• Title/Summary/Keyword: Dielectric ceramics

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Multiferroic Property and Crystal Structural Transition of BiFeO3-SrTiO3 Ceramics

  • Kim, A-Young;Han, Seung-Ho;Kim, Jeong-Seog;Cheon, Chae-Il
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.307-311
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    • 2011
  • Solid solutions of the (1-x)$BiFeO_3-xSrTiO_3$ ceramic system (x = 0~0.4) are explored here in attempts to obtain multiferroic properties in these systems. The polarization-electric field hysteresis, magnetization-magnetic field curves, and dielectric properties are also characterized. This solid-solution system shows a crystal structural transition from a noncentrosymmetric (R3c) structure to a centrosymmetric (Pm-3m) structure at 0.3 < x < 0.4. The solid solution ceramic shows unsaturated M-H behavior and low remanent magnetization over the composition region of 0.1 ${\leq}$ x ${\leq}$ 0.3. The $0.7BiFeO_3-0.3SrTiO_3$ system shows the largest value of $M_s$ at 0.17 emu/g and the smallest value of $H_c$ at 1.06 kOe. The P-E hysteresis curves were not saturated under an electric field as high as E = 70 kV/cm. This system is considered to have multiferroic characteristics in the composition range of 0.1 ${\leq}$ x ${\leq}$ 0.3.

Electrical Properties and Temperature Stability of Dysprosium and Erbium Co-doped Barium Titanate with Perovskite Structure for X7R MLCCs (Dysprosium과 Erbium이 동시 첨가된 X7R MLCC용 페로브스카이트 BaTiO3의 전기적특성과 온도안정성)

  • Noh, Tai-Min;Kim, Jin-Seong;Ryu, Ji-Seung;Lee, Hee-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.323-327
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    • 2011
  • The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

Impedance Spectroscopy Analysis of the Screen Printed Thick Films (스크린 프린트된 후막의 Impedance Spectroscopy 특성 분석)

  • Ham, Yong-Su;Moon, Sang-Ho;Nam, Song-Min;Lee, Young-Hie;Koh, Jung-Hyuk;Jyoung, Soon-Jong;Kim, Min-Soo;Cho, Kyung-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.477-480
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    • 2010
  • In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.

Dielectric and Piezoelectric Properties in Multilayer Ceramic Actuator (적층형 세라믹 액츄에이터의 유전 및 압전특성)

  • Choi, Hyeong-Bong;Jeong, Soon-Jong;Ha, Mun-Su;Koh, Jung-Hyuk;Lee, Dae-Su;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.615-618
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    • 2004
  • The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

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Effect of Sintering Temperature on Electrical Properties of $Pr_{6}O_{11}$-Based ZnO Varistors ($Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 성질에 소결온도의 영향)

  • 남춘우;류정선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.572-577
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    • 2001
  • The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

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Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il;Lee, Bong-Yeon;Kim, Jeong-Seog;Bang, Kyu-Seok;Kim, Jun-Chul;Lee, Hyeung-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.20-23
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    • 2003
  • Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

Effect of $B_2O_3$ on the Microstructure and the Microwave Dielectric Properties of the $Ba(Mg_{1/3}Ta_{2/3})O_3$ Ceramics ($Ba(Mg_{1/3}Ta_{2/3})O_3$ 세라믹의 미세구조 및 고주파 유전 특성에 대한 $B_2O_3$의 영향)

  • Kim, Beom-Jong;Kim, Mi-Han;Lee, Woo-Sung;Park, Jong-Chul;Lee, Hwak-Joo;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.772-775
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    • 2004
  • 본 논문에서는 $B_2O_3$ 첨가가 Ba$(Mg_{1/3}Ta_{2/3})O_3$ (BMT)의 유전특성 및 미세구조의 변화에 미치는 영향에 대해 연구하였다 $B_2O_3$가 소량 첨가되었을 때는 결정립의 성장을 야기하여 치밀한 미세구조를 보였지만, 다량이 첨가된 경우 비정상 결정립 성장을 야기하여 치밀화가 떨어지는 미세구조를 보임과 동시에 $Ba_3Ta_5O_{15}$의 2차상을 형성했다. 이는 소량의 $B_2O_3$ 첨가가 유전특성의 향상을 가져왔지만, 다량의 첨가는 오히려 특성의 악화를 가져온 결과의 원인이라 생각된다. 0.5mol%의 $B_2O_3$를 첨가하여 $1500^{\circ}C$에서 6시간 소결한 경우 ${{\varepsilon}_r}=24$, $Q{\times}f=210,000GHz$의 유전 특성 값과 $4.74ppm/^{\circ}C$$T_{cf}$ 값을 얻었다.

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The Effects of $Ta_2O_5$ on Microstructure and Dielectric Properties of $B_a(Zn_{1/3}Ta_{2/3})O_3$ Ceramics. ($Ta_2O_5$ 첨가가 $Ba(Zn_{1/3}Ta_{2/3})O_3$ 세라믹의 미세구조와 유전특성에 미치는 영향)

  • Jeong, Young-Hun;Kim, Min-Han;Son, Jin-Ok;Nahm, Sahn;Park, Jong-Cheol;Kang, Nam-Kee;Lee, Hwack-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.639-643
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    • 2004
  • [ $Ta_2O_5$ ]가 첨가된 $Ba(Zn_{1/3}Ta_{2/3})O_3$[BZT] 세라믹은 1:2 규칙화 정도가 증가하고 $Ba_3Ta_5O_{15}의 이차상이 새롭게 형성된다. $1580^{\circ}C$ 보다 높은 온도에서 소결된 BZT 세라믹은 $Ta_2O_5$를 첨가하면 입자의 성장이 일어나고 액상이 형성된다. 품질계수(Q) 값은 $1580^{\circ}C$ 보다 높은 온도에서 소결할 경우 미량의 $Ta_2O_5$ 첨가만으로도 상당히 증가한다. 상대밀도는 $Ta_2O_5$ 첨가량에 따라 감소하기 때문에 Q값의 증가는 상대밀도와는 무관하다. 반면에, $Ta_2O_5$의 첨가량에 따라 입자의 성장은 증가하였기 때문에 Q값의 향상은 입자크기와 관계가 있음을 알 수 있다. 많은 양의 $Ta_2O_5$ 첨가시 비록 입자 크기가 증가했음에도 불구하고 Q값이 매우 낮은 것을 볼 때, Q값의 감소는 $Ba_3Ta_5O_{15}$ 상의 영향과 낮은 밀도 값에 기인한 것이다.

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Fabrication of Ceramic 3D Integration Technology for Ink-jet Printing (Ink-jet Printing을 이용한 3D-Integration 구현)

  • Hwang, Myung-Sung;Kim, Ji-Hoon;Kim, Hyo-Tae;Yoon, Young-Joon;Kim, Jong-Hee;Moon, Joo-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.332-332
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    • 2010
  • We have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed $Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed $Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed $Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed $Al_2O_3$ film is also measured to be over 300 at 1MHz.

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Eco-friendly Ceramic Materials for Shear Mode Piezoelectric Energy Harvesting (전단 모드 압전 에너지 하베스팅용 친환경 세라믹 소재)

  • Han, Seung-Ho;Park, Hwi-Yeol;Kang, Hyung-Won;Lee, Hyeung-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.9
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    • pp.702-710
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    • 2012
  • Eco-friendly $(Na,K)NbO_3$ (NKN)-based piezoelectric ceramic materials were fabricated by conventional ceramic method for shear mode piezoelectric energy harvesting application. $NKN-LiTaO_3$ (LT) based compositions were adopted for the high $d_{15}{\times}g_{15}$ which is proportional to harvested energy density. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065LiTaO_3$ was found to be lie on the boundary of tetragonal and orthorhombic phases. With reducing Ta content, the dielectric constant decreased gradually while maintaining high $d_{15}$, which resulted in increased $d_{15}{\times}g_{15}$. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065Li(Nb_{0.990}Ta_{0.010})O_3$ was found to possess excellent piezoelectric and electromechanical properties ($d_{15}{\times}g_{15}=29\;pm^2/N$, $d_{15}$ = 417 pC/N, $k_{15}$ = 0.55), and high curie temperature ($T_c=455^{\circ}C$).