• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.353-358
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• 2017

In order to reduce the size of the previous stepped slot antenna for UWB applications(3.1 ~ 10.6 GHz) to half, an open ended stepped slot antenna is proposed. The proposed antenna consists of a stepped slot etched on the ground plane as radiation part and a microstrip feed-line with rectangular patch on the top plane for wideband impedance matching. The proposed antenna is designed and fabricated on the FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm and size of $28.5{\times}32mm^2$. The measured impedance bandwidth (${\mid}S_{11}{\mid}{\leq}-10dB$) of the fabricated antenna is 7.99 GHz(3.01~11 GHz) which is sufficient to cover UWB band (3.1 ~ 10.6 GHz). In particular, it has been observed that antenna has a good omnidirectional radiation patterns and high gain over the entire frequency band of interest even though the size of the proposed antenna is reduced to half when compared with the previous antenna.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Journal of the Korean Electrochemical Society
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• v.19 no.4
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• pp.123-128
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• 2016

In this study, poly(vinylidene fluoride-co-hexafluoropropylene) (PVdF-HFP)-based gel polymer electrolyte incorporating nano-size $Al_2O_3$ ceramic particle was prepared by electrospinning. The gel polymer electrolyte (GPE) incorporated with $Al_2O_3$ ceramic particle showed higher ionic conductivity of $9.5{\times}10^{-2}Scm^{-1}$ than pure PVdF-HFP GPE without ceramic particle and improved the electrochemical stability up to 5.2 V. The GPEs were assembled with $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ (NMC) cathode for electrochemical test. The GPE batteries at 0.1 C-rate delivered $168.2mAh\;g^{-1}$ for pure GPE and $189.6mAh\;g^{-1}$ for hybrid GPE, respectively. Therefore, the incorporation of high dielectric constant ceramic particle will be good strategy to enhance the stability and electrochemical properties of lithium ion gel polymer batteries.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Journal of Advanced Navigation Technology
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• v.20 no.5
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• pp.490-495
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• 2016

In the present study, a microstrip-fed monopole antenna is proposed for wireless local area network (WLAN) operations which cover dual band of 2.4 GHz (2.4 ~ 2.484 GHz) and 5 GHz (5.15 ~ 5.825 GHz). In order to obtain its compact structure and good omnidirectional radiation patterns, a modified inverted L-shaped slot separated from ground for impedance matching in 5 GHz band is etched on 2.4 GHz printed monopole antenna. The proposed antenna is designed and fabricated on a FR4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of $30{\times}45mm^2$. The measured impedance bandwidths (${\mid}S_{11}{\mid}{\leq}-10dB$) of fabricated antenna are 270 MHz (2.22 ~ 2.48 GHz) in 2.4 GHz band and 890 MHz (5.08 ~ 5.97 GHz) in 5 GHz band respectively. In particular, high gain of more than about 4 dBi and good omnidirectional radiation patterns have been observed over the entire frequency band of interest.

• The Journal of the Acoustical Society of Korea
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• v.23 no.2
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• pp.103-108
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• 2004

In this paper, all the materials constants of the PMN-32%PT single crystals grown by the solid state crystal growth method were measured by the resonance method. PMN-PT crystals of tetragonal symmetry have six elastic constants, three piezoelectric constants and two dielectric constants for their independent material constants. These materials constants were extracted from six sets of crystal samples of each different geometry to have different vibration modes respectively. Measured results showed that the crystal has larger electromechanical coupling factor k/sub 33/ (∼86%) and piezoelectric constant d/sub 33/ (∼1200pC/N) than conventional piezoceramics. Validity of the measurement was confirmed through comparison of the results with the impedance spectrum from finite element analysis of the samples and the results measured with a commercial do meter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.691-697
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• 2016

In this paper, we propose the antenna to appropriate for a UWB communication system, and it meets characteristics for location recognition in predetermined range. Proposed tapered slot antenna was designed through the HFSS simulation tool of Ansys. Inc., it was produced by Taconic TRF-45 based on dielectric constant of 4.5, loss tangent 0.0035, thickness 1.62mm. The tapered slot antenna is analyzed the standing wave ratio and reflection coefficient, radiation pattern in the frequency domain. The impedance bandwidth range of the produced tapered slot antenna is from 3.8 ~ 8.9GHz to 5.1GHz, E-plane and H-plane radiation pattern meet directional antenna characteristics for indoor and outdoor location recognition in predetermined range. The antenna gain is 7.4 dBi(6GHz)in the simulation, the result of measurement demonstrated 7.4 dBi(6 GHz) of antenna maximum gain. Proposed tapered slot antenna meets UWB communication system but simulated and measured results were slightly different.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.505-511
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• 2003

In this paper, a driving amplifier stage with 1 Watt output has been designed and fabricated, which is operating at UHF band( 470 ∼ 806 MHz) for digital TV repeater. In the driving amplifier stage, preamplifier and 1 Watt unit amplifier are integrated by one electric substrate which is 2.53 in dielectric constant and 0.8 mm thickness. When the driving amplifier stage is flown by bias voltage of 28 V DC and current of 900 mA. it has the gain of more than 53.5 dB. the gain flatness of $\pm$0.5 dB and return loss of less than -15 dB in 470 ∼ 806 MHz. Also, when two signals at 2 MHz frequency interval are input port into the driving amplifier stage with 1 Watt output, it resulted in excellent characteristics to designed specification with showing intermodulation distortion characteristics of more than 48 dBc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2512-2520
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• 2013

In this paper, the T-SRR (Triple Split Ring Resonator) using MNG (mu-Negative) meta-material adapted in a low-loss bandpass filter with 3-stages is suggested. The size of the T-SRR in the proposed bandpass filter with low dielectric constant PCB can be easily controlled. And the ${\lambda}/4$ transmission line theory is applied. The proposed T-SRR and filter have the center frequency of 10 GHz with QL value of 184 for military-satellite communication system in I band. The experimental results of the filter show that the insertion and return losses are 1.44 dB and 17.3 dB with bandwidth of 10 %, respectively. The proposed filter will be redesigned by IPD material etc. should be placed here. These instructions give you guidelines for preparing papers for JICCE.