• Journal of the Korean Society of Costume
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• v.51 no.2
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• pp.193-203
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• 2001

The hip-length jacket(유) worn by the Korean from the ancient times is tole prototype of the contemporary jacket. Hip-length jacket was transferred to Japan and worn by all the people beyond the class. From 12C, the King and the high class people wore the clothing influenced by Tang(唐) country but the common people continuously wore the hip-length jacket. Currently the hip-length jacket is worn by the merchant and is used as the clothing of the celebration. The hip-length jacket has not been much changed in terms of the form.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.59-62
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• 2014

Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

• Journal of Environmental Health Sciences
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• v.35 no.6
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• pp.500-509
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• 2009

Passive samplers have been used for many years for the sampling of organic vapors in work environment atmospheres. Currently, all passive samplers used in domestic occupational monitoring are foreign products. This study was performed to evaluate variable parameters for the development of passive organic samplers, which include the geometry of the device and diffusive length for the sampler design. Four prototype diffusive lengths; A-1(4.5 mm), A-2(7.0 mm), A-3(9.5 mm), A-4(12.0 mm) were tested for adsorption performances to a chemical mixture (benzene, toluene, trichloroethylene, and n-hexane) according to the US-OSHA's evaluation protocol. A dynamic vapor exposure chamber developed and verified by related research was used for this study. The results of study are as follows. The results in terms of sampling rate and recommended sampling time test indicate that the most suitable model was A-3 (9.5 mm diffusive lengths on both sides) for passive sampler design in time weighted average (TWA) assessment. Sampling rates of this A-3 model were 45.8, 41.5, 41.4, and 40.3 ml/min for benzene, toluene, trichloroethylene, and n-hexane, respectively. The A-3 models were tested on reverse diffusion and conditions of low humidity air (35% RH) and low concentrations (0.2 times of TLV). These conditions had no affect on the diffusion capacity of samplers. In conclusion, the most suitable design parameters of passive sampler are: 1) Geometry and structure - 25 mm diameter and 490 $mm^2$ cross sectional area of diffusion face with cylindrical form of two-sided opposite diffusion direction; 2) Diffusive length - 9.5 mm in both faces; 3) Amount of adsorbent - 300 mg of coconut shell charcoal; 4) Wind screen - using nylon net filters (11 ${\mu}m$ pore size).

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• The Korean Journal of Pharmacology
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• v.29 no.1
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• pp.157-163
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• 1993

Intramolecular excimer formation with the fluorescent probe 1,3-di(1-pyrenyl)propane (Py-3-Py) was used to investigate the effects of methanol, ethanol, 1-propanol, 1-butanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 1-nonanol and 1-decanol on the lateral diffusion of synaptosomal plasma membrane vesicles isolated from bovine cerebral cortex (SPMV). The n-alkanols increased the excimer to monomer fluorescence intensity ratio (I'/I) of Py-3-Py in the SPMV. In a dose-dependent manner, n-alkanols increased lateral diffusion of hydrocarbon region of bulk (inner+outer monolayers) SPMV lipid bilayers, and the potencies of n-alkanols up to l-nonanol increased with carbon chain length. It appears that the potencies in bilayer fluidization due to the lateral diffusion increase by 1 order of magnitude as the carbon chain length increases by two carbon atoms. The cut-off phenomenon was reached at 1-decanol, where further increase in hydrocarbon length resulted in a decrease in pharmacological activity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.334-338
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• 1999

Porous silicon layers were fabricated with various conditions of HF concentration and current density. And their masses were measured. From these data, the porosity and fractal dimension were estimated and analyzed. We found that the porosity was proportional to the current density when the anodic reaction time was fixed and the constant values of fractal dimension could be estimated from a series of data with fixed HF concentration. The values of fractal dimension were decreased with increasing HF concentration. The obtained porosity and fractal dimension were compared with the 2-dimensional computer simulation based on diffusion limited deposition model. According to the simulation, the porosity was proportional to the diffusion length and the fractal dimension was inversely proportional to the diffusion length. Since, the diffusion length is proportional to current density and inversely proportional to base concentration, our experimental data qualitatively agreed with the results from the simulation. The porosity obtained by experiments, however, was not consistent with the results by simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.553-556
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• 1999

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.625-628
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• 1991

Using uniform flat plate-like samples of ZSM-5 zeolites, diffusion coefficients were measured volumetrically for the diffusion of xylene, ethyltoluene and diethylbenzene by direct measurement of sorption rate. Toluene disproportionation over H(100)-, K(72)-and Cs(82)-ZSM-5 at 773 K and toluene methylation, toluene ethylation and ethylbenzene ethylation over Cs(75)-ZSM-5 at 623 K were carried out. The selective formation of para xylene during the toluene disproportionation, presumably due to the increased tortuosity over Cs-ZSM-5, could be explained by smaller diffusion coefficient in Cs-ZSM-5 than in K-and H-ZSM-5. The para selectivity increased in the order; toluene methylation < toluene ethylation < ethylbenzene ethylation. As the chain length of the alkyl substituent in dialkylbenzenes is increased, the para selectivity of the products was improved. It may be attributed to the differences in the ratios of diffusion coefficient of para products to that of ortho ones. Diffusion coefficient of m-xylene was about 1 order of magnitude smaller than that of o-xylene.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.4
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• pp.264-271
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• 2009

Characteristics of a counter flowing diffusion flame, which is formulated by an oppositely-injected methane-jet flow in a narrow channel of a uniform air flow. The location of the flame fronts and the flame lengths were compared by changing the flow rates of fuel. To distinguish the effects of the narrow channel on the diffusion flame, a numerical simulation for an ideal two-dimensional flame was conducted. Overall trends of the flame behavior were similar in both numerical and experimental results. With the increase of the ratio of jet velocity to air velocity flame front moved farther upstream. It is thought that the flow re-direction in the channel suppresses fuel momentum more significantly due to the higher temperature and increased viscosity of burned gas. Actual flames in a narrow channel suffer heat loss to the ambient and it has finite length of diffusion flame in contrast to the numerical results of infinite flame length. Thus a convective heat loss was additionally employed in numerical simulation and closer results were obtained. These results can be used as basic data in development of a small combustor of a nonpremixed flame.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.