• Title/Summary/Keyword: Dielectric function

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Dielectric sensor for cure monitoring of composite materials (복합재료 경화도 측정을 위한 유전 센서)

  • 김학성;권재욱;김진국;이대길;최진경;김일영
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2001.05a
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    • pp.219-223
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    • 2001
  • The on-line cure monitoring during the cure process of composite materials is important for better quality and productivity. The dielectric sensor for cure monitoring consists of base film and electrodes. Because the characteristic of dielectric sensor for the on-line cure monitoring is dependent on the base material, width and number of electrode, etc, the dielectric sensor should be standardized. And the selection of base film material of sensor is very important. In order to prevent the measuring errors generated from the increase of environmental temperature, the base film material should have stable dielectric constant with respect to environmental temperature. In this study, the newly developed dielectric sensor for cure monitoring was designed and the dissipation factor which is function of degree of cure was measured using the sensor. The relationship between the dissipation factor and degree of cure with respect to environmental temperature was investigated.

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Dielectric Properties of BSCT Ceramics for Phase Array Antenna (위상차 배열 안테나용 BSCT 세라믹스의 유전특성)

  • 조현무;이성갑;임성수;박인길
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.989-992
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    • 2001
  • (Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

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A Study on the Dielectric Breakdown Strength and Transparency of Dielectric Layer on the Discharge Electrodes in PDP (PDP에서 방전전극상의 유전층의 절연내력과 투명도에 관한 연구)

  • Lee, Sung-Hyun;Kim, Young-Kee;Chi, Sung-Won;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.379-381
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    • 1997
  • The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion and from a sheath of wall charges which are essential to memory function of AC PDP. Furthermore, this layer should be transparent because the visible light must pass through the layer. In this paper, the dielectric breakdown strength and transparency of the dielectric layer on the discharge electrodes are studied. The variables in this test are the dielectric layer thickness, dielectric firing condition, gas pressure, species of gas and so on.

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Nonlinear Dielectric Properties of VDCN Copolymers (VDCN계 공중합체의 비선형 유전 특성)

  • Gang, Dae-Ha;Park, Sang-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.7
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    • pp.279-286
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    • 2002
  • Linear and nonlinear complex permittivities were measured for copolymers of vinylidene cyanide(VDCN) with vinyl acetate(VAc), vinyl propionate(VPr), vinyl bezoate(VBz), styrene(St) and methyl methacrylate(MMA). Experimental results are well fitted by the function (equation omitted) except at low frequency where dc conduction dominates. The analysis of dielectric relaxation mechanism by combined knowledge about linear and nonlinear dielectric permittivities and dipoles give us informations about electrical and thermal motions in these copolymers. According to the analysis it could be found that the variation for temperature of the dielectric relaxation strength in these copolymers is related to the interaction between dipoles and the nonlinear dielectric effect factor R$_{s}$ is proportional to square of the dipolar correlation factor R$_{p}$././.

Strain Analysis for Quality Factor oft he Layered Mg0.93Ca0.07TiO3-(Ca0.3Li0.14Sm0.42)TiO3 Ceramics at Microwave Frequencies

  • Cho, Joon-Yeob;Yoon, Ki-Hyun;Kim, Eung-Soo
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.222-225
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    • 2002
  • Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

The study on low dielectric thin film deposition using DEMS precursor by PECVD (DEMS(Diethoxymethylsilane) precursor를 이용한 PECVD 저유전물질 박막증착연구)

  • Kang, Min-Goo;Kim, Dae-Hee;Kim, Yeong-Cheol;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.4
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    • pp.35-39
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    • 2008
  • We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

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Dielectric Characteristics on Filler Content and Sintering Temperature in Pb-Free White Dielectric Layer (Pb-Free 백색유전체에서 필러함량과 소성온도에 따른 유전체 특성)

  • An, Yong-Tae;Choi, Byung-Hyun;Ji, Mi-Jung;Lee, Jung-Min;Kim, Hyun-Sun;Jung, Kyung-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.755-759
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    • 2008
  • For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

Dual-function Dynamically Tunable Metamaterial Absorber and Its Sensing Application in the Terahertz Region

  • Li, You;Wang, Xuan;Zhang, Ying
    • Current Optics and Photonics
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    • v.6 no.3
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    • pp.252-259
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    • 2022
  • In this paper, a dual-function dynamically tunable metamaterial absorber is proposed. At frequency points of 1.545 THz and 3.21 THz, two resonance peaks with absorption amplitude of 93.8% (peak I) and 99.4% (peak II) can be achieved. By regulating the conductivity of photosensitive silicon with a pump laser, the resonance frequency of peak I switches to 1.525 THz, and that of peak II switches to 2.79 THz. By adjusting the incident polarization angle by rotating the device, absorption amplitude tuning is obtained. By introducing two degrees of regulation freedom, the absorption amplitude modulation and resonant frequency switching are simultaneously realized. More importantly, dynamic and continuous adjustment of the absorption amplitude is obtained at a fixed resonant frequency, and the modulation depth reaches 100% for both peaks. In addition, the sensing property of the proposed MMA was studied while it was used as a refractive index sensor. Compared with other results reported, our device not only has a dual-function tunable characteristic and the highest modulation depth, but also simultaneously possesses fine sensing performance.

Measurement of Grain Moisture Content using RF Impedance (I) - Electrical Properties of Grain - (고주파 임피던스를 이용한 곡류의 함수율 측정에 관한 연구 (I) - 곡류의 전기적 특성 구명 -)

  • 김기복;노상하
    • Journal of Biosystems Engineering
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    • v.24 no.2
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    • pp.123-134
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    • 1999
  • The electrical properties such as dielectric constant, dielectric loss factor and AC conductivity of grain were presented to measure the moisture content of grain using RF impedance. At frequency ranging from 1 to 10MHz and room temperature, $20^{\circ}C$, vector network analyzer(HP4195) and coaxial type sample holder were used to analyze the electrical properties of paddy(11∼24%w.b.), brown rice(11∼18%w.b.), barley(11∼21%w.b.) and wheat(11∼23%w.b.) depending on the moisture content, frequency and bulk density. The dielectric constant and AC conductivity of grain samples increased with moisture content and bulk density. The dielectric constants decreased with frequency and could be expressed as function of the moisture density(decimal moisture $content{\times}bulk$ density).

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Analysis for shielding effectiveness of a satellite electronic equipment enclosure with a dielectric-backed aperture (유전체로 막힌 개구를 갖는 위성 전자 장비 함체의 차폐 효과 해석)

  • Kim, Su-Han;Lee, Jae-Hyun
    • Journal of Satellite, Information and Communications
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    • v.3 no.1
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    • pp.35-40
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    • 2008
  • In this paper, a new analytical formulation is presented for calculating shielding effectiveness (SE) of shielding enclosure including satellite electronic components and equipments. The shielding enclosure has a dielectric-backed aperture. The SE may be a function of frequency, dielectric constant, and position within the enclosure. And, the formulation has been extended for calculation of the SE of the structure where the one side of dielectric is partially backed by conductor. Our simulation results give that the dielectric material lowers the Q factor, and the further the observation point is from the aperture, the more SE increases.

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