• Journal of Korea Foundry Society
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• v.35 no.2
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• pp.23-28
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• 2015

This work presents the effect of the cooling rate on the precipitation of super duplex stainless steel. Specimens of super duplex stainless steel with a specific composition were cooled at various cooling rates after being melted at $1550^{\circ}C$ in a directional solidification furnace. Ferrite (${\delta}$), Austenite (${\gamma}$), Sigma (${\sigma}$), and Chi (${\chi}$) phases were precipitated when the cooling rate was lower than 0.22 K/s. When the cooling rate was 0.22 K/s or faster, ${\sigma}$ and ${\chi}$ phases were not precipitated.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.2
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• pp.16-20
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.629-630
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• 2006

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.149-156
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• 1993

Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.19-24
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• 2009

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.536-542
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• 1990

Single crystals of YBa2Cu3O7-x have been grown in BaCuO2 flux at temperature of 125$0^{\circ}C$ and examined using XRD, EDAX and light microscopy. The YBCO crystals were grown in a cavity which was formed by the reduction of CuO and became large by the directional solidification in the crucible. The observed crystal growth habit is square planar with the c-axis normal to the plane. The surface morphology of grown crystals were growth ledges and growth sprial paterns on a (001) face.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.45-50
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• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.187-192
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• 1998

Generally the solidified microstructures of materials consist of the columnar and equiaxed dendritic regions, and many theoretical studies about columnar-to-equiaxed transition have been done because that is closely related to the mechanical and physical properties of products. In this study, the modified equation based on the Hunt's analytical columnar-to-equiaxed transition condition which was derived from heterogeneous nucleation and grain growth in front of the columnar dendrite tip under directional solidification, was obtained applying the growth-velocity-dependent distribution coefficient and liquidus slope to Hunt's. The effects of the number of nucleation sites, nucleation temperature, alloy composition, growth velocity and liquid temperature gradient on the transition for Al-Cu alloys have been investigated.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.580-586
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• 2002

The effect of processing and designing variables such as pouring temperature(1400 or $1500^{\circ}C$), inoculation and risering design(T and H type) on the formation of defects such as external depression, primary and secondary shrinkage cavities in GC150 gray cast iron was investigated. In T type risering design, external depression or primary shrinkage cavity due to liquid contraction was formed in all of the eight cases. Regardless of its modulus value, the riser could not function properly in T type risering design because directional solidification was not promoted toward the riser. On the other hand, the four cases of H type risering design in which thermal sleeves were set onto the risers produced defect-free castings. In both types of the risering designs, secondary shrinkage cavity caused by solidification contraction was not observed in the casting because of the expansion pressure due to graphite precipitation and the application of rigid pep-set mold. The degree of external depression or primary shrinkage cavity was reduced with lowered pouring temperature. The effect of inoculation was diminished because of the high carbon equivalent of GC 150 gray cast iron.