• 한국자기학회지
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• 제19권5호
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• pp.186-190
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• 2009

본 연구에서는 수직 Bridgman 법으로 묽은 자성 반도체 Cd$_{1-x}$Mn$_x$Te 단결정을 성장시켜 Mn의 조성비 변화에 따른 자기광학적 특성과 응용성을 조사하였다. X-선 회절 실험으로부터 x < 0.82 조성에 대하여 zinc-blende 구조임을 확인하였다. 띠 간격 에너지는 온도 감소와 Mn 조성비 증가에 대하여 선형적으로 증가하였다. Faraday 회전은 광 에너지 증가 때문에 띠 간격 에너지 근처에서 증가하였고, Mn 조성비 x가 증가함에 따라 증가하였다. Cd$_{0.62}$Mn$_{0.38}$Te 결정을 이용한 광 아이솔레이트의 아이솔레이션과 삽입손실은 45와 0.35 dB이었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.327-327
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.97-97
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• 1995

• 한국진공학회지
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• 제21권5호
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• pp.258-263
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• 2012

펄스레이저 증착법으로 P형 실리콘(100) 기판위에 증착한 Fe 희석된 Si 합금의 구조와 전기적 및 자기적 물성을 연구하였다. 합금시료에 대한 X-선 회절패턴에서 육방정계에 해당하는 FeSi, $Fe_3Si$, 및 $Fe_5Si_3$와 관련된 여러 개의 회절신호가 관측되었으며, 에너지분산분광 측정에 의한 시료내 Fe 원자의 함량은 1.25~6.49 atm, %로 나타났다. 또한, 온도변화에 따른 전기비저항 값의 측정으로부터 5.21 meV와 7.79 meV 두 개의 활성화에너지를 얻을 수 있었다. 절대온도 10 K에서 측정한 최대 자화는 약 100 emu/cc로 나타났으며, 3,000 Oe의 외부자기장하에서 온도의 함수로 측정한 자화 값으로부터 시료의 강자성 특성은 350 K까지도 유지됨을 알 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.46.1-46.1
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.90-91
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• 2007

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Journal of Magnetics
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• 제12권4호
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1056-1060
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• 2005

We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.