• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

• Science of Emotion and Sensibility
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• v.9 no.4
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• pp.353-366
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• 2006

The aim of this study is to characterize the optical properties of white light-emitting diodes lighting modules and then to evaluate the sensitivity of students and teachers in reacting to the optical properties of these modules. For the sake of this study, each of 5 lighting modules was introduced to the 5 test cabinets. The 5 test cabinets were evaluated and analyzed the student and teacher's sensitivity reaction. We have selected If questions on sensitivity of the lighting and evaluated these questions with semantic differential method. To verify the reliability and objectivity of the questions, the feasibility survey was carried out by a preliminary test. As a result of the test, the sensitivities on the test cabinets were classified the 4 factors, namely, activity as the first factor, stability as the second one , potency as the third one and sensitive image as the fourth one respectively. By the evaluation of student and teacher's sensitivity on the correlated color temperature, they preferred the cabinet with the higher color temperature in view of the activity and potency. And they preferred the cabinet with the lower color temperature in view of the stability factor. In the sensitive image, they preferred the 5800K, bluish white lighting regardless of the color temperature. By the evaluation on the color rendering index, they preferred the cabinet with the higher color rendering index in view of the activity, stability and sensitive image. In the potency factor, they preferred the white lighting with the middle color rendering index.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.371-376
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• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.151-152
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• 2010

극성 [0001] 방향으로 성장 된 질화물 기반의 LEDs (light emitting diodes) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE) 에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 양자 우물구조를 GaN 의 m-plane (100) 이나 a-plane (110) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. 비극성 a-plane GaN 의 결정성과 표면 거칠기의 향상을 위해 경사각을 가지는 r-plane 사파이어를 기판으로 이용하는 연구들이 많이 진행되어 있다 [1-4]. 그러나 r-plane 사파이어 기판의 경사각과 표면의 pit 형성에 관한 상관관계의 체계적인 연구는 상대적으로 많이 진행되지 않았다. 본 연구에서는 경사각을 가진 r-plane 사파이어 기판에 유기금속화학증착법을 (MOCVD) 이용하여 a-plane GaN 을 성장하였으며, 성장 시 기판의 경사각이 a-plane GaN의 성장 거동 및 표면형상에 미치는 영향을 분석하였다. 본 실험에서는r-plane에서 m-axis방향으로 0도에서 -0.65도의 경사각을 가지는 r-plane 사파이어 기판을 이용하였다. a-plane GaN 성장에는 고온 GaN 핵 형성층을 (nucleation layer) 이용하는 2단계 성장 법이 사용되었다 [5]. -0.37도 보다 크기가 큰 경사각을 가진 r-plane 사파이어에 성장된 a-plane GaN의 표면에는 수 ${\mu}m$ 크기의 삼각형 형태의 pit이 형성되었다. 사파이어의 경사각이 -0.37도에서 -0.65도로 증가하였을 경우에, GaN의 m방향 X-ray 록킹커브 반치폭은1763 arcsec에서 1515 arcsec로 감소하였으나 표면에 삼각형 pit의 밀도는 103 cm-2 이하에서 $2{\times}106$ cm-2으로 증가하였다. 이러한 r -plane 사파이어 기판의 경사각의 차이로 표면에 pit이 발생과 결정성변화의 원인을 확인하기 위해서, 여러가지 다른 경사각을 가진 사파이어 기판의 표면에 성장된 핵 형성층의 표면 양상을 확인하였다. 발표에서는 경사각의 차이에 따른 기판 표면에서의 원자 step 구조와 GaN 의 핵 형성 간의 상관관계에 대하여 구체적으로 논의할 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.577-582
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• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.

• Korean journal of food and cookery science
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• v.31 no.4
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• pp.505-509
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• 2015

Light emitting diodes (LED) are able to selectively control the wavelength of light, enabling them to enhance photosynthesis by increasing specific wavelengths. The objectives of this study were to determine the effects of LED light exposure with various wavelengths (630 nm: 550 nm: 450 nm=8:1:1) on plant growth and bio-active compound concentrations in cherry tomato and red cabbage. With cherry tomatoes, LED decreased the number of fruits compared to fluorescent light (FL) but resulted in a significantly higher value in the total weight of the fruits and in sugar content. However, lycopene contents were not significantly different between the groups. With red cabbages, the weight and length were both significantly higher in the LED group than in the FL group. Furthermore, the anthocyanin contents in the red cabbage LED group were two times higher than those of the FL group. These results suggested that exposure to LED light with a high ratio of red wavelength can increase the anthocyanins contents in red cabbages but not the lycopene content in cherry tomatoes. Further studies will be needed to determine which LED wavelength can enhance lycopene content in cherry tomatoes.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.196-201
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• 2015

This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.

• Korean Journal of Environmental Agriculture
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• v.29 no.4
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• pp.374-380
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• 2010

This experiment was carried out to investigate the effect of light qualities and lighting types provided by LED Chamber System which designed by Rural Development Administration on growth and development of Chrysanthemum (Dendranthema grandiflorum L., cv. 'Cheonsu') plantlet cultured in vitro. The explants of single-node cuttings were exposed to monochromic or mixture radiation of blue, red, or green under continuous and intermittent lighting for 42 days. The intermittent lighting of 20 sec. on and off per minute significantly stimulated shoot elongation with lower number of internodes compared with continuous lighting treatments. However, continuous blue, red, or green light gave greater dry weight comparing the intermittent lighting, and the lowest weight was recorded at the continuous fluorescent lamp. Otherwise, the plantlet growth in dry weight or leaf area was inhibited by the green light controlled at 50 times intermittence but internode elongation was significantly increased. These results showed that the plantlets were successfully grown under the LED Chamber System controlled with different light qualities and lighting types. Quantitative growth of the plantlets was improved under the shorter photoperiod with a intermittent lighting cycle compared with continuous lighting using fluorescent lamps. It is concluded that the growth and development of in vitro plantlets such as single-node cuttings can be achieved by the controlling of light quality or lighting type during the photoperiod per day with a lower electric cost compared with conventional continuous lighting system.

• Horticultural Science & Technology
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• v.32 no.3
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• pp.330-339
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• 2014

Growth and anthocyanins of lettuce (Lactuca sativa L., 'Mid-season') grown under LED lamps with blue light in the range of 430-470 nm or with red light in the range of 630-670 nm were analyzed in this study. Cool-white fluorescent light was used a s the control. P hotosynthetic photon flux, p hotoperiod, air temperature, relative humidity, and $CO_2$ concentration in a closed plant production system were $201{\pm}2\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, 16/8 hours (day/night), $22/18^{\circ}C$, 70%, and $400{\mu}mol{\cdot}mol^{-1}$, respectively. At 21 days after light quality treatment, growth characteristics and anthocyanins content of lettuce as affected by the peak wavelength of blue or red LED were significantly different. Among peak wavelengths treated in this stusy, R1 treatment (peak wavelength 634 nm) and R6 treatment (peak wavelength 659 nm) were effective for increasing leaf width, leaf area, shoot fresh weight, and photosynthetic rate of lettuce. B5 treatment (peak wavelength 450 nm) and B4 treatment (peak wavelength 446 nm) increased the anthocyanins concentration and chlorophyll content in lettuce leaves, respectively. Anthocyanins in lettuce leaves increased linearly with decreasing hue value of leaf color and with increasing SPAD value of lettuce leaves. From these results, it was concluded that the red LED with peak wavelengths of 634 nm and 659 nm and the blue LED with peak wavelengths of 450 nm can be used as potential light spectra for increasing the yield and anthocyanins accumulation of leafy vegetable.