• 열처리공학회지
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• 제18권1호
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• pp.3-11
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• 2005

Using various thermo-mechanical schedules characterized by varying reheating temperature, deformation temperature and strain, the austenite recrystallization and ferrite refinement of a Nb bearing low carbon steel(0.15C-0.25Si-1.11Mn-0.04Nb) were investigated. For single pass heavy deformations at $800^{\circ}C$, the 40% deformed austenite was not recrystallized while the 80% deformed one was fully recrystallized. Ferrite grains formed in the 80% deformed specimen was not very small compared with those in the 40% deformed specimen, which implied the recrystallized austenite was not more beneficial to ferrite refinement than the non-recrystallized one. In case of deformation in low temperature austenite region, a multi-pass deformation made finer ferrites than a single-pass deformation, as the total reduction was the same, due to more ferrite nucleation sites in the non-recrystallization of austenite for multi-pass deformation. When specimen was deformed at $775^{\circ}C$ that was $10^{\circ}C$ higher than $Ar_3$, the ferrite of about $1{\mu}m$ was formed through deformation induced ferrite transformation(DIFT), and the amount of ferrite was increased with increasing reduction. Dislocation density was very high and no carbides were observed in DIFT ferrites, presumably due to supersaturated carbon solution. By deformation in two phase(50% austenite+50% ferrite) region the very refined ferrite grains of less than $1{\mu}m$ were formed certainly by recovery and recrystallization of deformed ferrites and, a large portion of ferrites were divided by subgrain boundaries with misorientation angles smaller than 10 degrees.

• 한국진공학회지
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• 제12권S1호
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• pp.95-99
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• 2003

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

• 열처리공학회지
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• 제7권1호
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• pp.44-52
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• 1994

In order to investigate the effect of tempring treatment on the mechanical properties of ausformed martensite in Fe-30%Ni-0.35%C alloy, the hardness, yield strength and elongation were examined by tensile test. 1. The strength of deformed austenite in Fe-30%Ni-0.35%C alloy was increased due to the work hardening induced from the dislocation density increased during deformation. The strength of ausformed martensite was increased because of defects inherited from deformed austenite by martensitic transformation. 2. The ductility of ausformed martensite was shown a nearly constant values independent of deformation degrees because of the interaction of multiple factors such as increased retained austenite, formation of void and decrement of twin in ausformed martensite. 3. The strength of ausformed martensite by tempering treatment was shown a little decrement up to $340^{\circ}C$, especially showed remarkable softening resistance in higher deformation degrees. 4. Virgin martensite and ausformed martensite were shown a maximum yield strength by clustering in tempering at $100^{\circ}C$ and above $100^{\circ}C$, yield strength was very small decreased due to the decrement of solute carbon by the destruction of clustering. 5. The decomposition of retained austenite was not shown up to $450^{\circ}C$ in ausformed martensite with tempering treatment, and the matrix was rapidly softening because of the decomposition of martensite and the formation of reversed austenite with tempering above $400^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Current Photovoltaic Research
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• 제2권3호
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.99-99
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• 2008

대구경, 고품질 GaN 단결정 기판은 HVPE 방법을 이용하여 제조하였다. 이때 성장 방법은 기판인 $Al_2O_3$ 단결정 기판을 질화처리 하였으며, 이종기판 성장 시 야기되는 격자 불일치와 성장 후 냉각동안에 열팽창 계수의 불일치로 야기되는 휨이나 crack 발생을 제거하기 위하여 step-growth 방법을 사용하였다. 사파이어 위에 성장된 GaN의 기판은 두께가 380um이며, 직경은 3"로 crack 발생은 없었으며, $600^{\circ}C$에서 레이저 분리 방법을 이용하여 사파이어와 분리하였다. 그러나 분리된 기판은 이종기판과의 접촉면에서 고밀도 결함발생으로 인하여 휨이 발생하였으며, 표면을 연마한 후 DCXRD의 FWHM은 107 arcsec, PL을 이용한 결함밀도는 $6.2\times10^6/cm^2$으로 나타났다.

• 한국자기학회지
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• 제19권3호
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• pp.100-105
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• 2009

차세대 발전소재로 주목 받고 있는 초초임계압 페라이트기 강의 고온 등온열화손상을 평가하였다. 고온 등온열화에 따른 가역 투자율을 측정하여 미세조직 변화와의 상관성과 그 영향에 관하여 연구하였다. 고온 등온열화는 미세한 템퍼링 석출물($Cr_{23}C_6$)을 성장시키고, 새로운 금속간 화합물($Fe_2W$)을 생성시켰으며 급격한 조대화를 보였다. 또한, 래스 내부의 전위밀도를 크게 감소시켰다. 가역투자율로부터 측정한 동적 보자력은 등온열화 초기 약 500시간 이내에 급격하게 감소하고 이후 서서히 감소하였다. 이는 자벽에 대한 고착점의 개수감소와 밀접한 관련이 있으며, 미세한 석출물, 전위 및 마르텐사이트 래스와 관련된다.

• 한국결정학회지
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• 제9권1호
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• pp.30-38
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• 1998

주파수 무게센서를 장착한 자동직경제어 방식에 의해 Bi12GeO20 단결정을 쵸크랄스키법으로 육성하였다. 회전속도에 따른 계면모양의 변화를 관찰하기 위해, 회전속도를 변화시키면서 육성한 결과, 23-21rpm에서 평평한 계면이 형성되었다. Bi2O3의 휘발에 의한 화학 양론적 조성으로부터 이탈에 따른 Bi4Ge3O12의 생성과 이로 인한 색 변화를 관찰하기 위해, Bi2O3의 함량을 0.1-1mol% 보충한 결과, 0.3mol% 증발 보상을 하였을 때, 내포물이 적은 연한 갈색의 광학용 단결정을 육성할 수 있었다. 이러한 성장조건 하에서 직경 25mm x 길이 70mm 인 거의 일정한 직경을 갖는 단결정이 육성되었고 결함밀도는 103개/cm2를 나타내었다. XRD및 TEM에 의해 단결정의 우선 성장방향을 측정한 결과<110>이었다.

• 한국결정학회지
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• 제6권2호
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• pp.141-157
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• 1995

직경자동제어장치를 이용한 초크라스키법에 의해 대형 TeO2 단결정을 공기 중에서 성장시켰다. 온도구배를 가능한 한 적게 한 성장조건 하에서 단결정과 도가니의 직경비율을 60-70% 범위에서 양질의 단결정 성장이 가능하였다. 이 때 결정의 품질을 좌우하는 주요 요인은 인상 및 회전 속도였다. 무색 투명한 고품질 단결정을 육성하기 위한 인상속도는 1.2mm/hr 이하였고, 고액계면은 10-23 rpm 이하일 때 볼록하였으며, 25 rpm 이상일 때 오목하였다. 단결정의 성장은 {110} 방향의 종자결정을 사용하였다. 용융체 내의 백금 함량이 증가하면 조성적 과냉이 발생하여, 성장되는 결정 내에 기포가 포획되므로 성장된 단결정의 질이 저하된다. 적외선 측정결과 파수 2,000cm-1 이상에서 완전 투명하였고, 전위밀도를 측정 결과 직경자동제어를 이용한 경우 3×103/cm2 - 2×104/cm2로 양호하였으며 수동성장인 경우도 결정과 도가니의 직경비율이 40-45%의 범위에서는 매우 양호하였다. 또한 포유물 등 불순물에 혼입 원인에 대하여 논하였다.

• 한국재료학회지
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• 제21권6호
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• pp.334-340
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• 2011

Saw wires have been widely used in industries to slice silicon (Si) ingots into thin wafers for semiconductor fabrication. This study investigated the microstructural and mechanical properties, such as abrasive wear and tensile properties, of a saw wire sample of 0.84 wt.% carbon steel with a 120 ${\mu}M$ diameter. The samples were subjected to heat treatment at different linear velocities of the wire during the patenting process and two different wear tests were performed, 2-body abrasive wear (grinding) and 3-body abrasive wear (rolling wear) tests. With an increasing linear velocity of the wire, the tensile strength and microhardness of the samples increased, whereas the interlamellar spacing in a pearlite structure decreased. The wear properties from the grinding and rolling wear tests exhibited an opposite tendency. The weight loss resulting from grinding was mainly affected by the tensile strength and microhardness, while the diameter loss obtained from rolling wear was affected by elongation or ductility of the samples. This result demonstrates that the wear mechanism in the 3-body wear test is much different from that for the 2-body abrasive wear test. The ultra-high tensile strength of the saw wire produced by the drawing process was attributed to the pearlite microstructure with very small interlamellar spacing as well as the high density of dislocation.