• 전기학회논문지
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• 제59권12호
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• pp.2250-2255
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• 2010

An fine silver particle has a variety of uses, such as in killing micrograms and as catalysts. Many techniques have been used for the production of the fine particles. Faraday cell, consisting of two silver electrodes in an electrolyte, is unique, but it is hard to get a very fine particle by this method. A finer silver nano-particle producing cell, utilizing a dielectric bed as a lower electric current and higher field controlling means, has been proposed and investigated. The I-V characteristics of the cell and effect of the dielectric bed on the producing finer silver nano-particles have been investigated. The I-V characteristics of the cell with the dielectric bed were different from that of the same system without the bed, due to the increased cell resistance and elevated electric field intensity. It is found that the proposed cell with the dielectric bed can produce finer silver nano-particles effectively, which, however, can be used as one of effective fine silver nano-particle producing means.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Macromolecular Research
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• 제15권2호
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• pp.114-128
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• 2007

Polyimides are one of the most important classes of polymers used in the microelectronics and photoelectronics industries. Because of their high thermal stability, chemical resistance, and good mechanical and electric properties, polyimides are often applied in photoresists, passivation and dielectric films, soft print circuit boards, and alignment films within displays. Recently, fully aliphatic and alicyclic polyimides have found applications as optoelectronics and inter layer dielectric materials, due to their good transparencies and low dielectric constants $(\varepsilon)$. The low molecular density, polarity and rare probability of forming inter- or intra-molecular charge transfers, resulting in lowering of the dielectric constant and high transparency, are the most striking characteristics of aliphatic polyimide. However, the ultimate end use of polyimides derived from aliphatic monomers is in their targeted applications that need less stringent thermal requirements. Much research effort has been exerted in the development of aliphatic polyimide with increased thermal and mechanical stabilities, while maintaining their transparencies and low dielectric constants, by the incorporation of rigid moieties. In this article, the recent research process in synthesizing fully aliphatic polyimides, with improved dimensional stability, high transparency and low $\delta$values, as well as the characterizations and future scope for their application in micro electric and photo-electronic industries, is reviewed.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.382-385
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• 1995

Electrical properties such as tracking resistance, dielectric constant, $tan\delta$, and volume resistivity, and mechanical properties such as tensile, and strength, and % elongation were measured with the alumina trihydrate filled with EPDM. The results were dicussed in terms of the effect of hydroxyl group. The test results show that the tracking resistance of EPDM improves with the increase in ATH content, whereas volume resistivity, dielectric constant, $tan\delta$ decrease wi th increasing ATH content due to polar nature of ATH. In the charge accumulation characteristics, the homocharge is formed in pure EPDM, and as the ATH content increases in the EPDM compound, the amount of homocharge decrease.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1481-1483
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• 2003

Molecular motions of polyaniline conducting blends were prepared. Surface resistance of its blends was investigated by a Surface Resistance Meter. DC electrical properties were investigated by Thermally Stimulated Currents(TSC) method and AC dielectric properties were investigated by Dielectric Thermal Analyzer (DETA) in the temperature range from $-50^{\circ}C$ to $120^{\circ}C$ at 1E0 Hz $^{\sim}$ 1E7 Hz for a comparative study of molecular relaxation. Using Scanning Electron Microscopy(SEM), relations of both microstructure and conduction behaviors was observed.

• 한국군사과학기술학회지
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• 제13권5호
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• pp.869-874
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• 2010

A research for the optimal design of microwave absorbing material featuring for the broadband has been conducted to apply to warship. A multilayered structure was suggested using wave absorbing layers and resistance layer to perform high performance in broadband frequencies. For the optimization of the wave absorbing characteristics, the thickness and permittivities of the absorbing layers as well as the surface resistance of the resistant layer were determined using genetic algorithm. The data base of permittivities related to the density of the dielectric materials and loss materials was obtained by the experiments for the dielectric constants of the absorbing layers, furthermore, the results were numerically expressed and used for the optimization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.73-78
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• 1991

In this study of stacked type film chip capacitor, the important parameters are heat-treated temperature, pressure and time. We measured the temperature dependence of dielectric properties and dissipation factor and the frequency dependence of dielectric properties, dissipation factor, ESR(Equivalent Series Resistance) and impedance in stacked type film capacitor. As a result, the best conditions of heat-treated temperature, pressure and time were proved to be 130$^{\circ}C$, 10kg/$\textrm{cm}^2$ and 3hrs, respectively.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.28-28
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• 2006