• Title/Summary/Keyword: Direct Fabrication

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Fabrication of nickel nanoparticles-embedded carbon particles by solution plasma in waste vegetable oil

  • Pansuwan, Gun;Phuksawattanachai, Surayouth;Kerdthip, Kraiphum;Sungworawongpana, Nathas;Nounjeen, Sarun;Anantachaisilp, Suranan;Kang, Jun;Panomsuwan, Gasidit;Ueno, Tomonaga;Saito, Nagahiro;Pootawang, Panuphong
    • Journal of Advanced Marine Engineering and Technology
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    • v.40 no.10
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    • pp.894-898
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    • 2016
  • Solution plasma is a unique method which provides a direct discharge in solutions. It is one of the promising techniques for various applications including the synthesis of metallic/non-metallic nanomaterials, decomposition of organic compounds, and the removal of microorganism. In the context of nanomaterial syntheses, solution plasma has been utilized to produce carbon nanoparticles and metallic-carbon nanoparticle systems. The main purpose of this study was to synthesize nickel nanoparticles embedded in a matrix of carbon particles by solution plasma in one-step using waste vegetable oil as the carbon source. The experimental setup was done by simply connecting a bipolar pulsed power generator to nickel electrodes, which were submerged in the waste vegetable oil. Black powders of the nickel nanoparticles-embedded carbon (NiNPs/Carbon) particles were successfully obtained after discharging for 90 min. The morphology of the synthesized NiNPs/Carbon was investigated by a scanning electron microscope, which revealed a good dispersion of NiNPs in the carbon-particle matrix. The X-ray diffraction of NiNPs/Carbon clearly showed the co-existence of crystalline Ni nanostructures and amorphous carbon. The crystallite size of NiNPs (through the Ni (111) diffraction plane), as calculated by the Scherrer equation was found to be 64 nm. In addition, the catalytic activity of NiNPs/Carbon was evaluated by cyclic voltammetry in an acid solution. It was found that NiNPs/Carbon did not show a significant catalytic activity in the acid solution. Although this work might not be helpful in enhancing the activity of the fuel cell catalysts, it is expected to find application in other processes such as the CO conversion (by oxidation) and cyclization of organic compounds.

Fabrication and characteristic analysis of High-Tc superconducting microstrip antennas using direct inset feeding technique (직접삽입 급전 방식을 이용한 고온초전도 마이크로스트립 안테나의 제작 및 특성 해석)

  • Chung, Dong-Chul;Han, Byoung-Sung;Kim, Jin;Ryu, Ki-Su;Hong, Suck-Yong;Lee, Jong-Ha
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.1
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    • pp.70-78
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    • 2000
  • In applying high-${\underline{T_c}}$ superconducting material to microwave devices, Uncertainty of electromagnetics of high-${\underline{T_c}}$ superconductor(HTS) and the temperature dependence of the substrate fits with HTS thin film cause difficulty in realization of such antenna for industrial applications. It must be noted to characteristic the HTS antenna in contrast with normal conducting counterpart for this real application. In this paper, a comparative study between HTS microstrip antennas and gold antennas was reported in terms of the return loss, the characteristic impedance, efficiency, and other various characteristics. HTS thin films were $YBa_2Cu_3O_{7-x}$ (YBCO) on MgO substrates. Superconducting microstrip antennas used in this work were to directly inset a microstrip transmission line into the 50 ${\Omega}$ region of the radiating patch. Measurement results of HTS antennas and gold antennas showed that usable antennas can be made using this architecture.

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Preparation of Silica Monoliths with Macropores and Mesopores and of High Specific Surface Area with Low Shrinkage using a Template Induced Method

  • Guo, Jianyu;Lu, Yan;Whiting, Roger
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.447-452
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    • 2013
  • In this study we report a new method for the synthesis of a silica monolithic column bed with bimodal pores (throughpores and mesopores). The template induced synthesis method was used to direct bimodal pores simultaneously instead of the usual post base-treating method. Block polymer Pluronic F127 was chosen as a dual-function template to form hierarchically porous silica monolith with both macropores and mesopores. This is a simplification of the method of monolithic column preparation. Poly(ethylene glycol) was used as a partial substitute for F127 can effectively prevent shrinkage during the monolith aging process without losing much surface area (944 $m^2/g$ to 807 $m^2/g$). More importantly, the resultant material showed a much narrower mesopore size (centered at 6 nm) distribution than that made using only F127 as the template reagent, which helps the mass transfer process. The solvent washing method was used to remove the remaining organic template, and it was proved to be effective enough. The new synthesis method makes the fabrication of the silica monolithic column (especially capillary column) much easier. All the structure parameters indicate that monolith PFA05 prepared by the above method is a good material for separation, with the merits of much higher surface area than usual commercial HPLC silica particles, suitable mesopore volume, narrow mesopore size distribution, low shrinkage and it is easily prepared.

투명 산화물 트랜지스터

  • Park, Sang-Hui;Hwang, Chi-Seon;Jo, Du-Hui;Yu, Min-Gi;Yun, Seong-Min;Jeong, U-Seok;Byeon, Chun-Won;Yang, Sin-Hyeok;Jo, Gyeong-Ik;Gwon, O-Sang;Park, Eun-Suk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.13.1-13.1
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    • 2009
  • Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.

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Fabrication of Nano Probe for Atomic Force Microscopy Using Electron Beam Direct Deposition Method (전자빔 직접 조사법을 이용한 AFM용 나노 프로브의 제작)

  • Park, Sung-Hwak;Yi, In-Je;Kim, Yong-Sang;Sung, Seung-Yeon;Kim, Jae-Wan;Choi, Y.J.;Kang, C.J.;Kim, Sung-Hyun;Shin, J.K.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1649-1650
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    • 2006
  • 반도체 소자의 선폭이 나노미터 스케일로 진입함에 따라 소자의 물리적 특성을 나노미터 스케일에서 정밀하게 측정하고자 하는 요구가 증대되고 있다. Atomic Force Microscopy (AFM)은 나노미터 이하의 해상도를 가지고 물질 표면의 기하하적, 전기적 특성 등을 측정할 수 있으므로 나노소자 연구에 필수적인 도구가 되었다. 그러나 AFM은 낮은 측정속도와 탐침의 기하학적 형상에 의한 AFM 영상의 왜곡 등과 같은 치명적인 단점도 가지고 있다. AFM의 낮은 측정 속도를 개선하기 위해서 진보된 마이크로머시닝기술을 이용하여 캔틸레버의 크기를 줄이거나 캔틸레버 위에 박막 구동기를 집적시키는 등의 노력이 진행되고 있으나, 이 경우 전통적인 식각 공정을 이용하여 캔틸레버 위에 tip을 형성하는 것이 매우 어렵다. 본 연구에서는 이미 제작된 캔틸레버 위에 전자빔 조사법을 이용하여 탄소상 tip을 직접 성장시킴으로써 전통적인 식각 공정에 비해 매우 간단하고 값싸며, 활용도가 높은 공정을 개발하였다. 탄소상 tip 성장에 필요한 탄소 소스는 dipping 방법을 이용하여 공급하였고, 시분할법을 사용하여 캔틸레버의 원하는 위치에 tip을 성장시킬 수 있었다. 이렇게 제작된 tip은 최대 $5{\mu}m$ 높이까지 가능했으며, 종횡비는 10:1 이상이어서 tip의 형상에 의한 AFM 영상 왜곡 현상을 최소화할 수 있을 것으로 기대된다.

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Fabrication of fiber-optic evanescent wave immunosensor and its measuring characteristics (광섬유 소산파를 이용한 면역 센서 제조 및 그 특성)

  • Choi, Ki-Bong;Youn, Hee-Ju;Cha, Seung-Hee;Choi, Jung-Do
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.356-361
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    • 1997
  • Fiber-optic evanescent wave sensor was designed and fabricated to detect mouse immunoglobulin G(IgG) with decladed optical fiber on which anti-mouse IgG was immobilized. A sensitivity obtained by any direct or competitive method was lower than $1\;{\mu}g/m{\ell}$. Anti-mouse IgG was immobilized on 93.9% of core surface of optical fiber by simple adsorption method. The effect of postcoating using bovine serum albumin to remove non-specific binding was not observed. As the ratio of fluorescein to mouse IgG increased, the fluorescence signal increased, but that increase showed no linear relationship. Our fiber-optic sensor system could be used as immunosensor by measuring evanescent fluorescence in antigen-antibody reaction with good sensitivity below $1{\mu}g/m{\ell}$ level.

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The Simulation and Forecast Model for Human Resources of Semiconductor Wafer Fab Operation

  • Tzeng, Gwo-Hshiung;Chang, Chun-Yen;Lo, Mei-Chen
    • Industrial Engineering and Management Systems
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    • v.4 no.1
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    • pp.47-53
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    • 2005
  • The efficiency of fabrication (fab) operation is one of the key factors in order for a semiconductor manufacturing company to stay competitive. Optimization of manpower and forecasting manpower needs in a modern fab is an essential part of the future strategic planing and a very important to the operational efficiency. As the semiconductor manufacturing technology has entered the 8-inch wafer era, the complexity of fab operation increases with the increase of wafer size. The wafer handling method has evolved from manual mode in 6-inch wafer fab to semi-automated or fully automated factory in 8-inch and 12-inch wafer fab. The distribution of manpower requirement in each specialty varied as the trend of fab operation goes for downsizing manpower with automation and outsourcing maintenance work. This paper is to study the specialty distribution of manpower from the requirement in a typical 6-inch, 8-inch to 12-inch wafer fab. The human resource planning in today’s fab operation shall consider many factors, which include the stability of technical talents. This empirical study mainly focuses on the human resource planning, the manpower distribution of specialty structure and the forecast model of internal demand/supply in current semiconductor manufacturing company. Considering the market fluctuation with the demand of varied products and the advance in process technology, the study is to design a headcount forecast model based on current manpower planning for direct labour (DL) and indirect labour (IDL) in Taiwan’s fab. The model can be used to forecast the future manpower requirement on each specialty for the strategic planning of human resource to serve the development of the industry.

Design and fabrication of PSK carrier recovery circuit using multi-layer coupled line (다층형 결합 선로를 이용한 반송파 복원 회로 설계 제작)

  • Kim, Young-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.10
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    • pp.2039-2044
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    • 2009
  • The PSK carrier signal recovery circuit using multi-layer coupled line was analyzed and designed. The fabricated carrier recovery 6 port element with multi-layer coupled line structure gets the simple architecture. It is possible to implement the carrier signal recovery circuit of the same structure with the multi-layer six port phase correlator of the direct receiver front-end. Based on the analysis of RML carrier recovery circuit using the multi-layer coupled line 6-port phase correlator, the multi-layer coupled line carrier signal recovery structure for multi-mode coherent demodulation was proposed. The fabricated multi-layer coupled line carrier signal recovery circuit for quadrature phase shift-keying shows a good carrier signal characteristic with a constant phase and phase error below ${\pm}3o$.

Fabrication Process of a Nano-precision Polydimethylsiloxane Replica using Vacuum Pressure-Difference Technique (진공 압력차이법에 의한 나노 정밀도를 가지는 폴리디메틸실록산 형상복제)

  • 박상후;임태우;양동열;공홍진;이광섭
    • Polymer(Korea)
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    • v.28 no.4
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    • pp.305-313
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    • 2004
  • A vacuum pressure-difference technique for making a nano-precision replica is investigated for various applications. Master patterns for replication were fabricated using a nano-replication printing (nRP) process. In the nRP process, any picture and pattern can be replicated from a bitmap figure file in the range of several micrometers with resolution of 200nm. A liquid-state monomer is solidified by two-photon absorption (TPA) induced by a femto-second laser according to a voxel matrix scanning. After polymerization, the remaining monomers were removed simply by using ethanol droplets. And then, a gold metal layer of about 30nm thickness was deposited on the fabricated master patterns prior to polydimethylsiloxane molding for preventing bonding between the master and the polydimethylsiloxane mold. A few gold particles attached on the polydimethylsiloxane stamp during detaching process were removed by a gold selecting etchant. After fabricating the polydimethylsiloxane mold, a nano-precision polydimethylsiloxane replica was reproduced. More precise replica was produced by the vacuum pressure-difference technique that is proposed in this paper. Through this study, direct patterning on a glass plate, replicating a polydimethylsiloxane mold, and reproducing polydimethylsiloxane replica are demonstrated with a vacuum pressure-difference technique for various micro/nano-applications.

Fabrication and Characterization of InGaN/GaN LED structures grown on selectively wet-etched porous GaN template layer

  • Beck, Seol;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.124-124
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    • 2010
  • Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

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