• Asian Journal of Innovation and Policy
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• 제8권1호
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• pp.1-30
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• 2019

The advent of digitalisation has transformed economies into more integrated, but increasingly complex systems. This new trend has brought dynamic changes in the manufacturing sector through advanced ICT infrastructure, smart factories, digitally-controlled logistics, and skilled ICT-labour. The impacts of the digital economy on manufacturing could be best illustrated through "Industry 4.0." With this wave of technological advancement, countries aim to establish an industrial ecosystem where every manufacturing process and function is connected and interacts through digital networks. Industry 4.0 presents opportunities for Emerging Asia, as the region has emerged as a fast-growing manufacturing hub and particularly a production base for ICT goods. However, growing production capacity, increased exports, and increases in FDI in the field of ICT goods manufacturing have so far contributed little to the development and diffusion of ICT. A huge gap exists in the ICT uptake amongst countries and between small and large firms. This paper highlights the level of Industry 4.0 readiness of Emerging Asia and key factors that determine its enhancement.

• 한국재료학회지
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• 제26권1호
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• 공업화학
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• 제31권2호
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• pp.208-214
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• 2020

본 연구에서는 식물세포 Taxus chinensis로부터 수분 제거를 통한 바이오매스 보관 및 추출 효율 향상을 위하여, 마이크로웨이브를 이용한 건조의 특성 및 메커니즘을 조사하였다. 마이크로웨이브 파워가 100, 200, 300 W로 증가함에 따라 수분의 제거 효율은 증가하였다. 실험 데이터를 대표적 동역학적 건조 모델에 적용할 때, Page 모델과 modified Page 모델이 가장 적합한 것으로 결정되었다. 열역학적 파라미터는 마이크로웨이브를 이용한 건조의 자발적 및 흡열특성을 나타내었으며, 건조 과정에서 무질서도는 증가함을 알 수 있었다. 마이크로웨이브 파워(100~300 W)가 증가함에 따라 수분의 유효확산계수(3.445 × 10^-9~7.163 × 10^-7 ㎡/s) 및 대류물질전달계수(3.1529 × 10^-5~1.2895 × 10^-2 m/s)가 증가하였다. 작은 비오트 수(0.3890~0.7198)를 고려할 때, Taxus chinensis의 건조 진행은 외부 확산에 의해 조절됨을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.106-113
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• 2024

Understanding the tritium release and retention behavior of candidate tritium breeder materials is crucial for breeder blanket design. Recently, a melt spraying process was developed to prepare Li₄SiO₄ pebbles, which were subsequently subjected to the in-pile tritium production and extraction platform in China Mianyang Research Reactor (CMRR) to investigate their in-situ tritium release behavior and irradiation performance. The results demonstrate that HT is the main tritium release form, and adding hydrogen to the purge gas reduces tritium retention while increasing the HT percent in the purge gas. Post-irradiation experiments reveal that the irradiated pebbles darken in color and their grains swell, but the mechanical properties remain largely unchanged. It is concluded that the tritium residence time of Li₄SiO₄ made by melt spraying method at 467 ℃ is approximately 23.34 h. High-density Li₄SiO₄ pebbles exhibit tritium release at relatively low temperatures (<600 ℃) that is mainly controlled by bulk diffusion. The diffusion coefficient at 525 ℃ and 550 ℃ is 1.19 × 10^-11 cm²/s and 5.34 × 10^-11 cm²/s, respectively, with corresponding tritium residence times of 21.3 hours and 4.7 hours.

• 공업화학
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• 제8권4호
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• pp.645-652
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• 1997

백금 회전전극을 이용하여 확산지배영역에서의 구리 착화합물의 환원에 대한 전기화학적 특성조사 및 이에 대한 속도인자들을 구하였다. 황산염 용액내에서 Cu(II)의 환원은 2전자, 1단계 반응이며, 염화물 용액내에서의 Cu(II)는 1전자, 2단계 반응으로 환원된다. 환원반응에서의 전달계수는 황산염 용액내에서 Cu(II)가 가장 작으며, 할로겐염 중에서 Cu(I)의 전달계수는 1에 가까운 값을 나타내었다. 염화물 용액안에서 구리이온의 환원에 대한 표준속도상수는 Cu(II)의 환원이 Cu(I)을 출발물질로 할 경우보다 100배 정도 빠른 값을 나타내었다. 그리고 확산계수는 $Cl^-$존재시의 Cu(II), $I^-$, $Br^-$, $Cl^-$존재시의 Cu(I) 및 $SO_4^{-2}$존재시의 Cu(II)의 순으로 증가하였으며, 각 용액 내에서의 구리이온의 반지름 및 확산에 대한 활성화 에너지도 위의 순서와 동일하게 감소하였다. 회전전극상의 구리전착의 경우 전착전위 및 농도에 따라 불균일한 전착표면을 형성하였으며, 이러한 전착표면의 불균일성은 UV/VIS로 분석이 가능하였다.

• 공업화학
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• 제8권3호
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• pp.395-402
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• 1997

ECR 산소 플라즈마를 사용한 건식산화법에 의해 두 가지 실리콘 배향에 대하여 실리콘 산화막을 제조한 후 Deal-Grove(D-G)모델과 Wolters-Zegers-van Duynhoven (W-Z)모델에 적용하여 시간에 따르는 막 두께의 변화를 살펴보았으며 산화속도와 산화막의 표면 morphology의 상관관계를 조사하였다. 실리콘 산화막의 두께는 Si(100)과 Si(111) 모두 반응 시간이 짧은 영역에서 선형적으로 증가하였으나 반응시간이 경과함에 따라 화학반응 속도 보다 산화막을 통과하는 반응성 라디칼들의 확산이 율속단계로 작용하여 산화속도의 증가폭이 다소 둔화되었다. D-G모델과 W-Z모델에서 확산 및 반응속도는 Si(100)보다 Si(111)이 더 큰 값을 갖기 때문에 반응속도는 1.13배 더 크게 나타났으며 이들 모델은 실험 값과 잘 일치하였다. 표면 morphology는 산화 속도가 증가해도 식각현상이 일어나지 않는 실험 조건에서 산화막의 표면 조도가 일정하였으며, 기판의 위치가 하단 전자석에 근접하고 마이크로파 출력이 증가하여 식각현상이 일어나는 실험 조건에서 표면 조도는 산화속도와 관계없이 크게 나타났다.

• 한국분말재료학회지
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• 제16권1호
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• pp.9-15
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• 2009

Amorphization and crystallization behaviors of $Ti_{50}Cu_{50}Ni_{20}Al_{10}$ powders during high-energy ball milling and subsequent heat treatment were studied. Full amorphization obtained after milling for 30 h was confirmed by X-ray diffraction and transmission electron microscope. The morphology of powders prepared using different milling times was observed by field-emission scanning electron microscope. The powders developed a fine, layered, homogeneous structure with prolonged milling. The crystallization behavior showed that the glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 691,771 and 80 K, respectively. The isothermal transformation kinetics was analyzed by the John-Mehn-Avrami equation. The Avrami exponent was close to 2.5, which corresponds to the transformation process with a diffusion-controlled type at nearly constant nucleation rate. The activation energy of crystallization for the alloy in the isothermal annealing process calculated using an Arrhenius plot was 345 kJ/mol.

• 한국결정성장학회지
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• 제11권3호
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• pp.127-131
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• 2001

산화물계의 액상소결시 액상량을 변수로 하여 입자형성이 입자성장 거동에 미치는 영향을 고찰하였다. 산화물계 모델로 구형입자의 경우는 MgO$CaMgSiO_{4}$계를 선택하였으며, 각진입자의 경우는 $Al_{2}O_{3}$/ $CaAl_{2}Si_{2}O_{8}$계를 선택하였다. 구형입자인 MgO의 경우 액상량 증가에 따라 입자크기가 감소하였으나,각진입자인 $Al_{2}O_{3}$ 입자의 경우는 계면지배과정에 의해 성장하는 반면, 거친 고상/액상계면을 지닐 것으로 예상되는 구형 MgO입자의 경우는 확산지배과정에 의해 성장하였다.

• Korean Chemical Engineering Research
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• 제53권4호
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• pp.509-516
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• 2015

We investigated the reduction leaching process of manganese dioxide ore using black locust as reductant in sulfuric acid solution. The effect of parameters on the leaching efficiency of manganese was the primary focus. Experimental results indicate that manganese leaching efficiency of 97.57% was achieved under the optimal conditions: weight ratio of black locust to manganese dioxide ore (WT) of 4:10, ore particle size of $63{\mu}m$, $1.7mol{\cdot}L^{-1}\;H_2SO_4$, liquid to solid ratio (L/S) of 5:1, leaching time of 8 h, leaching temperature of 368 K and agitation rate of $400r{\cdot}min^{-1}$. The leaching rate of manganese, based on the shrinking core model, was found to be controlled by inner diffusion through the ash/inert layer composed of associated minerals. The activation energy of reductive leaching is $17.81kJ{\cdot}mol^{-1}$. To conclude the reaction mechanism, XRD analysis of leached ore residue indicates manganese compounds disappear; FTIR characterization of leached residue of black locust sawdust shows hemicellulose and cellulose disappear after the leaching process.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.