• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1057-1060
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• 2004

In this study, the wear characteristics of five different dental composite resins cured by conventional halogen light and LED light sources were investigated. Five different dental composite resins of Surefil, Z100, Dyract AP, Fuji II LC and Compoglass were worn against a zirconia ceramic ball using a pin-on-disk type wear tester with 15 N contact force in a reciprocal sliding motion with sliding distance of 10 mm/cycle at 1Hz under the room temperature dry condition. The wear variations of dental composite resins were linearly increased as the number of cycles increased. It was observed that the wear resistances of these specimens were in the order of Dyract AP ＆gt; Surefil ＆gt; Compoglass ＆gt; Z100 ＆gt; Fuji II LC. On the morphological observations by SEM, the large crack formation on the sliding track of Fuji II LC specimen was the greatest among all resin composites. Dyract AP showed the least wear with few surface damage. There is no significant difference in wear performance between conventional halogen light curing and light emitting diodes curing sources. It indicates that a light emitting diodes (LED) source can replace a halogen light source as a curing unit for composite resin restorations.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.9-14
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• 2005

Mode missing of Fabry-Perot laser diodes has been modeled using the time domain laser model(TDLM). Fabry-Perot laser diodes that have structure of ripple in the waveguide of active layer or defects inside the active layer were simulated. For accurate simulation, the nonlinear effects were included such as spatial hole burning(SHB) and gain saturation. From the simulation results, it was founded that the defect inside the active layer in laser diodes has a strong influence on mode missing rather than the waveguide ripple. The simulation results are confirmed with the fabricated Fabry-Perot laser diodes by measuring the longitudinal mode spectra as a function of temperature from $25[^{\circ}C]\;to\;85[^{\circ}C]$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.486-488
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• 2009

High efficiency deep blue and pure white phosphorescent organic light emitting diodes were developed using a new deep blue phosphorescent dopant, tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium (FCNIr). A high quantum efficiency of 9.1 % with a color coordinate of (0.15, 0.16) at 1,000 cd/$m^2$ was obtained in the deep blue device and a high quantum efficiency of 15.2 % with a color coordinate (0.30, 0.32) was obtained in the pure white organic light-emitting diodes. The quantum efficiency of the pure white device is the best quantum efficiency value reported in the pure white device up to now.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.38-46
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• 1993

Based on the close correlation between the optoelectronic and electrical characteristics of laser diodes, this paper is to present an exact model for electrical characteristics of laser diodes with bulk active layers so that the optoelectronic characteristics may be estimated from the electrical Characteristics. Among the considered models, the most exact model is shown to be one which uses the Fermi-Dirac integral and the bimolecular recombination and takes into account the energy-gap shrinkage with the injected carrier density.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1199-1202
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• 2007

The improvement of the electron injection is of critical importance for obtaining efficient and stable organic light-emitting diodes(OLEDs). Here, we report some of our recent results on the development of new cathode interlayer materials for OLEDs. Some of our new materials show performance superior to that of LiF.

• Journal of Information Display
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• v.9 no.2
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• pp.14-17
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• 2008

A charge trapping host structure was developed to improve the light-emitting efficiency of green phosphorescent organic light-emitting diodes. N, N'-dicarbazolyl-3,5-benzene(mCP) and a spirobifluorene based triplet host(PHl) were co-deposited as hosts in the emitting layer and the device performance was examined according to the composition mCP and PH1. The results showed that the quantum efficiency could be improved by 30 % using a mixed host of mCP and PH1.

• 전기의세계
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• v.22 no.2
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• pp.45-50
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• 1973

Amorphous semiconducting diodes from As Te Ge systm of which resitivity are 10$^{6}$ -10$^{8}$ .ohm.-cm order, are made and they exhibited several conducting states. A high conductivity, low conductivity and memory state are reported. Temperature dependency of the specimens are widerange. According to the procedure and cooling method, specimens are made easily or not. Threshold voltage of switching and memory diodes is in proportional to compositonal quantity of Arsenic. Threshold voltage is changed widely according to ambient temperature. Threshold voltage of #132 is 620V at 25.deg. C, 70V at 100.deg. C.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.97-100
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• 2005

Dynamic response of organic light-emitting diodes were analyzed in $ITO/Alq_3$(100 nm)/Al device structure with a variation of voltage an frequency. At low frequency region, complex impedance is mostly governed by resistive component, and at high frequency region by capacitive component. Also, we have evaluated resistance, capacitance and permittivity of devices.