• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.81-84
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• 1998

New diagnostic techniques have been tried on the applications of chemical, physical and micro-structural methods because there was a limit to diagnose degradation in Korean Underground Residential Distribution (URD) power cables with the conventional electrical methods. In this study, non-electrical properties were carried out as such. Characterization of interface layer was analyzed by X-ray, characterization of insulator by water tree, degree of crosslinking, shrinkage as well as ${\mu}$ -FTIR, characterization of semiconductive layer by volume resistivity. Electrical properties were also performed by leakage current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• Journal of the Korean Ceramic Society
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• v.45 no.10
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• pp.631-637
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• 2008

Self-standing mesoporous bioactive glass/poly($\varepsilon$-caprolactone) composite thin films with good molding capability, bioactivity, and biocompatibility in vitro, which may find potential applications in tissue engineering and drug storage, were prepared using a combination of the sol-gel, polymer templating, and water casting method. The thickness of self-standing films was affected by the difference of dielectric constant between distilled water and organic solvent.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06a
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• pp.161-166
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• 2006

A new fiber orientation sensor has been developed and tested on an actual paper machine to demonstrate its capability to function as a real-time monitoring system. First, we demonstrate the ability of the sensor system to detect the change in the fiber orientation angle while the sensor head, and not the paper, was intentionally rotated from $-90^{\circ}\;to\;+70^{\circ}$ with respect to the paper-traveling direction. Next, we demonstrate that this system can successfully detect the change in the magnitude and angle of fiber orientation in running paper when the direction of material flow on the wire was changed on the paper machine. The angle and magnitude of fiber orientation were independently confirmed by SST and MOA measurements. Furthermore, we found that the system was capable of measuring the basis weight and the moisture content of running paper while detecting the angle and magnitude of fiber orientation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• Smart Structures and Systems
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• v.6 no.9
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• pp.1007-1023
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• 2010

This paper describes the development and evaluation of an innovative TDR distributed moisture sensor. This sensor features advantages of being responsive to the spatial variations of the soil moisture content. The geometry design of the sensor makes it rugged for field installation. Good linear calibration is obtained between the sensor measured dielectric constant and soil physical properties. Simulations by the finite element method (FEM) are conducted to assist the design of this sensor and to determine the effective sampling range. Compared with conventional types of moisture sensor, which only makes point measurement, this sensor possesses distributed moisture sensing capability. This new sensor is not only easy to install, but also measures moisture distribution with much lower cost. This new sensor holds promise to significantly improve the current field instruments. It will be a useful tool to help study the influence of a variety of moisture-related phenomena on infrastructure performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Elastomers and Composites
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• v.58 no.4
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• pp.173-178
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• 2023

Recently, there has been a significant focus on the development of flexible and stretchable sensors, driven by advancements in electronic devices and the robotics industry. Among these sensors, tactile sensors stand out as the most actively researched, playing a crucial role in facilitating interaction between humans and electronic devices, particularly in robotics and medical applications. This study specifically involves the manufacturing of a capacitive tactile sensor using a relatively straightforward process and sensor structure. Natural rubber and Nitrile butadiene rubber, commonly employed in the rubber industry, were utilized. The dielectric material in the manufactured tactile sensor possesses a porous structure. Notably, the resulting tactile sensor demonstrated excellent sensitivity, approximately 1%/kPa, and exhibited the capability to detect pressures up to 212 kPa.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.142-149
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• 2010

This paper describes dielectric characteristics of $SF_6$ and dry-air gases under lightning impulse voltages in a quasi-uniform electric field. In order to simulate to a quasi-uniform electric field, electric field utilization factor of the used sphere-plane electrode is 71[%]. The gas pressure of $SF_6$ ranges from 0.1 to 0.2[MPa] and that of dry-air ranges from 0.2 to 0.6[MPa]. Electrical breakdown voltages of $SF_6$ and dry-air gases are measured and analyzed as functions of the polarity of lightning impulse voltage and gas pressure. As a result, the electrical breakdown voltage of both gases under the positive lightning impulse voltage is higher than that under the negative one. The electrical breakdown voltage in $SF_6$ is almost higher than 2.67 times compared to dry-air. The results presented in this paper can be used as a useful information to evaluate the capability of alternative insulation gases for $SF_6$ in power distribution equipment with prominent ability against lightning surge.