• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.199-202
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• 1998

In examining application of polymer as electrical insulators, it is very important to perform accelerated aging test substituted the process which polymer insulator is degraded for long-time by the process of short-time. The purpose of this paper is to examine the properties of water degradation which affect on the efficiency of epoxy insulator. To do this, the surface properties on epoxy insulating material have been investigated after long-time accelerated degradation in boiling water condition. The experimental results showed the contact angle and surface resistivity after treatment to decrease the sample of water treatment. In dielectric properties, dielectric constant was increased by the aging development with water treatments.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1371-1373
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• 2000

In this paper, the complex accelerating degradation of traction motor driven with VVVF controlled inverter were performed on the form coil samples with the 200 Class insulation system. in order to evaluate the reliability and the long-term life. After aging, the dielectric and PD properties were investigated on the 10 cycles aging sample in the range of $20{\sim}160[^{\circ}C]$ and AC $250{\sim}2250[V]$ to diagnosis the condition of end-life and find the dominative factors of degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.57-60
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.6
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• pp.1087-1094
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• 2010

We have developed a cylindrical multi-terminal capacitive-conductive sensor that could be attached to the internal surface of cooling system pipe to evaluate capacitance and conductivity of heat transfer fluid. It was used as measuring system to diagnose insulating condition, by which was kept a insulating resistance of inner stack and at the same time was cooled electrochemical heat of reaction of FCEV(fuel cell electric vehicle) stack that used a compressed hydrogen gas reacting with oxygen in accordance with variation on thermal degradation of nonconductive heat transfer fluid. Also to assess diagnosis characteristics of heat transfer fluid, i.e. coolant, we have performed accelerated aging test using developed sensor attached to cooling system. Consequently, it was measured dielectric and electric resistance of coolant to estimate and analyse for dielectric properties by degradation condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.169-172
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• 2000

In this paper, we evaluated the mechanical and dielectric properties of LDPE depend on $Co_{60}$${\gamma}$-irradiation doses. The chemical analyses for FT-IR, gel content, the mechanical properties for elongation at break and the dielectric parameters for permittivity, tan$\delta$ were discussed as a function of irradiation doses. Test result presented that elongation at break of irradiated LDPE was inversely proportional to gel content. For dielectric analyses, permittivity showed a salient characteristic for various irradiation doses, it was related to polar groups caused radiation degradation and tan$\delta$ of irradiated LDPE increased with irradiation doses.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1432-1435
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• 1998

Influences of carbon black contents on the tracking resistance, tan $\delta$ and dielectric constant volume resistivity and dielectric strength of EPDM compounds before and after a exposure to UV radiation were investigated. Carbon black content up to 1.5 phr have a positive effect to improve the resistance to tracking and erosion, since carbon black diminish the leakage current. Results from the study reveal that both tan $\delta$ and dielectric constant volume resistivity and dielectric strength are unaffected by adding of carbon black up to 2.0 phr and carbon black have a significant effect to suppress the photo-degradation of EPDM compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.396-403
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• 2004

The dielectric properties of Y-ray irradiated and thermally aged polyetheretherketone (PEEK) have been investigated. Results of the temperature dependency of dielectric properties indicated that the glass transition temperature of aged PEEK increased as radiative and thermal ageing. The frequency dependency of dielectric properties implied that the magnitude of radiation and thermal induced dipoles, ions increased as radiative and thermal ageing. The values of relaxation intensity calculated using Cole-Cole's circular arc can be useful for evaluation of degradation level of PEEK.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.218-220
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• 1996

This paper was evaluated dielectric characteristics and temperature dependency in the XLPE with and without void. Each dielectric loss was $3.5{\times}10^{-4}$(%) and a little decreased with temperature's increase. Capacitance presented a contant value. According as the study is obtained results, loss in the XLPE increased in proportion to square of applied voltage. As a result of the study, it was knowed that dielectric characteristics had a great deal to do with degradation in the high voltage dielectric materials.