• 제목/요약/키워드: Dielectric loss tangent ($tan{\delta}$)

검색결과 26건 처리시간 0.019초

$ITO/Alq_3/Al$ 구조 유기 발광 소자의 유전분극 현상의 연구 (A Study on the Dielectric Polarization of $ITO/Alq_3/Al$ Structure Organic Light-emitting Diodes)

  • 오용철;신철기;김충혁
    • 전기학회논문지
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    • 제57권1호
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    • pp.73-77
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    • 2008
  • We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric polarization of organic light-emitting diodes using characteristics of impedance and equivalent circuit of $ITO/Alq_3/Al$. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of $1{\times}40Hz\;to\;1{\times}10^8Hz$. We obtained complex electrical conductivity, dielectric constant, and loss tangent(tan${\delta}$) of the device at room temperature. And, we obtained the equivalent circuit of $ITO/Alq_3/Al$ through analyzing dielectric constant and dielectric loss tangent. From these analyses, we could interpret a conduction mechanism and dielectric polarization.

루타일이 삽입된 유전체 공진기의 두 공진 모드를 이용한 루타일의 유전손실과 $YBa_2Cu_3O_{7-{\delta}}$ 박막의 마이크로파 표면저항 측정 (Simultaneous Measurements of the Loss Tangent of Rutile ($TiO_2$) and the Microwave Surface Resistance of $YBa_2Cu_3O_{7-{\delta}}$ Films using Two Resonant Modes of Rutile -loaded cavity Resonator)

  • 임준;이재훈;김민정;허정;이상영
    • Progress in Superconductivity
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    • 제4권2호
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    • pp.137-143
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    • 2003
  • In measuring the microwave surface resistance of high-Tc superconductor (HTS) films using the dielectric-loaded cavity resonator method, one of the most important factors that limit the measurement sensitivity is the measurement error in the loss tangent ($tan\delta$) of the dielectric rod placed inside the cavity. We have measured the effective surface resistance ( $R_{S}$ $^{eff}$) of$ YBa_2$$_Cu3$$_{7-{\delta}}$ (YBCO) films and the $tan\delta$ of rutile ($TiO_2$) using the 'two-tone'method suggested by Kobayashi et at. [IEEE, MTT-S Digest, 495, (2001)], which enables simultaneous measurements of both the $R_{S}$ $^{eff}$ fof HTS films and the $tan\delta$ of the rutile with high sensitivity. A rutile-loaded cavity resonator with the $TE_{012}$ and $TE_{021}$ resonant frequencies at 13.67 - 14.01 GHz is used for this purpose. At temperatures where the two modes do not couple with other modes, the $R_{S}$ $^{eff}$ of YBCO films and $tan\delta$ of rutile measured by the two-tone method appear to match well with the corresponding values measured using the reported $tan\delta$ values of sapphire within 10 %. Usefulness of the 'two-tone' method for microwave characterization of HTS films and dielectrics is discussed.d.ielectrics is discussed.ussed.

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흡습에 의한 에폭시 수지의 전기적 열화 특성에 관한 연구 (A Study on Electrical Degradation Properties of Epoxy Resin due to Moisture Absorption)

  • 이성일
    • 한국전기전자재료학회논문지
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    • 제26권9호
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    • pp.656-661
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    • 2013
  • In this study, the moisture content, charge discharge current, electrostatic capacity and dielectric loss tangent are measured for the specimen of bisphenol type epoxy resin which is mixed with squared amorphous silica filler and dipped in hot water of $50^{\circ}C$ for 169 days. The results of this study are listed below. The longer of deposition day, the charge and discharge current was increased. It is considered that the reason is because there was water attack through the squared silica surface. The longer of deposition day, the absorption rate of all specimens was increased. It found that the absorption rate reached saturated state after 100 days. The higher frequency and the longer of deposition day, the $tan{\delta}$ was decreased. Also, It found that the $tan{\delta}$ and electrostatic capacity of the specimen which is mixed with squared filler are greater.

ITO/$Alq_3$/Al의 주파수 변화에 따른 유전 특성 (Dielectric Properties depending on Frequency in ITO/$Alq_3$/Al)

  • 오용철;이동규;김진사;신철기;이성일;김충혁;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.292-293
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    • 2006
  • We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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Alq3를 이용한 유기 발광 소자의 주파수에 변화에 따른 유전 특성 (Dielectric Properties depending on Frequency in Organic Light-emitting Diodes using $Alq_3$)

  • 오용철;이동규;정동회;이호식;박건호;김태완;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.293-294
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    • 2005
  • We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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유기 발광 다이오드(ITO/$AIq_3$/AI)의 온도 변화에 따른 유전 특성 (Dielectric Properties Depending on Temperature in Organic Light-emitting Diodes(ITO/$AIq_3$/AI))

  • 오용철;이동규;조춘남;안준호;정동희;이성일;김귀열;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.74-75
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    • 2006
  • We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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다양한 첨가제에 따른 가교폴리에틸렌의 절연특성 분석 (A study on insulation Characteristics of XLPE by various additives)

  • 송상민;김규식;손원근;류부형;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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    • pp.193-196
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    • 2001
  • XLPE is occasionally happened to deteriorate cable insulation characteristics. It is happened to do a breakdown state by the degradation of electrical characteristic and electrical breakdown strength. I prepared TR-XLPE (Tree-Retardant XLPE) as adding various additives to prevent its states. Various additives are treeing retardants, anti-oxidants. Treeing retardants three kinds of aromatic compounds as adding each additive. Anti-oxidants use quinone compound and cresol compound as adding each additive. In order to observe each electrical characteristics, I measured breakdown strength, relative dielectric constant$({\varepsilon}_r)$, dielectric loss tangent$(tan{\delta})$. TR-XLPE specimens as adding treeing retardants and anti-oxidants enhance breakdown strength, ${\varepsilon}_r$, $tan{\delta}$ than pure XLPE.

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유기 발광 소자의 바이어스 전압에 따른 유전 특성 (Dielectric Properties depending on Bias Voltage in Organic Light-emitting Diodes)

  • 오용철;이준웅
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.1038-1042
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    • 2005
  • We have investigated dielectric properties depending on bias voltage in organic light-emitting diodes using 8-hydroxyquinoline aluminum $(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. Impedance characteristics was measured complex impedance Z and phase $\theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent $(tan\delta)$ of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

극저온에서의 절연재료의 기계적.전기적 성질 (Mechanical and electrical properties of insulating materials at cryogenic temperature)

  • 김상현;마대영;김현희;정순용;김영석
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.1033-1039
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    • 1996
  • Electrical and mechanical properties of polymer sheet at cryogenic temperature have been investigated. Tensile stress(and strain at break) in liquid nitrogen(77K) of 79.7MPa(l.2%) and 117.4MPa(2.05%) are evaluated for films of Polypropylene (PP) and Kapton, respectively. Dielectric loss tangent(tan .delta.) of PP and Kapton films is almost independent of the frequency and tensile stress. Also, field strength of PP film at 77K decreases with increasing the tensile stress.

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망간이 혼입된 층상구조 Na1.9Li0.1Ti3O7 세라믹스의 유전율 ‒ 분광법과 교류 전도도 측정 연구 (Dielectric-Spectroscopic and ac Conductivity Investigations on Manganese Doped Layered Na1.9Li0.1Ti3O7 Ceramics)

  • Pal, Dharmendra;Pandey, J.L.;Shripal
    • 대한화학회지
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    • 제53권1호
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    • pp.42-50
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    • 2009
  • 유전율-분광법과 교류 전도도 측정 연구를 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에 시도하였다. 373-723K 온도와 100Hz-1MHz 주파수 영역에서 loss 탄젠트 (Tan$\delta$), 상대적 유전율 ($\varepsilon_{r}$) 그리고 교류 전도 도 ($\sigma_{ac}$)의 의존성을 혼입 유도체들에 대하여 조사하였다. 다양한 전도도 메커니즘이 존재하는데 MSLT-1과 MSLT-2의 경우에는 낮은 온도영역에서 전자에 의한 전도도를 보인다. MSLT-3의 경우에는 금지된 층간 이온 전 도도가 전자 전도도와 함께 존재한다. 이러한 층간 이온 전도도는 모든 혼입 유도체들에 대하여 중간 온도 영역에 존재한다. 가장 높은 온도 영역에서는 MSLT-1과 MSLT-2의 경우에는 이온 전도도와 polaron에 의한 전도도가 존재하고 MSLT-3에 대하여는 이온 전도도 만이 존재한다. 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에서 Loss 탄젠트 (Tan$\delta$)는 전자 전도도와 쌍극자의 위치, 그리고 공간 전하 분극화에 기인한다. 상대적 유전율의 증가는 층간 에 쌍극자 수의 증가에 기인하고 반면 상대적 유전율의 감소는 높은 혼입율에 따른 누전 전류의 증가에 기인한다.