• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.478-486
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• 1998

$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system was prepared by reaction of $CaCO_3,\;LaO_3,\;Nd_2CO_3$ and ,TEX>$TiO_2$ mixture at 1673 K, which can be applied for microwave dielectric ceramic materials. The lattice parameters of(1-x))$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system increased with the increase of x. Its structure was investigated by Rietveld profile-analysis of XRD in detail. Cations $ La^{3+}$ and Nd^{3+}$ were located at the $Ca^{2+}$ site in the range of $0\le \textrm x\le0.8$. crystal structure in $;(0\le \textrm x\le0.6)$ maintained space group Pnma with CaTiO_3 structure. The tiled and distorted $TiO_6$ was gradually released with the increase of x in $0\le \textrm x\le0.6$ .The structure was changed to a new space group of $Pmn2_1$ at the x value of 0.8. The relative dielectric constant $(\epsilon_r)$ of $(1-x)CaTiO_3-x(La_{1/3} Nd_{1/3})TiO_3$ ($(0\le \textrm x\le0.8)$) system was exponentially decreased by with the increased of x. The temperature coefficient of resonant frequency $(\tau_f)$ decreased with the increase of x in $0\le \textrm x\le0.6$ and then increased again at x=0.8 due to the change of crystal structure. The value of Q$\cdot f_o$ was 13800 (GHz) at x=0.2 and was very low under 2000 (GHz) in 0.4$\leq$x$\leq$0.8.

• Progress in Medical Physics
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• v.17 no.1
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• pp.1-5
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• 2006

A parallel plate detector containing PTFE films in FEP film for relative dosimetry was designed to measure the response of detectors to S and 10 MV X-rays from a medical linear accelerator through different thicknesses of lead. The dielectric materials were 100 m thick. The set-up conditions for measurements with this detector were as follows: SSD=100 cm the test detector was at a depth of 5 cm and the reference chamber was at a depth of 10 cm from the phantom surface for 6 and 10 MV X-rays. Lead blocks were designed to cover the irradiated field. They were added to the tray to increase thickness sequentially. We found that the detector response decreased exponentially with the thickness of lead added. The linear attenuation coefficients of the test detector and reference chamber were 0.1414 and 0.541, respectively, for 6 MV X-rays and 0.1358 and 0.5279 for 10 MV X-rays. The test detector response was greater than that of the reference chamber. The response function was calculated from the measured values of the test detector and reference chamber using optimization. These optimized constants for the detector response function were independent of theenergy. As a result of optimizing the response function between detectors, the use of a relative dosimeter was validated, because the response of the test detector was 1% for 6 MV X-rays and 4% for 10 MV X-rays.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.99-104
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• 2006

The Langmuir-Blodgett(LB) technique has attracted considerable interest in the fabrication of electrical and electronic devices. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed u and the molecular area Am. Compression speed a was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9$\sim$21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• The Korean Journal of Rheology
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• v.11 no.1
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• pp.9-17
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• 1999

Viscoelastic characteristics of cured phenolic resin/carbon fiber composite materials were investigated through glass transition and degradation reaction processes in the high temperature region up to $400^{\circ}C$. A typical glass transition of the cross-linked thermoset polymer was followed by irreversible degradation reactions, which were exhibited by the increasing storage modulus and loss modulus peak. A degradation master curve was constructed by using the vertical and horizontal shift factors, both of which complied well with the Arrhenius equation in light of the kinetic expression of degradation rate constants. Using an analogy to the Havriliak-Negami equation in dielectric relaxation phenomena, a viscoelastic modeling methodology was developed to characterize the frequency- and temperature-dependent complex moduli of the degrading thermoset polymer composite systems. The temperature-dependent relaxation time of the degrading composites was determined in a continuous fashion and showed a minimum relaxation time between the glass transition and degradation reaction regions. The capability of the developed modeling methodology was demonstrated by describing the complex behavior of the viscoelastic complex moduli of reacting phenolic resin composite systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.317-328
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• 2017

This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.235.1-235.1
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• 2015

Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.