• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.793-798
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• 2000

The age-hardening behavior of unreinforced 6061 Al alloy and SiCp/6061 Al alloy composites reinforced with different size of SiC particle (average diameter ; 0.7$\mu\textrm{m}$ and 7.0$\mu\textrm{m}$) was investigated by hardness measurement, calorimetric technique and transmission electron microscopy. At 17$0^{\circ}C$ isothermal aging treatment, the peak aging time of 0.7$\mu\textrm{m}$SiCp/6061Al alloy composite and 7.0$\mu\textrm{m}$SiCp/6061Al alloy composite is shorter than that of unreinforced 6061Al alloy, and the aging of 7.0$\mu\textrm{m}$SiCp/6061Al alloy composite is accelerated more than that of 0.7$\mu\textrm{m}$SiCp/6061Al alloy composite. This acceleration is due to the increase of dislocation density by the compositeness with SiCp and the SiC particle size. In the peak aged condition, the major strengthening phase of these materials is intermediate $\beta$ phase(Mg$_2$Si), and the activation energy for the formation of $\beta$ phase is considerably decreased by the compositeness with SiCp and the increasing of SiC Particle site.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.93-98
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• 2005

The crystal growth of calcite at a low temperature range was carried out by the hydrothermal method using amorphous calcium carbonate which has excellent solubility in water. Amorphous calcium carbonate was prepared by the wet chemical reaction of a stoichiometric mixture of $CaCl_2\;and\;Na_2CO_3$. An important factor was the reaction temperature and time taken in preparation of the amorphous calcium carbonate. From the solubility results calculated by the weight loss method, $NH_4NO_3$ solutions were found to be the most promising solvents to grow calcite single crystals. The hydrothermal conditions for high growth rates of calcite single crystals were as follows: starting material: amorphous calcium carbonate, solvent: 0.01 m $NH_4NO_3$, temperature: $180^{\circ}C$, duration: 30 days. And properties of calcite single crystals were follows: dislocation density: $10^6{\sim}10cm^{-2}$, UV-visible transmittance: about 80% from 190 to 400 nm and birefringence: $0.17{\sim}0.18$. Also, it can be known from the FT-IR results that the absorption peak by injection of $HCO_3^-\;and\;OH^-$ ions was not shown.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.600-607
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• 1994

Optimum exper~mental conditions were established for the growth of heteroepitaxial GaAs layers on InP using liquid phase epitaxy (LPE) technique. Results showed that the optimum growth temperature was $720^{\circ}C$ at a cooling rate of $0.5^{\circ}C$/min. Surface morphology of the grown layers significantly improved by addition of about 0.005wt% Se to the Ga growth melt, which effectively suppressed melt-back of InP substrates into the melt during the initial stage of growth. It was observed that the quality of GaAs layers also improved substantially when the substrates patterned with grating structure were used, as determined by the (400) double crystal X-ray diffraction. The transmission electron microscopy observation indicated t.hat the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.787-795
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• 2018

The effects of tempering condition on the microstructure and mechanical properties of 30MnB5 hot stamping steel were investigated in this study. Before the tempering, hot-stamped 30MnB5 steel was composed of only ${\alpha}^{\prime}$-martensite microstructure without precipitates. After the tempering at $180^{\circ}C$ for 120 min, nano-sized ${\varepsilon}$-carbides were precipitated in the ${\alpha}^{\prime}$-martensite laths. After tempering at $250^{\circ}C$ for 60 min, cementite was precipitated along the ${\alpha}^{\prime}$-martensite lath boundaries. The cementite was also observed in the specimens tempered at $350^{\circ}C$ for 30 min and $450^{\circ}C$ for 6 min, respectively. The globular ${\alpha}$-ferrite appeared at $350^{\circ}C-30min$ tempering, and the volume fraction of ${\alpha}$-ferrite increased when the tempering temperature was increased. The yield strength increased after tempering, and it reached a peak with the tempering condition of $180^{\circ}C-120min$, due to the nano-sized precipitates in the ${\alpha}^{\prime}$-martensite lath. After the tempering, the steel's ultimate tensile strength (UTS) was decreased due to the reduction in dislocation density and C segregation to lath boundaries. The highest elongation was observed at the $180^{\circ}C-120min$ tempering condition, due to the reduction of residual stress, and the lack of precipitates along the lath boundaries. The $180^{\circ}C-120min$ tempering condition was considered to have outstanding crash performance, according to toughness and anti-intrusion calculation results. In drop tower crash tests, the 30MnB5 door impact beam tempered at $180^{\circ}C$ for 120 min showed better crash performance compared to a 22MnB5 door impact beam.