• Journal of the Korean institute of surface engineering
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• v.29 no.4
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• pp.278-285
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• 1996

The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Journal of Welding and Joining
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• v.13 no.4
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• pp.147-154
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• 1995

In order to study the bonding mechanism of Ni/B/Ni transient liquid phase bonding system, width of liquid layers were calculated, where in this system melting point of insert material(B) is higher than bonding temperature and melting point of base metal(Ni). Caclulated values were compared with experimental ones which were measured by bonding Ni/B/Ni system at 1433-1474K under vacuum atmosphere. As results, the width of initial liquid layer of Ni/B/Ni system was calculated as $W_{IL}$ = $W_{o}$[1 + {2.100..rho.$_{S/}$ ( $X_{3}$ + $X_{4}$)..rho.$_{Ni}$ }-.rho.$_{S/}$.rho. Ni/], and it was nearly same with experimental values. Maximum width of liquid layer, width of liquid layer during isothermal solidification and isothermal solidification time were calculated also.o.o.o.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.5
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• pp.712-720
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• 1998

The effect of H2:N2 gas ratio on the case thickness hardness and nitrides formation in the sur-face of SCM440 machine structural steel have been studied by micro-pulse plasma process. The thickness of compound layer increased with the increase of nitrogen content in the gas com-position. The maximum thickness of compound layer the maximum case depth and the maximum surface hardness were about 15.8${\mu}m$, 400${\mu}m$ and Hv765 respectively in the nitriding condition of 250Pa and 70% nitrogen content at $520^{\circ}C$ for 7hrs. Generally only nitride phases such as ${\'{\gamma}}$($Fe_4N$)$\varepsilon(Fe_2}{_3N}$ phases were detected in compound and diffusion layer by XRD analysis. The amount of $\varepsilon(Fe_2}{_3N}$ phase increased with the increase of nitrogen content. The relative amounts and kind of phases formed in the nitrided case changed with the change of nitrogen content in the gas composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of Powder Materials
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• v.4 no.3
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.39-45
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• 2013

The water management is one of the key issues in low operating temperature proton exchange membrane fuel cells (PEMFCs). The gas diffusion layer (GDL) allows the reactant gases flow to the reaction sites of the catalyst layer (CL). At high current density, generated water forms droplets because the normal operating temperature is $60{\sim}80^{\circ}C$. If liquid water is not evacuated properly, the pores in the GDL will be blocked and the performance will be reduced severely. In this study, the microchannel GDL was proposed to solve the flooding problem. The liquid water transport through 3-D constructed conventional GDL and microchannel GDL was analyzed varying air velocity, water velocity, and contact angle. The simulation results showed that the liquid water was evacuated rapidly through the microchannel GDL because of the lower flow resistance. Therefore, the microchannel GDL was efficient to remove liquid water in the GDL and gas channels.

• Journal of the Korean institute of surface engineering
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• v.31 no.1
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• pp.54-62
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• 1998

In this study, the behaviorof ion nitriding of AISI 304 stainless steel was investigated using plasma ion nitriding system. The characteristics of ion nitriding, and their micsoctrucyures, and physical properties were investigated as a function of process parmeteds. important conclusions can be summarzied as follows. Firstly, it was found that growth of nitride layer in ion nitriding are mainly affected by N2 partial pressures and nitriding temperatures for AISI 304 stainless steel. The $N_2$<\TEX> partial pressure plays on important role in ion nitriding since it determiness the incoming flux of nitrogen species onto specimen surface. Nitriding thmprrature is also important besauseit determines the diffusion rates of nitrogen through nitride layers. While both parameters affects the characteristics rateding are controlled by nitridingen diffusion nitration profiles of N and alloying elements such as Cr and Ni are observed through niride layers. Secondly, nitride layer consists of the upper white laywe having various nitride phases and the underneath diffusion layers. The thickness of white layer increases with $N_2$<\TEX> partial pressures and nitriding temperatures. The thinkness of diffusion layer is increasting nitriding temperatures. Finally, nitriding of stainless steels steel show slighly low their corrsionce prorerties. However, passivation properties, which is normally observed in stainless steels, were still observed aftre ion nitriding.