• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.8
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• pp.1107-1113
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• 2018

Ultrasonography and photodynamic therapy have been proposed as useful tools as a treatment for inducing necrosis of cells using reactive oxygen species. Apoptosis is an internal mechanism necessary for cells regardless of damage. Ultrasound has the effect of inducing the apoptosis of these cells, and the frequency of 1 MHz is the most applicable area for medical use. The laser which is generally used in photodynamic therapy has a heat reaction and the treatment is limited. However, as a small light emitting diode is developed, it shows possibility to minimize the equipment and reduce heat reaction. On the other hand, there are relatively few researches on direct effects of light compared with studies using photosensitizers, and the area is also limited. Therefore, in this paper, we have developed a cancer cell proliferation control module using ultrasonic and light emitting diodes, which have relatively few side effects, and quantitatively analyze the effect of the module to propose an optimal suppression technique.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.61-68
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• 2010

Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

• Journal of IKEEE
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• v.20 no.1
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• pp.45-53
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• 2016

This paper presents a CMOS interface circuit for vibration energy harvesting with MPPT (Maximum Power Point Tracking). In the proposed system a PMU (Power Management Unit) is employed at the output of a DC-DC boost converter to provide a regulated output with low-cost and simple architecture. In addition an MPPT controller using FOC (Fractional Open Circuit) technique is designed to harvest maximum power from vibration devices and increase efficiency of overall system. The AC signal from vibration devices is converted into a DC signal by an AC-DC converter, and then boosted through the DC-DC boost converter. The boosted signal is converted into a duty-cycled and regulated signal and delivered to loads by the PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a DC-DC boost converter architecture using a schottky diode is employed for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process, and the designed chip occupies $915{\mu}m{\times}895{\mu}m$. Simulation results shows that the maximum power efficiency of the entire system is 83.4%.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Journal of the Korean Society of Physical Medicine
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• v.9 no.2
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• pp.151-159
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• 2014

PURPOSE: The purpose of this study was to evaluate whether light-emitting diodes (LED) irradiation could be effective in a noninvasive, therapeutic device for the treatment of osteoarthritis(OA). METHODS: Twenty-four male Sprague-Dawley rats were divided into four groups: Vehicle control (saline); monosodium iodoacetate-injection (MIA); LED irradiation after MIA injection (MIA-LED); indomethacin-treatment after MIA injection (MIA-IMT). OA was induced by intra-articular injection of 3 mg MIA through the patellar ligament of the right knee. Vehicle control rats were injected with an equivalent volume of saline. The LED was irradiated for 15 min/day for a week after 7 days of MIA treatment. To compare with the effect of LED irradiation, the indomethacin was administrated 20 mg/kg twice a week orally after 7 days of MIA treatment. Knee joints were removed and fixed overnight in 10% neutral buffered formalin and decalcified by EDTA for 2 week before being embedded in paraffin. The assessment of OA induction were monitored by knee movement and radiographic finding. Histologic analysis were performed following staining with hematoxylin and eosin, safranin O-fast green, or toluidine blue, picrosirius red, and histologic changes were scored according to a modified Mankin system. Apoptotic cell in tissue sections was detected using TUNEL method. RESULTS: Radiographic examination could not show the differences between the MIA-treated and the MIA-LED-treated rats. In the histologic analysis, however, LED irradiation prevented cartilage damage and subchondral bone destruction, and significantly reduced mononuclear inflammatory cell infiltration and pannus formation. LED irradiation also reduced apoptosis of cartilage cells, but it prevented apoptosis of infiltrated inflammatory cells in synovium. In addition, LED irradiation showed an increase of collagen production in the meniscus. CONCLUSION: These results suggest that the 840 nm LED irradiation would be a suitable non-thermal phototherapy for the treatment of OA, as a cartilage protection and anti-inflammatory modality.

• Horticultural Science & Technology
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• v.31 no.1
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• pp.14-23
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• 2013

This study evaluated the influence of light quality and intensity during healing and acclimatization on the $CO_2$ exchange rate, growth, and morphogenesis of grafted pepper (Capsicum annuum L.) transplants, using a system for the continuous measurement of the $CO_2$ exchange rate. C. annuum L. 'Nokkwang' and 'Tantan' were used as scions and rootstocks, respectively. Before grafting, the transplants were grown for four weeks in a growth chamber with artificial light, where the temperature was set at $25/18^{\circ}C$ (light/dark period) and the light period was 14 hours $d^{-1}$. The grafted pepper transplants were then healed and acclimatized under different light quality conditions using fluorescent lamps (control) and red, blue, and red + blue light-emitting diodes (LEDs). All the transplants were irradiated for 12 hours per day, for six days, at a photosynthetic photon flux (PPF) of 50, 100, or 180 ${\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. The higher PPF levels increased the $CO_2$ exchange rate during the healing and acclimatization. A smaller increase in the $CO_2$ exchange rates was observed in the transplants under red LEDs. At a PPF of 180 ${\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, the $CO_2$ exchange rate of the transplants irradiated with red LEDs was lowest and it was 37% lower than those irradiated with fluorescent lamps. The $CO_2$ exchange rates of transplants irradiated with blue LEDs was the highest and 20% higher than those irradiated under fluorescent lamps. The graft take was not affected by the light quality. The grafted pepper transplants irradiated with red LEDs had a lower SPAD value, leaf dry weight, and dry matter content. The transplants irradiated with blue LEDs had longer shoot length and heavier stem fresh weight than those irradiated with the other treatments. Leaves irradiated with the red LED had the smallest leaf area and showed leaf epinasty. In addition, the palisade and spongy cells of the pepper leaves were dysplastic and exhibited hyperplasia. Grafted pepper transplants treated with red + blue LEDs showed similar growth and morphology to those transplants irradiated with fluorescent lamps. These results suggest that high-quality grafted pepper transplants can be obtained by healing and acclimatization under a combination of blue and red lights at a high PPF level.

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.11a
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• pp.0-0
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• 1998

-Part I- As market needs become more various, the production of smaller quantities of a wider variety of products becomes increasingly important. In addition, in order to meet demands for more efficient production, long-term unmanned factory operation is prevailing at a remarkable pace. Within this context, laser machines are gaining increasing popularity for use in applications such as cutting and welding metallic and ceramic materials. FANUC supplies four models of $CO_2$ laser oscillators with laser power ranging from 1.5㎾ to 6㎾ on an OEM basis to machine tool builders. However, FANUC has been requested to produce laser oscillators that allow more compact and lower-cost laser machines to be built. To meet such demands, FANUC has developed six models of Slab type YAG laser oscillators with output power ranging from 150W to 2㎾. These oscillators are designed mainly fur cutting and welding sheet metals. The oscillator has an exceptionally superior laser beam quality compared to conventional YAG laser oscillators, thus providing significantly improved machining capability. In addition, the laser beam of the oscillator can be efficiently transmitted through quartz optical fibers, enabling laser machines to be simplified and made more compact. This paper introduces the features of FANUC’s developed Slab type YAG laser oscillators and their applications. - Part II - All-solid-state lasers employing laser diodes (LD) as a source of pumping solid-state laser feature high efficiency, compactness, and high reliability. Thus, they are expected to provide a new generation of processing tools in various fields, especially in automobile and aircraft industries where great hopes are being placed on laser welding technology for steel plates and aluminum materials for which a significant growth in demand is expected. Also, in power plants, it is hoped that reliability and safety will be improved by using the laser welding technology. As in the above, the advent of high-power all-solid-state lasers may not only bring a great technological innovation to existing industry, but also create new industry. This is the background for this project, which has set its sights on the development of high-power, all-solid-state lasers with an average output of over 10㎾, an oscillation efficiency of over 20%, and a laser head volume of below 0.05㎥. FANUC Ltd. is responsible for the research and development of slab type lasers, and TOSHIBA Corp. far rod type lasers. By pumping slab type Nd: YAG crystal and by using quasi-continuous wave (QCW) type LD stacks, FANUC has already obtained an average output power of 1.7㎾, an optical conversion efficiency of 42%, and an electro-optical conversion efficiency of 16%. These conversion efficiencies are the best results the world has ever seen in the field of high-power all-solid-state lasers. TOSHIBA Corp. has also obtained an output power of 1.2㎾, an optical conversion efficiency of 30％, and an electro-optical conversion efficiency of 12%, by pumping the rod type Nd: YAG crystal by continuous wave (CW) type LD stacks. The laser power achieved by TOSHIBA Corp. is also a new world record in the field of rod type all-solid-state lasers. This report provides details of the above results and some information on future development plans.