• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.185.2-185.2
• /
• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Korean Journal of Materials Research
• /
• v.2 no.2
• /
• pp.151-156
• /
• 1992

Using $Ba(OH)_2{\cdot}8H_2O, \;Sr(OH)_2{\cdot}8H_2O$ and $Ti(i-OC_3H_7)_4$, fine $(Ba_{1-x}, \;Sr_{x})TiO_3$ powders were synthesized through sol-gel process. The particle size of the powders calcined at $700^{\cric}C$ proved to be 20-40nm by the observation of TEM micrographs and measurement of BET specific surface area. The analysis of XRD patterns showed that the phase of the powders was cubic, and it was identified with the lattice parameters determined through XRD patterns and the shift of (112) peaks that the solid solution powders were synthesized. It was expected through the analysis of relative ratio of cations and the uniformity of compositions in the powders examined by EDAX analysis and relative dielectric constant measurements for sintered body that the distribution of cations was uniform in particle unit.

• Korean Journal of Materials Research
• /
• v.7 no.1
• /
• pp.33-39
• /
• 1997

Single phase pero~~skite lead lanthanum titanate thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrates at the temperature of $480^{\circ}C$ by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using metal organic sources $Pb(DPM)_2$ pre-flowing treatment in ECIi oxygen plasma before fabricating PLT films 11romote the perovskite nucleation due to stable supplying of the $Pb(DPM)_2$ and providing the F'h-rich atmosphere in the early stage of deposition. $Pb(DPM)_2$ pie-flonring treatment enhanced the properties of PLT films. The charactcristics of the PLT filrris were investigated as a tunction of the flow rate of Ti-source. The PL'i' films were grown in a perovskite structure tvith (100) preferred orientation. The high X-ray diffraction intensity and dielectric constant were obtained from the stoichiometric perovskite $(Pb,La)TiO_3$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.4
• /
• pp.407-415
• /
• 2011

The stability condition and wideband characteristics of 3D ID-FDTD algorithm which has low dispersion error with isotropic dispersion are presented in this paper. 3D ID-FDTD method was proposed to improve the defect of the Yee FDTD such as the anisotropy and large dispersion error. The published paper calculated the stability condition of 3D ID-FDTD algorithm by using numerical method, however, it is thought that the examples were not sufficient to verify the stability condition. Thus, in this paper, various simulations are included in order to hold reliability under the conditions that the plane wave propagation is assumed with a single frequency and a wideband frequency. Also, the 3D ID-FDTD algorithm is compared to those that have the similar FDTD algorithm with ID-FDTD such as Forgy's method and non-standard FDTD method in a wideband. Finally, the radar cross section(RCS) for the large sphere with high dielectric constant is calculated.

• Korean Journal of Materials Research
• /
• v.27 no.1
• /
• pp.32-38
• /
• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.387-387
• /
• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.04a
• /
• pp.35-43
• /
• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.117-117
• /
• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2016.05a
• /
• pp.630-632
• /
• 2016

In this paper, we propose a modified rhombus slot UWB(Ultra Wide Band) antenna with fork-shaped feeding structure. The proposed modified rhombus slot structure is eliminated upper and lower part of the basic rhombus slot shape to get ultra-wideband characteristics for UWB communication. Also, feeding structure is used to fork-shaped structure to get ultra-wideband characteristics. The antenna is designed on an FR-4 substrate of which the dielectric constant is 4.4, and its overall size is $34mm(W1){\times}34mm(L1){\times}1mm(t)$, and its slot antenna size is $30mm(W2){\times}16.75mm(L3+L4)$. After the optimized process, the proposed antenna is fabricated and measured. Measured result. fabricated antenna satisfied -10 dB impedance bandwidth in UWB frequency band (3.1 ~ 10.6 GHz ). And measured results of gain and radiation patterns characteristics displayed determined for operating bands.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.2
• /
• pp.67-72
• /
• 2011

8-layer printed circuit board is designed and implemented for triple band(2.3/2.5/3.5GHz) m-WiMAX system. In order to maintain excellent RF performance, low dielectric constant material is used for implementation of the printed circuit board. Also, embedded printed circuit board which embed passive devices is manufactured to reduce total system area. As a result, total system area is cut off by 9%. Triple band m-WiMAX system is produced using embedded printed circuit board. Furthermore, internet connecting test is performed and proved successful running of the system. The developed embedded printed circuit board will provide a effective solution for system area reduction and low loss signal RF communication system.