• 청정기술
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• 제7권3호
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• pp.187-194
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• 2001

석탄가스화 복합발전(IGCC)의 탈황공정에 사용되는 비아연계 탈황제 중 경제성이 우수한 천연망간광석을 이용하여 황화수소 제거반응에 대한 특성을 연구하였다. $H_2S$와 천연망간광석 탈황제 사이의 반응에 대한 초기 반응 속도를 $400{\sim}800^{\circ}C$의 온도범위에서 열중량 분석기로 실험하였다. 그 결과로 황화수소 제거반응 시 초기 반응은 1차 반응이었고, 반응속도상수는 Arrhenius 식에 잘 적용할 수 있었다. 또한 황화반응이 확산에 의해 제어되는 조건에서 농도 구배가 선형을 나타내었으며, 이를 통하여 유효 확산 계수를 온도에 따른 Arrhenius식으로 나타내었다. 이 결과를 통하여 황화 반응 시 확산에 대한 활성화 에너지와 반응 빈도 인자를 구하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1994년도 Proceedings of the Korea Automatic Control Conference, 9th (KACC) ; Taejeon, Korea; 17-20 Oct. 1994
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• pp.207-212
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• 1994

A mathematical model is developed for a batch reactor in which the free radical bulk copolymerization of styrene and acrylonitrile takes place. In this model, we introduce the free volume theory to quantify the diffusion controlled termination and propagation reactions, and develop a model for the chain length dependent termination reaction in the context of the pseudo kinetic rate constant method(PKRCM). The simulation results from this model are found to be in good agreement with experimental data under different copolymerization conditions. The present model can predict both the copolymer composition and the number and weight average molecular weights. These kinetic approaches provide greater insight into the performance of the batch reactor used for the free radical bulk copolymerization of styrene and acrylonitirle.

• Bulletin of the Korean Chemical Society
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• 제10권6호
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• pp.529-535
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• 1989

A general perturbation series solution of the Smoluchowski equation is applied to investigate the rate of recombination and the remaining probability of a pair of particles in liquids. The radiative boundary condition is employed and the convergence of the perturbation series is analyzed in terms of a convergene factor in time domain. The upper bound to the error introduced by the n-th order perturbation scheme is also evaluated. The long time behaviors of the rate of recombination and the remaining probability are found to be expressed in closed forms if the perturbation series is convergent. A new and efficient method of purely numerical integration of the Smoluchowski equation is proposed and its results are compared with those obtained by the perturbation method. For the two cases where the interaction between the particles is given by (i) the Coulomb potential and (ii) the shielded Coulomb potential, the agreement between the two results is found to be excellent.

• Bulletin of the Korean Chemical Society
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• 제12권6호
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• pp.686-691
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• 1991

Emission quenching of photoexcited tris(${\alpha},{\alpha} '$-diimine)-ruthenium(II) complex cations, $RuL_3^{2+}$ (L: 2,2'-bipyridine, 4,4'-dimethyl-2,2'-bipyridine; 4,4'-diphenyl-2,2'-bipyridine; 1,10-phenanthroline; 5-methyl-1,10-phenanthroline; 5,6-dimethyl-1,10-phenanthroline or 4,7-diphenyl-1,10-phenanthroline) by $Cu^{2+}$, dimethylviologen $(MV^{2+})$, nitrobenzene (NB), and oxygen was studied in aqueous homogeneous and sodium dodecyl sulfate (SDS) micellar solutions. The apparent bimolecular quenching rate constants $k_q$ were determined from the quenching data and life-times of $^{\ast}RuL_3^{2+}$. In homogeneous media, the quenching rate was considerably slower than that for the diffusion-controlled reaction. The decreasing order of quenching activity of quenchers was $NB>O_2>MV^{2+}>Cu^{2+}$. The rate with $Cu^{2+}$ was faster as the reducing power of $^{\ast}RuL_3^{2+}$ is greater. On the other hand, the rates with NB and $O_2$ were faster as the ligand is more hydrophobic. This was attributed to the stabilization of encounter pair by van der Waals force. The presence of SDS enhanced the rate of quenching reactions with $Cu^{2+}$ and $MV^{2+}$, whereas it attenuated the quenching activity of NB and $O_2$ toward $RuL_3^{2+}$. The binding affinity of quenchers to SDS micelle and binding sites of the quenchers and $RuL_3^{2+}$ in micelle appear to be important factors controlling the micellar effect on the quenching reactions.

• 한국세라믹학회지
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• 제24권5호
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• pp.453-460
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• 1987

β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)＋C(s)＋N2(g)→β2-sialon(metastable)＋β3-sialon(stalbe phase) β2-sialon(s)＋C(s)＋N2(g)→β3-sialon(s)＋AlN(s)＋α-Al2O3(s)＋15R(s)＋SiO(g)＋Al2O(g)＋CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• 분석과학
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• 제6권1호
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• pp.83-92
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• 1993

0.05M TEAP를 지지전해질로 한 아세톤용액에서, 란탄늄 및 네오디늄과 몇 가지 리간드의 착물에 대한 전기화학적 거동인 환원전류의 유형, 가역성, 안정도상수, 전류함수 등을 폴라로그래피와 순환전압전류법으로 조사하였다. 환원파는 2단계로 나타났으며, 반응은 확산지배적이고 비가역적이었다. 또한 란탄족 금속이온의 착물에 대하여 안정도상수를 측정하였다.

• 한국산업보건학회지
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• 제22권1호
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• pp.52-59
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• 2012

Objectives: The purpose of this study was to evaluate the exposure possibility of by-products during the semiconductor manufacturing processes. Methods: The authors investigated types of chemicals generated during semiconductor manufacturing processes by the qualitative experiment on generation of by-products at the laboratory and a literature survey. Results: By-products due to decomposition of photoresist by UV-light during the photo-lithography process, ionization of arsine during the ion implant process, and inter-reactions of chemicals used at diffusion and deposition processes can be generated in wafer fabrication line. Volatile organic compounds (VOCs) such as benzene and formaldehyde can be generated during the mold process due to decomposition of epoxy molding compound and mold cleaner in semiconductor chip assembly line. Conclusions: Various types of by-products can be generated during the semiconductor manufacturing processes. Therefore, by-products carcinogen such as benzene, formaldehyde, and arsenic as well as chemical substances used during the semiconductor manufacturing processes should be controlled carefully.

• Environmental Engineering Research
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• 제23권4호
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• pp.345-353
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• 2018

This paper summarizes results of research on the electrochemical (EC) degradation of disinfection by-products (DBPs) and iodine-containing contrast media (ICMs), with the focus on EC reductive dehalogenation. The efficiency of EC dehalogenation of DBPs increases with the number of halogen atoms in an individual DBP species. EC reductive cleavage of bromine from parent DBPs is faster than that of chlorine. EC data and quantum chemical modeling indicate that the EC reduction of iodine-containing DBPs (I-DBPs) is characterized by the formation of active iodine that reacts with the organic substrate. The occurrence of ICMs has attracted attention due to their association with the generation of I-DBPs. Indirect EC oxidation of ICMs using anodes that produce reactive oxygen species can result in a complete degradation of these compounds yet I-DBPs are formed in the process. Reductive EC deiodination of ICMs is rapid and its overall rate is diffusion-controlled yet I-DBPs are also produced in this reaction. Further progress in practically feasible EC methods to remove DBPs, ICMs and other trace-level organic contaminants requires the development of novel electrocatalytic materials, elimination of mass transfer limitations via innovative design of 3D electrodes and EC reactors, and further progress in the understanding of intrinsic mechanisms of EC reactions of DBPs and TrOC at EC interfaces.

• 한국수산과학회지
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• 제14권2호
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• pp.94-102
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• 1981

해수에서 전기 전도성이 있는 산화 피막전극을 사용하여 금속 산화피막 전극들의 특성과 발암성 원인물질인 DBNA의 전극 반응성을 규명하는데 필요한 기초자료를 potential drop방법과 galvanostatic방법으로 얻어서 다음과 같은 결론을 내렸다. 1) $9\%_{\circ}$해수에 음극반응 억제제 DBNA를 첨가한 경우 알루미늄 산화피막 전극과 아연 산하피막 전극은potential drop현상을 나타내지 못 했으나 납 산화피막 전극과 구리 신화피막 전극은 피막전극으로서 적합한 기능을 가졌음을 알았다. 2) 제1단계 음극반응의 transition time이 $0.22\sim1.40sec$범위의 1분이내 값이므로 산화피막을 통과한 양성자는 확산$\rightarrow$흡착과정의 음극반응을 했다. 3) 0.5M NaCl수용액과 $9\%_{\circ}$해수에서 얻어진 transition time 값들이 대체로 일치한 것은 금속의 종류에 관계없이 산화피막을 통과한 양성자의 확산속도가 인정전류밀도 범위에서 인정하였기 때문이다. 4) $1.9\times10^{-4}\sim5.0\times10^{-6}\;amp/cm^2$의 전류밀도 범위에서 해수와 해수에 억제제 DBNA를 첨가했을때 얻어진 $\tau_{1}/4$값들의 $E_{1}/4$값들의 차가 각각 0.06sec와 0.53v있으므로, 억제 DBNA의 음극반응은 주로 흡착$\rightarrow$확산과정 이었다. 5) 알루미늄 산화피막과 아연 산화피막의 표면에 흡착된 전재질의 흡착량이 납 산화피막과 구리 산화피막보다 많은 것은 피막표면에 생성된 불규칙한 기공 생성 수가 증가하였기 때문이다.