• Title/Summary/Keyword: Dielectric loss tangent ($tan{\delta}$)

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A Study on the Dielectric Polarization of $ITO/Alq_3/Al$ Structure Organic Light-emitting Diodes ($ITO/Alq_3/Al$ 구조 유기 발광 소자의 유전분극 현상의 연구)

  • Oh, Yong-Cheul;Shin, Cheol-Gi;Kim, Chung-Hyeak
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.1
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    • pp.73-77
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    • 2008
  • We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric polarization of organic light-emitting diodes using characteristics of impedance and equivalent circuit of $ITO/Alq_3/Al$. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of $1{\times}40Hz\;to\;1{\times}10^8Hz$. We obtained complex electrical conductivity, dielectric constant, and loss tangent(tan${\delta}$) of the device at room temperature. And, we obtained the equivalent circuit of $ITO/Alq_3/Al$ through analyzing dielectric constant and dielectric loss tangent. From these analyses, we could interpret a conduction mechanism and dielectric polarization.

Simultaneous Measurements of the Loss Tangent of Rutile ($TiO_2$) and the Microwave Surface Resistance of $YBa_2Cu_3O_{7-{\delta}}$ Films using Two Resonant Modes of Rutile -loaded cavity Resonator (루타일이 삽입된 유전체 공진기의 두 공진 모드를 이용한 루타일의 유전손실과 $YBa_2Cu_3O_{7-{\delta}}$ 박막의 마이크로파 표면저항 측정)

  • Lim, J.;Lee, J.H.;Kim, M.J.;Hur, J.;Lee, S.Y.
    • Progress in Superconductivity
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    • v.4 no.2
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    • pp.137-143
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    • 2003
  • In measuring the microwave surface resistance of high-Tc superconductor (HTS) films using the dielectric-loaded cavity resonator method, one of the most important factors that limit the measurement sensitivity is the measurement error in the loss tangent ($tan\delta$) of the dielectric rod placed inside the cavity. We have measured the effective surface resistance ( $R_{S}$ $^{eff}$) of$ YBa_2$$_Cu3$$_{7-{\delta}}$ (YBCO) films and the $tan\delta$ of rutile ($TiO_2$) using the 'two-tone'method suggested by Kobayashi et at. [IEEE, MTT-S Digest, 495, (2001)], which enables simultaneous measurements of both the $R_{S}$ $^{eff}$ fof HTS films and the $tan\delta$ of the rutile with high sensitivity. A rutile-loaded cavity resonator with the $TE_{012}$ and $TE_{021}$ resonant frequencies at 13.67 - 14.01 GHz is used for this purpose. At temperatures where the two modes do not couple with other modes, the $R_{S}$ $^{eff}$ of YBCO films and $tan\delta$ of rutile measured by the two-tone method appear to match well with the corresponding values measured using the reported $tan\delta$ values of sapphire within 10 %. Usefulness of the 'two-tone' method for microwave characterization of HTS films and dielectrics is discussed.d.ielectrics is discussed.ussed.

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A Study on Electrical Degradation Properties of Epoxy Resin due to Moisture Absorption (흡습에 의한 에폭시 수지의 전기적 열화 특성에 관한 연구)

  • Lee, Sung Ill
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.9
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    • pp.656-661
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    • 2013
  • In this study, the moisture content, charge discharge current, electrostatic capacity and dielectric loss tangent are measured for the specimen of bisphenol type epoxy resin which is mixed with squared amorphous silica filler and dipped in hot water of $50^{\circ}C$ for 169 days. The results of this study are listed below. The longer of deposition day, the charge and discharge current was increased. It is considered that the reason is because there was water attack through the squared silica surface. The longer of deposition day, the absorption rate of all specimens was increased. It found that the absorption rate reached saturated state after 100 days. The higher frequency and the longer of deposition day, the $tan{\delta}$ was decreased. Also, It found that the $tan{\delta}$ and electrostatic capacity of the specimen which is mixed with squared filler are greater.

Dielectric Properties depending on Frequency in ITO/$Alq_3$/Al (ITO/$Alq_3$/Al의 주파수 변화에 따른 유전 특성)

  • Oh, Y.C.;Lee, D.K.;Kim, J.S.;Shin, C.G.;Lee, S.I.;Kim, C.H.;Kim, T.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.292-293
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    • 2006
  • We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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Dielectric Properties depending on Frequency in Organic Light-emitting Diodes using $Alq_3$ (Alq3를 이용한 유기 발광 소자의 주파수에 변화에 따른 유전 특성)

  • Oh, Y.C.;Lee, D.K.;Chung, D.H.;Lee, H.S.;Park, G.H.;Kim, T.W.;Lee, J.U.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.293-294
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    • 2005
  • We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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Dielectric Properties Depending on Temperature in Organic Light-emitting Diodes(ITO/$AIq_3$/AI) (유기 발광 다이오드(ITO/$AIq_3$/AI)의 온도 변화에 따른 유전 특성)

  • Oh, Y.C.;Lee, D.K.;Cho, C.N.;Ahn, J.H.;Jeong, Dong-Hui;Lee, S.I.;Kim, G.Y.;Kim, T.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.74-75
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    • 2006
  • We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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A study on insulation Characteristics of XLPE by various additives (다양한 첨가제에 따른 가교폴리에틸렌의 절연특성 분석)

  • Song, Sang-Min;Kim, Gyu-Sik;Son, Won-Keun;Ryu, Boo-Hyung;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.193-196
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    • 2001
  • XLPE is occasionally happened to deteriorate cable insulation characteristics. It is happened to do a breakdown state by the degradation of electrical characteristic and electrical breakdown strength. I prepared TR-XLPE (Tree-Retardant XLPE) as adding various additives to prevent its states. Various additives are treeing retardants, anti-oxidants. Treeing retardants three kinds of aromatic compounds as adding each additive. Anti-oxidants use quinone compound and cresol compound as adding each additive. In order to observe each electrical characteristics, I measured breakdown strength, relative dielectric constant$({\varepsilon}_r)$, dielectric loss tangent$(tan{\delta})$. TR-XLPE specimens as adding treeing retardants and anti-oxidants enhance breakdown strength, ${\varepsilon}_r$, $tan{\delta}$ than pure XLPE.

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Dielectric Properties depending on Bias Voltage in Organic Light-emitting Diodes (유기 발광 소자의 바이어스 전압에 따른 유전 특성)

  • Oh, Yong-Cheul;Lee, Joon-Ung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.1038-1042
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    • 2005
  • We have investigated dielectric properties depending on bias voltage in organic light-emitting diodes using 8-hydroxyquinoline aluminum $(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. Impedance characteristics was measured complex impedance Z and phase $\theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent $(tan\delta)$ of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

Mechanical and electrical properties of insulating materials at cryogenic temperature (극저온에서의 절연재료의 기계적.전기적 성질)

  • 김상현;마대영;김현희;정순용;김영석
    • Electrical & Electronic Materials
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    • v.9 no.10
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    • pp.1033-1039
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    • 1996
  • Electrical and mechanical properties of polymer sheet at cryogenic temperature have been investigated. Tensile stress(and strain at break) in liquid nitrogen(77K) of 79.7MPa(l.2%) and 117.4MPa(2.05%) are evaluated for films of Polypropylene (PP) and Kapton, respectively. Dielectric loss tangent(tan .delta.) of PP and Kapton films is almost independent of the frequency and tensile stress. Also, field strength of PP film at 77K decreases with increasing the tensile stress.

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Dielectric-Spectroscopic and ac Conductivity Investigations on Manganese Doped Layered Na1.9Li0.1Ti3O7 Ceramics (망간이 혼입된 층상구조 Na1.9Li0.1Ti3O7 세라믹스의 유전율 ‒ 분광법과 교류 전도도 측정 연구)

  • Pal, Dharmendra;Pandey, J.L.;Shripal
    • Journal of the Korean Chemical Society
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    • v.53 no.1
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    • pp.42-50
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    • 2009
  • The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.