• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.229-232
• /
• 1997

A free space transmission method using standard gain horn antennas in the frequency range from 9.0 to 10.5GHz is applied to determine the dielectric properties of grain such as rough rice, brown rife and barley. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The effect of density fluctuation, which is an important parameter governing the dielectric properties of grain, on the dielectric constant and loss factor is presented. A new density-independent model in terms of measured attenuation and moisture density is proposed for reducing the effects of density fluctuation on the moisture content measurement.

• 한국세라믹학회지
• /
• 제42권10호
• /
• pp.698-702
• /
• 2005

Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.1250-1251
• /
• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제11C권3호
• /
• pp.70-74
• /
• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• 한국세라믹학회지
• /
• 제33권11호
• /
• pp.1195-1202
• /
• 1996

To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.210-210
• /
• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 매우 중요하다. 왜냐하면 초고주파로 갈수록 기판의 전기적인 특성이 circuit에 많은 영향을 미치고 이러한 영향을 고려한 circuit를 설계해야 원하는 결과를 얻을 수 있기 때문이다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 캐패시터를 이용해 정확하게 측정하고자 했다. 캐패시터의 conductor material은 Cu를 사용하였고 PI 기판의 투께는 25um 를 이용하였다. PI 기판의 유효 유전율은 캐패시터 측정에 의한 data률 EM simulation tool 을 통해 분석한 후 간단한 수식에 의해 구했다. 또한 PI 기판의 loss tangent 값을 구하기 위해 캐패시터의 dissipation factor를 분석하였다. 캐패시터의 dissipation factor는 dielectric loss, AC 저항에 의한 loss, DC 저항에 의한 loss를 포함한다, DC 저항에 의한 loss는 dissipation factor에 차지하는 비율이 낮기 때문에 생략이 가능하다. 하지만 AC 저항에 의한 loss는 주파수에 비례하여 값이 커지게 된다. 따라서 주파수가 올라 갈수록 dissipation factor도 상승하게 되는데 주파수의 전 대역에서 AC 저항에 의한 loss를 보정해주면 dielectric loss를 얻을 수 있다. 추출된 dielectric loss를 통해 PI 기판의 loss tangent 값을 구하였다. 캐패시터를 이용한 PI 기판의 전기적 특성 추출은 간단한 구조를 통해 얻을 수 있기 때문에 다른 재료의 기판의 전기적 특성을 추출하는데도 이용이 용이하다.

• 한국세라믹학회지
• /
• 제32권10호
• /
• pp.1111-1116
• /
• 1995

To use dielectric material of high power multilayer capacitor, the composition of the commercial CaTiO3 was changed to decrease the sintering temperature, and the physical and electrical properties were investigated. Series of experiments showed that CaTiO3 with sintering additives had the highest density, the highest shrinkage, the lowest dielectric constant, the lowest loss factor, and the lowest temperature coefficient of capacitance (TCC). These properties had the constant values at sintering temperature of above 120$0^{\circ}C$.

• 폴리머
• /
• 제31권6호
• /
• pp.474-478
• /
• 2007

다이사이클로펜타다이에닐 비스페놀 시아네이트 에스터 올리고머와 열가소성 수지인 폴리페닐렌에테르(PFE)를 복합체화함으로써 유전손실이 적은 고분자 기판소재를 제작하였다. 올리고머와 촉매의 경화반응을 분석하여 최적 촉매첨가량을 Zn 0.02 phr로 선정하고 이를 복합체 제작에 적용하였다. 올리고머와 PPE의 함량비를 변화시키며 제작된 복합체의 동박 박리 강도, gel content 등을 측정하였으며, GHz 대역에서의 유전율과 유전손실을 평가하였다. PPE의 함량은 박리 강도 및 유전특성에 큰 영향을 주었으나, 촉매의 함량에 따라서는 유전특성에 큰 차이가 없었다. 실험결과 박리 강도가 1 kN/m 이상이고, 1 GHz에서 유전손실이 0.004로 낮은 고분자 복합체 라미네이트를 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.222-222
• /
• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• 한국전기전자재료학회논문지
• /
• 제15권4호
• /
• pp.356-360
• /
• 2002

The piezoelectric properties of $0.05Pb(Al_{0.5}Nb_{0.5})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3+0.7wt%Nb_2O_5+o.5wt%MnO_2$ ceramics with the additive of BaCO$_3$were investigated. As the addition of BaCO$_3$increased from 0 to 0.4 wt%, the dielectric constant ($\epsilon^T _{33}$), piezoelectric constant ($d_33$), electromechanical coupling factor ($k_p$), and mechanical quality factor ($Q_m$) increased, while the dielectric loss ($tan\delta$) decreased. The highest piezoelectric and dielectric properties were observed at $1200^{\circ}C$ of the sintered temperature with 0.4 wt% of $BaCO_3$, and the properties of $d_33$, $k_p$, and $Q_m$ were 339 pC/N, 60% and 1754, respectively.