• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.87-90
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• 1999

The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.

• Korean Journal of Optics and Photonics
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• v.3 no.3
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• pp.148-154
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• 1992

With nonhardening fixer, dichromated bleacher and alcohol drying, the diffraction efficiency of over 71o/c has been achie'{ed for holographic phase gratings in silver halide emulsion. The swollen emulsion of Agfa 8E75 HD film is identified by scanning electron microscope (SEM) after chemical processing. Dichromated bleacher and rapid dehydration using alcohol drying make a strong modulation so that diffraction efficiency is. increased over 20%. The principal characteristic parameters in coupled wave theory are investigated and new modified parameter values are presented by computer simulation. Controlling the emulsion thickness has an important role as a potential source for high diffraction efficiency.ciency.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.121-127
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• 2005

This paper presents the thermal characteristics of a Bragg grating recorded in photopolymer. We record hologram gratings using a 532 nm Nd : YAG laser in DuPont HRF 150-38 photopolymer films and analyze the diffraction efficiency versus thermal exposure conditions. For the case of recording after heating, the diffraction efficiency of the hologram is more than $70\%$ at $100^{\circ}C$ but is decreased exponentially at temperatures over $100^{\circ}C$. It is observed in the recording before heating that the diffraction efficiency of the hologram fixed by a UV light is increased to approximately $10\%$ at $100^{\circ}C$, but the holograms are erased at temperatures over $120^{\circ}C$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.287-288
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.417-418
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.5
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• pp.123-128
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• 2022

Applying rigorous modal transmission-line theory (MTLT), the properties of resonant diffraction gratings under conical light incidence is investigated. The mode vectors pertinent to resonant diffraction under conical mounting vary less with incident angle than those associated with diffraction gratings in classical mounting. Furthermore, as the evanescent diffracted waves drive the leaky modes responsible for the resonance effects, the conical mounting imbues diffraction gratings with larger angular tolerance than their classical counterparts. Based on these concepts, the angular-spectral and wavelength-spectral performance of resonant diffraction gratings in conical and classical mounts by numerical calculations with spectra found for conical incidence are quantified. These results will be useful in various applications demanding resonant diffraction gratings that are efficient and physically sparse.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.2
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• pp.129-134
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• 2022

The resonant bio-sensor of bi-level grating structure with mushroom profile has been designed for operating in the near-infrared (NIR) wavelength range under transverse electric (TE) polarization. The rigorous modal transmission-line theory (MTLT) is applied to determine the optical characteristics, and the reflection resonance of the grating structure is analyzed by varying their geometrical parameters. The numerical result shows that an excited sharp Fano resonance (FR), which does not occur in single layer grating, is demonstrated. The relationship between structure parameters of bi-level grating and the reflectance spectrum in order to guarantee the appearance of FR in the designed structure is fully investigated. An optical bio-sensor with a potential sensitivity of 112.9~214.3 deg/RIU and 447 nm/RIU is designed based on the proposed structure. The proposed mushroom profile may serve as a powerful sample for the design of optical bio-sensors with a wide range of applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.132-141
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• 1996

The pixelated phase grating has been studied as a kind of diffraction gratings splitting and input beam into multiple spots. It consists of regular size cells which produce phase delays, and each cell provokes the phase delay up to sixteen levels. We have compared and analyzed the characteristics of multi-level phase gratings, laying streess on efficiency and resulted pattern. Experimental resutls obtained form fabricated grating have been presented, and the real-time method using a liquid-crystal spatial light modulator has been demonstrated through experiments. Gratings making meams with specific intensities have been designed and optical images have been generated by them. In order to specific intensities have been designed and optical images have been genrated by them. In order to decide the phase delay of each cell, optimization conditon consists of diffraction efficiency and target values. One period of phase gratings fabricated with surface relief was less than 256${\mu}m{\times}256{\mu}m$ and size of each cell was 1${\mu}m{\times}1{\mu}m$ surface relief grating has been made by coating photoresist on the glass plate, writing information pattern by Ar laser and developing it. in the experiment for real-tiem processing liquid-crystal display of epson video projector has been used.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.