• 소성∙가공
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• 제32권5호
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• pp.239-246
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• 2023

To reduce the forming load due to the temperature drop, during the hot forging process, a reheating hot forging process design is required that to repeat heating and forging. However, if the critical strain required for recrystallization is not induced during forging and grain growth becomes dominant due to the reduction in dislocation density due to repeated heating, the mechanical properties may deteriorate. Therefore, in this study, Inconel 706 alloy was applied, and the grain refinement behavior was comparatively analyzed according to the number of reheating times and effective strain during reheating hot forging process. Reheating was carried out with a total compression rate of 40% up to 4 times. The Inconel 706 compression test specimens heated once showed finer grains as the effective strain increased due to the dynamic recrystallization phenomenon. However, as the number of heating increases, grain refinement was observed even in a low effective strain distribution of 0.43 due to static recrystallization during reheating. Moreover, grain growth occurs at a relatively low effective strain of 0.43 when the number of reheating is four or more. Therefore, it was effective to apply an effective strain of 0.43 or more during hot forging to Inconel 706 in order to induce crystallization through grain refinement and improve the properties of forged products. In addition, we could notice that up to three reheating times condition was appropriate to prevent grain growth and maintain fine grain size.

• 한국재료학회지
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• 제33권9호
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• pp.360-366
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• 2023

This study focuses on how the partial substitution of copper by nickel nanoparticles affects the electrical and structural properties of the Bi₂Ba₂Ca₂Cu_2.9Ni_0.1O_10+δ, Bi₂Ba₂Ca₂Cu_2.8Ni_0.2O_10+δ and Bi₂Ba₂Ca₂Cu_2.6Ni_0.4O_10+δ compounds. Approximate values of crystallization size and crystallization percentage for the three compounds were calculated using the Scherer, modified Scherer, and Williamson-Hall methods. A great similarity was observed in the crystal size values from the Scherer method, 243.442 nm, and the Williamson-Hall method, 243.794 nm for the second sample. At the same time this sample exhibited the highest crystal size value for the three methods. In the examination of electrical properties, the sample with 0.1 partial substitution, Bi₂Ba₂Ca₂Cu_2.9Ni_0.1O_10+δ was determined to be the best with a critical temperature of 100 K and an energy gap of 6.57639 × 10^-21 MeV. Using the SEM technique to analyze the structural morphology of the three phases, it was discovered that the size of the granular forms exceeds 25 nm. It was determined that the samples' shapes alter when nickel concentration rises. The patterns that reveal the distribution of the crystal structure also exhibit clear homogeneity.

• 한국분말재료학회지
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• 제31권2호
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• pp.152-162
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• 2024

The directed energy deposited (DED) alloys show higher hardness values than the welded alloys due to the finer microstructure following the high cooling rate. However, defects such as microcracks, pores, and the residual stress are remained within the DED alloy. These defects deteriorate the wear behavior so post-processing such as heat treatment and hot isostatic pressing (HIP) are applied to DED alloys to reduce the defects. HIP was chosen in this study because the high pressure and temperature uniformly reduced the defects. The HIP is processed at 1150℃ under 100 MPa for 4 hours. After HIP, microcracks are disappeared and porosity is reduced by 86.9%. Carbides are spherodized due to the interdiffusion of Cr and C between the dendrite and interdendrite region. After HIP, the nanohardness (GPa) of carbides increased from 11.1 to 12, and the Co matrix decreased from 8.8 to 7.9. Vickers hardness (HV) decreased by 18.9 % after HIP. The dislocation density (10^-2/m²) decreased from 7.34 to 0.34 and the residual stress (MPa) changed from tensile 79 to a compressive -246 by HIP. This study indicates that HIP is effective in reducing defects, and the HIP DED Stellite 6 exhibits a higher HV than welded Stellite 6.

• 한국압력기기공학회 논문집
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• 제20권1호
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• pp.16-24
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• 2024

Denting of steam generator (SG) tube is defined as the reduction in tube diameter due to the stresses exerted by the corrosion products formed on the outer diameter surface. This phenomenon is mostly observed in the crevices between SG tube and the top-of tubesheet or tube support plate. Despite the replacement of SG tube with Alloy 690, which has better corrosion resistance than Alloy 600, the denting of SG tube still remains a potential problem that could decrease the SG integrity. Deformation of SG tube by denting phenomenon can affect the surface properties and microstructure of SG tube. In this study, the effects of plastic deformation on surface properties and microstructure of Alloy 690 thermally treated (TT) tube was investigated by using the various analysis techniques. The plastic deformation of Alloy 690 increased the surface roughness and area. Many surface defects such as ripped surface and micro-cracks were observed on the deformed Alloy 690TT specimen. Based on the electron backscatter diffraction analysis, the dislocation density of deformed SG tube increased compared to non-deformed SG tube. In addition, the effects of changes in surface properties and microstructure of SG tube on general corrosion behavior were discussed.

• 소성∙가공
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• 제33권5호
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• pp.348-353
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• 2024

The S355NL steel has garnered attention as a structural material for applications in extremely challenging environments owing to its excellent mechanical properties. This study investigated the hot deformation behavior of S355NL steel through compression tests conducted in a temperature range of 900-1200℃ and a strain rate range of 10^-3-1 s^-1 to explore the optimal processing parameters. The flow behaviors consisted of an initial rapid increase and subsequent plateau with a marginal decrease in stress. This phenomenon was interpreted in terms of microstructural evolution, such as dislocation density and dynamic recrystallization. The efficiency of power dissipation and instability domains were derived using the dynamic material model based on the compression test dataset, providing a series of processing maps. In contrast to conventional processing maps plotted for a single strain value, this study has established ten maps at a strain interval of 0.1. This approach allowed for the consideration of continuously variable strain parameters, which is inherent to an actual metal-forming process. The efficiency of power dissipation was strongly governed by the high temperatures (≥ 1100℃). The strain rates barely affected the efficiency, but it primarily contributed to the instability domains. The application of high strain rates (≥ 10^-1s^-1) generated a region of negative instability due to the absence of dynamic recrystallization and the presence of cracks at grain boundaries.

• 한국결정성장학회지
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• 제27권2호
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• pp.89-93
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• 2017

다양한 성장온도, V/III 비율, 성장속도과 같은 공정변수의 조절을 통하여 GaN 단결정을 성장시키고, 그에 따른 표면 및 재료 내부의 결함분석을 통하여 고휘도 고출력의 소자적용을 위한 bulk GaN 단결정의 두께를 최적화하였다. 2인치 직경의 sapphire 기판 위에 HVPE(hydride vapor phase epitaxy) 공정변수들을 조절하여, 0.3~7.0 mm 두께의 GaN 결정을 성장시켰다. 성장된 GaN 단결정의 구조분석을 위하여 XRD 분석을 사용하였고, 공정변수의 변화에 따른 표면 특성은 광학 현미경을 이용하여 관찰하였다. 성장된 두께에 따른 결함밀도 분석을 위하여 화학습식 에칭하였고, 에칭된 표면을 SEM으로 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• 한국결정성장학회지
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• 제21권3호
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• pp.114-118
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• 2011

본 논문에서는 육각형 GaN 피라미드의 꼭지점 부분에만 나노 혹은 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방볍에 대하여 연구하였다. 최적화된 포토리소그라피 공정을 이용하여 육각형 GaN 피라미드 구조의 꼭지점 부분의 $SiO_2$ 마스크 영역만을 제거할 수 있었으며, 이렇게 하여 노출된 육각형 GaN 피라미드의 꼭지점 부분에만 metal organic vapor phase epitaxy(MOVPE) 결정 성장방법을 사용하여 나노 및 마이크로 크기의 GaN 구조를 선택적으로 성장하였다. GaN 피라미드 꼭지점 부근에 형성된 나노 및 마이크로 G값J 구조는 semi-polar {1-101} 결정면으로 둘러싸인 육각 피라미드 형상을 하고 있으며 그들의 크기는 성장 시간에 의해 쉽게 조절할 수 있음을 확인하였다. TEM 관측 결과, 측면 방향으로 진행하는 관통전위들이 $SiO_2$ 마스크에 의해 효율적으로 차단되어 나노 및 마이크로 GaN 구조에서는 전위 밀도가 감소하는 것을 확인할 수 있었으나 $SiO_2$ 마스크의 끝부분의 매끄럽지 못한 부분에 의해 적층 결함이 발생함을 확인하였다.