• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.587-594
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• 2023

In this paper, we present the design and optimization process of an on-body microstrip patch antenna with a paired T-type defect for monitoring fracture recovery of human legs. This antenna is designed to be light, thin and compact despite the improvement of return loss and bandwidth performance by adjusting the size of the T-type defect. The structure around the applied human leg is structured as a 5-layer dielectric plane, and the complex dielectric constant of each layer is calculated using the 4-pole Cole-Cole model parameters. In a normal case without bone fracture, the return loss of the on-body antenna is -66.71dB at 4.0196GHz, and the return loss difference ΔS₁₁ is 37.95dB when the gallus layer have a length of 10.0mm, width of 1.0mme, and height of 2.0mm. A 3'rd degree polynomial is presented to predict the height of the gallus layer for the change in return loss, and the polynomial has a very high prediction suitability as RSS = 1.4751, R² = 0.9988246, P-value = 0.0001841.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3140-3145
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• 2012

In this paper, a design method for a compact slot antenna fed by a coplanar waveguide (CPW) is studied. A T-shaped tuning stub is inserted inside a narrow rectangular slot and the slot is impedance matched to the CPW feedline by adjusting the width, length, and position of the stub. The resonance frequency is adjustable by the slot length and the antenna size can be reduced by bending the slot. The resonance frequency and impedance matching property of the compact slot antenna are similar to those of the half-wavelength slot antenna, which enables one to design compact antenna of this type with ease. A compact slot antenna for 2.45-GHz ISM band is designed, fabricated on an FR4 substrate (dielectric constant of 4.4 and thickness of 0.8 mm), and experimentally tested. The measured results agree well with the simulations, which confirms the validity of this study. The fabricated compact slot antenna shows an impedance bandwidth of 200 MHz(2.32-2.52 GHz) for a VSWR < 2, which is suitable for 2.45-GHz ISM band (2.4-2.48 GHz). The measured radiation patterns show ${\infty}$-shaped directional pattern in the E-plane and nearly omni-directional pattern in the H-plane with a peak gain of 2.0 dBi, which are similar to those of a monopole antenna. The proposed antenna is expected to be suitable for the applications as antennas for WLAN, RFID, and mobile handset.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.10
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• pp.1240-1247
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• 2019

In this paper, we designed a four-band antenna that can be applied to WLAN and WiMAX systems by designing a microstrip feeding structure, four branch lines and a slit on the ground plane. The proposed antenna is designed with a size of 16.0 mm (W1) × 48.0 mm (L8) on a dielectric substrate of 18.0 mm (W) × 50.0 mm (L) × 1.0 mm(h). and a slit of 2.9 mm (W7) × 4.0 mm (L7) is inserted into the ground plane of 18.0 mm (W) × 18.7 mm (L6). Based on -10 dB production and measurement results, it obtained 60.8 MHz (8,730~9,338 MHz), 310 MHz (2.33~2.64 GHz) in the 2.4 GHz band, 420MHz (3.39~3.81 GHz) in the 3.4 GHz band, and 2,070 MHz (4.62~6.69 GHz) in the 5.0 GHz. In addition, the gain and radiation pattern characteristics of the quadrant band are measured from the measurement results anechoic chamber.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.317-328
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• 2017

This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.781-787
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• 2004

In this paper, a novel dual and wide band aperture stacked patch antenna for Cellular/PCS/IMT-2000 base station is presented. It consists of single microstrip patch having notches along the radiating patch, two dielectric substrates and a form material. To achieve wide band characteristic, we utilize the coupling effect between the notched patch and the resonant aperture in the ground plane and by properly cutting notches on the patch, an aperture stacked patch antenna could be designed to yield dual frequency operation. By the proper choice of resonant aperture size and height of a foam material, dual and wide band characteristic could be realized the measured impedance bandwidth(1:1.5 VSWR) of designed antenna at lower band(860 MHz) reaches 77 MHz and covers the Cellular CDMA band(824∼894 MHz). The measured impedance bandwidth(1:1.5 VSMR) of the designed antenna at upper band(1,960 MHz) is about 550 MHz and covers both the PCS band(1,750∼l,870 MHz) and the for-2000 band(1,920∼2,170 MHz). Good broadside radiation with high gain(5.65∼7.4 dBi) characteristics have also been observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.638-647
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• 2003

Triangular patches have been studied, both theoretically and experimentally. We feund that provided radiation characteristics similar to those of rectangular patches, but with smaller size. In this paper, we designed an equilateral triangular microstrip patch antenna using cavity model analysis. Then, in order to improve narrow bandwidth, we add capacitive gap and air gap. Capacitive gap is located with square shape beside feeding point on the patch, and air gap is inserted between substrate dielectric and ground plane to adjust probe inductance. The analysis of characteristics and effects of each component was performed by commercial simulation tool, Ensemble 5.0. Throughout the simulation and experiment, we found the possibility of bandwidth enhancement in triangular microstrip antenna.

• Journal of Biomedical Engineering Research
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• v.29 no.2
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• pp.99-106
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• 2008

To improve $B_1$ homogeneity in high field MRI, the RF power is applied to the transmit array coil elements sequentially in the time-multiplexed way. Since only a single coil element is activated in a time-multiplexing slot, the global standing wave formation in the human body is greatly suppressed. The time-multiplexing slot width is on the order of micro seconds, hence, high-order-harmonic slices can be placed far from the transmit coil and simultaneous multiple slice selection can be avoided. The $B_1$ homogeneities of a birdcage coil and an eight-channel transmit array coil have been compared through finite difference time domain simulations. The simulation results indicate that the proposed technique can reduce the peak-to-peak $B_1$ inhomogeneity down to one fourth of the transmission with a birdcage coil on the central plane of the human head model at 3 T. The mimicking experiments at 3 T, eight separate experiments with a single coil element activated and image reconstruction by combining the eight images, also show promising results. It is expected that the proposed technique has some advantages over other $B_1$ improving methods in real practice since simple RF switching circuitries are only necessary and electromagnetic coupling between the coil elements is out of concern in its realization.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.