• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.9
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• pp.49-56
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• 2020

High temperature heat generated during rifle firing not only degrades the performance of the weapon, but also limits the user's operation. In this study, temperature change of handguard according to firing was measured with reference to Human Engineering criteria and the operability according to material was examined. Accordingly, for the firing test, three types of Korean rifle and one overseas model were selected for each material of handguard, and firing test was conducted using a contact type temperature meter. The test result shows that using a plastic handguard with low thermal conductivity and aluminum handguard with high thermal conductivity enabled the rifles to be operated with bare hands even when firing at more than 100 rounds at low atmospheric temperature. However, when firing more than 60 rounds at over 20℃ atmospheric temperature, aluminum handguard use is limited. When firing quickly over 100 rounds, handguard use is restricted regardless of its fabrication material. To eliminate operational limitations by overheating, it is necessary to eliminate direct contact with skin using gloves, vertical grips, etc. This study examined the operability of rifles in terms of thermal risk, and the resulting study results are expected to be used as basic data for Human Engineering of other rifles and munitions.

• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.11-15
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• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.189-194
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• 2014

In this study, from a new x-ray detector that combines a columnar CsI:Na scintillation layer with a photosensitive mercuric iodide layer was investigated. In this structure, X-rays are converted into visible light on a thick CsI:Na layer, which is then converted to electric charges in a thin $HgI_2$ bottom layer. The thin coplanar mercuric iodide films as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of phosphor layer, were simulated and designed. The results of this research suggest that the new coplanar x-ray detector with a hybrid-type structure can resolve the following problems: high voltage from the a-Se, and low conversion efficiency from the indirect conversion method. The results of this research suggest that the new CsI:Na/$HgI_2$ x-ray detector with a double-layer type structure can resolve the following problems: high voltage from the direct conversion method, and low conversion efficiency from the indirect conversion method.

• Journal of Oral Medicine and Pain
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• v.30 no.2
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• pp.257-268
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• 2005

It is recently suggested in Korea that Resource-Based Relative Value Scale (RBRVS) is an alternative plan of Korean Dental Fee Schedule which has been operated on a fee-for-service basis since the introduction of the national health insurance program in 1977. RBRVS applicable to diagnosis and treatment for temporomandibular disorders (TMD), a common cause of orofacial pain, is needed to be estimated in Korea and the establishment of the standard terminology of dental procedures for TMD should be preceded. The purposes of this study were to develop a new classification system of health care service items for TMD and to investigate time needed for each item, which enables RBRVS to be estimated prior to establishment the payment system of health care services for TMD. The dental service items for TMD in this study were categorized through Delphi process which 10 TMD specialists were participated in and the time needed for each service item was investigated by work sampling and time study method with a stopwatch. The results of this study demonstrated the new classification system of dental services for TMD comprising 151 service items and exhibited the average time for each items ranging from 7.22 min for cold laser therapy to 171.71 min for direct fabrication of anterior repositioning splint. Conclusively, it is suggested that the classification system for TMD developed in this study, considering specific characteristics on basis of resources for health care service of dental procedures, should be helpful to estimate payment level for each service item.

• Clean Technology
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• v.24 no.1
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• pp.9-14
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• 2018

In this study, Material life cycle evaluation was performed to analyze the environmental impact characteristics of TiN-Zr membrane manufacturing process. The software of MLCA was Gabi. Through this, environmental impact assessment was performed for each process. Transition metal nitrides have been researched extensively because of their properties. Among these, TiN has the most attention. TiN is a ceramic materials which possess the good combination of physical and chemical properties, such as high melting point, high hardness, and relatively low specific gravity, high wear resistance and high corrosion resistance. With these properties, TiN plays an important role in functional materials for application in separation hydrogen from fossil fuel. Precursor TiN was synthesized by sol-gel method and zirconium was coated by ball mill method. The metallurgical, physical and thermodynamic characteristics of the membranes were analyzed by using Scanning Electron Microscope (SEM), Energy Dispersive X-ray (EDS), X-ray Diffraction (XRD), Thermo Gravimetry/Differential Thermal Analysis (TG/DTA), Brunauer, Emmett, Teller (BET) and Gas Chromatograph System (GP). As a result of characterization and normalization, environmental impacts were 94% in MAETP (Marine Aquatic Ecotoxicity), 2% FAETP (Freshwater Aquatic Ecotoxicity), 2% HTP (Human Toxicity Potential). TiN fabrication process appears to have a direct or indirect impact on the human body. It is believed that the greatest impact that HTP can have on human is the carcinogenic properties. This shows that electricity use has a great influence on ecosystem impact. TiN-Zr was analyzed in Eco-Indicator '99 (EI99) and CML 2001 methodology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.2
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• pp.208-215
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• 2021

In this study, a customiz ed bridge system was developed for North Korea application. For the application of North Korea, the customized bridge system design, fabrication, and construction performance evaluation were performed using ultra-high performance concrete a compressive strength 120MPa or more and a direct tensile strength 7MPa or more. The comparison of the North Korean truck luggage load(30, 40, 55) and the Korean standard KL-510 load showed that cross-section increased as the load increased. Furthermore, a bridge with a span length of 30m was fabricated with ultra-high performance concrete for the construction performance evaluation. The evaluation of the load condition analysis was performed by a flexural test. The results showed that a bridge with a span length of 30m secured about 167% of sectional performance under initial cracking load conditions and about 134% of load bearing capacity under ultimate load conditions. As a result of economic analysis, the customized bridge system using ultra-high-performance concrete was less than about 11% of the upper construction cost compared to the steel composite girder bridge. Therefore, these results suggest that the price competitiveness can be secured when applying the ultra-high-performance concrete long-span bridge developed through this study.