• 대한의용생체공학회:의공학회지
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• 제29권5호
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• pp.364-370
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• 2008

Recent development in large area flat-panel x-ray detector technology enables clinical application of digital tomosyntesis. Unlike conventional motion tomography using x-ray films, flat-panel x-ray detectors provide projection images in digital formats so that tomographic images can be synthesized in a more flexible way. For the digital tomosynthesis, precise movements of the x-ray source and the x-ray detector with respect to a fulcrum point are necessary. In this study, we apply the digital tomosynthesis technique to the flat-panel detector based micro-CT in which the flat-panel detector and the x-ray source rotate together on a circular arc. The experimental results suggest that flat-panel detector based 3D CTs can be used for digital tomosynthesis in the clinical environment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.32-32
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• 2008

X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$인 $32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.427-430
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• 2003

The properties of digital X-ray detectors depend on the absorption extent of X-rays, the generated signal of each X-ray photon and the distribution of the generated signal between pixels. In digital X-ray detector with single layer, signal is generated by X-ray photon captured in photoconductor. In X-ray detector with multi structure that scintillator formed above the top of photoconductor, signal is generated both by X-ray photon captured each in scintillator and photoconductor. X-ray detector with multi structure is generated more signal than single layer detector. In this paper, we simulated absorption fraction of X-ray detector with multi-layer using Monte Carlo program. The results compared with single-layer detector to be formed scinillator or photoconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.31-34
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• 2002

In this paper, the electric properties of amophous selenium multilayer samples has been investigated. In order to develop the hybrid flat-panel digital· X-ray image detector, we measured and analyzed their performance parameters such as the X -ray sensitivity and dark-current for a amophous selenium multilayers X-ray detector with a phosphor layer, The hybrid digital X-ray image detector can be constructed by integrating a phosphor layer (or a scintillative layer) that convert X-ray to a light on a-Se photoconduction mulilayers that convert a light to electrical signal. As results, the dielectric materials such as parylene between the phosphor layer and the top electrode may reduce the dark-current of the samples. Amorphous selenium multilayers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.133-137
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• 2004

The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

• 한국통신학회논문지
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• 제32권4C호
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• pp.389-395
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• 2007

기존의 필름 X-Ray 및 CCD(Charge Coupled Device) 방식은 공간적인 제약과 진단 시간이 많이 걸리는 단점이 있다. 본 논문에서는 기존 방식들의 단점을 보완할 수 있는 TFT-DXD 방식의 digital X-ray detector (DR1000C)를 이용한 고효율 의료 영상처리시스템을 구현하였다. 본 논문에서 제안하는 DR1000C를 이용한 의료용 영상처리시스템은 기존의 X-Ray 방식에 비해 공간 효율성이 높고 진단 시간이 짧아진다는 장점이 있다. 영상처리시스템에서 획득한 영상을 고화질로 만들기 위해 1900*1200의 해상도를 가지는 LCD 컨트롤 드라이버를 개발하였고, 영상의 성능향상을 위해 enhancement unsharp masking 기법을 제안하여, 기존의 방식과 비교하였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.997-999
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• 2012

방사선 진단 목적으로 디지털 X-ray 영상 디텍터는 널리 사용 되고 있다. 비정질 셀레늄(amorphous selenium, a-Se)은 직접 방식 디텍터의 광전도체(photoconductor)를 구성하는 주요 재질 중 하나로 많은 관심을 받고 있다. 본 연구는 2차원 디바이스 시뮬레이터를 사용하여 파란색 빛을(파장=486 nm) 조사한 상태에서 고전압(High voltage, HV)을 인가하여 비정질 셀레늄 광전류 크기를 분석 하였다. 또한 비정질 셀레늄 내부의 전자-정공 생성 율, 전자-정공 재결합 율, 전자/정공의 농도 분포도에 추가로 분석한 연구 결과이다. 본 시뮬레이션 방법은 직접방식 디지털 X-ray 영상 디텍터 분석에 있어서 유용한 방법으로 향후 디지털 방사선 영상 디텍터 개발에 많이 응용될 것으로 예상된다.