• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.39-44
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• 2005

A broadband DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by newly inserted the transmission lines in conventional Switched-T attenuator and the optimization of the transmission line parameters. Momentum was employed in design for an accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify performance stability against the MMIC process variation. The attenuator has been fabricated with 0.15 $\mu$m GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic range. High attenuation accuracy has been achieved over all attenuation range and full 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies.

• ETRI Journal
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• v.30 no.5
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• pp.744-746
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• 2008

This letter presents a crosstalk-enhanced polymer thermo-optic digital optical switch operating at a low power consumption. Modified radiation-type attenuators are integrated in a series with a conventional $1{\times}2$ digital optical switch. A low optical crosstalk of less than -45 dB is attained at a low applied switching power of 60 mW, and an insertion loss of about 1.1 dB is exhibited.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.452-459
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• 2009

A 6-bit MMIC digital attenuator applicable to X-band TR module has been developed by using $0.5{\mu}m$GaAs pHEMT processes. The Switched-T attenuator scheme and the switched-path attenuator scheme were adopted to obtain low insertion loss and small phase variation, respectively. Resistors and transmission lines are optimized to achieve the digital attenuator with high attenuation accuracy and small phase variation. The digital attenuator has RMS error of 0.4dB, resolution of 0.5dB and dynamic range of 31.5dB. The measurement results show that in-out VSWRs are less than 1.5, phase variation is from -7 to +2 degrees and IIP3 is 36.5dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.101-109
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• 2006

A broadband, DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by adding transmission lines in the conventional Switched-T attenuator and optimizing the transmission line parameters. Momentum simulation was performed in design for accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify the performance stability against the MMIC process variation. The attenuator has been fabricated with $0.15\;{\mu}m$ GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic ranges. High attenuation accuracy has been achieved over all attenuation ranges and 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies. The measured IIP3 of the attenuator is 33 dBm.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.292-295
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• 2005

Variable optical attenuators (VOA) made of low-loss fluorinated polymers are demonstrated which shows a low operating power less than 30 mW due to the superior thermo-optic effect of polymer material and a low insertion loss less than 1.0 dB by incorporating highly fluorinated polymers to reduce the absorption loss at 1550 nm. An attenuator-integrated low-crosstalk polymeric digital optical switch (DOS) is also demonstrated. The switch and attenuator shares a single connected electrode which is controlled by a single current source. Due to the simple structure of the integrated attenuator, the device length is reduced to 1 cm so as to provide low insertion loss of 0.8 and 1.1 dB for 1300 and 1550 nm, respectively. The attenuator radiates remained optical signal on the switch-off branch in order to decrease the switching crosstalk to be less than -70 dB with an applied electrical power of 200 mW.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.68-75
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• 1994

A new Predistortor that is designed using Feedforward type is proposed to overcome the nonlinearity of HPA (High Power Amplifier). HPA has the nonlinearity of the gain compression and phase distorton, so digital communication system of multi-carrier TDMA needs the linear RF transmitter. Using IMD (Intermodulation Distortion) of drive amplifier, as Feedforward type, the inverse IMD is coupled to the main loop with variable attenuators, phase shifters, and sub-amplifiers well designed. At the input of main amplifier, the over-coupled IMD surpresses the main amplifier 's IMD. Adjusting the level and phase of IMD at the sub loop, C/I of HPA is better than before correction.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.5A
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• pp.543-550
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• 2011

In order to improve readability, a leakage-signal canceller has been proposed in UHF-band RFID readers. The proposed canceller is composed of two blocks: an environment monitoring block for detection of Tx and RX power levels and a leakage cancellation block. The leakage canceller consists of directional-couplers, digital attenuators and phase shifters based on the feed-forward scheme. The leakage canceller is located between antenna and reader. An improved experimental characterization of the scheme is presented with results from the reader operating in the Korean RFID frequency band, conforming the validity of the approach with more than 29 dB of leakage cancellation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2109-2116
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• 2014

This paper presents the implementation and design of the advanced WI-FI systems with beam-forming antenna that radiate their power to the direction of user equipment to improve the overall throughput, contrast to the general WI-FI systems equipped with omni-antenna. The system consists of patch array antenna, DSP, FPGA, and Qualcomm's commercial chip. The beam-forming system on the FPGA utilizes the packet information from Qualcomm's commercial chip to control the phase shifters and attenuators of the patch array antenna. The PCI express interface has been used to maximize the communication speed between DSP and FPGA. The directions of arrival of users are managed using the database, and each user is distinguished by the MAC address given from the packet information. When the system wants to transmit a packet to one user, it forms beams to the direction of arrival of the corresponding user stored in the database to maximize the throughput. Directions of arrival of users are estimated using the received preamble in the packet to make its SINR as high as possible. The proposed beam-forming system was implemented using an FPGA and Qualcommm's commercial chip together. The implemented system showed considerable throughput improvement over the existing general AP system with omni-directional antenna in the multi-user communication environment.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.