disordered illite-smectite mixed layer minerals occur in the Pohang sediment, where petroleum generation cannot be expected due to low temperatures below $100^{\circ}C$. By contrast, the Gyeongsang basin is characterized by the occurrence of illite and high temperatures above $200^{\circ}C$ which are obtained by illite crystallinity. The high temperatures indicate that the Gyeongsang sediment ha, already passed through the oil generation stage. The change of disordered illite-smectite to R-l ordered illite-smectite is shown in the sediment of the East Sea continental shelf area at a depth of 2,500 m. Therefore, the oil generation can be expected in the sediments below the depth of 2,500 m. The sequential change of disordered illite-smectie to R=3 ordered illite-smectite through R=l ordered illite-smectite occurs in the sediments of West Sea continental shelf area with burial depth which shows the favorable condition for oil and gas generation. The temperatures of sediments measured by illite-smectite indicate that hydrocarbon potential is very low in the onland basins but high in the continental shelf areas.