• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.8
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• pp.1560-1565
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• 2011

The environmental pollution caused by green-house gases such as $CO_2$ and $SF_6$ has been becoming the main issue of industrial society. Many developed countries are making efforts to minimize the amount of $CO_2$ emission come from the operation of high voltage electrical apparatuses. As a part of these efforts, 180 countries signed the Kyoto Protocol in 1997 to cut back on their green-house gas emissions. Nowadays, the study on the development of dry air insulated switchgear (DAIS) which is known as an eco-friendly electrical apparatus is in progress. A DAIS is advantageous for minimizing the effect of impurities and enhancing the dielectric characteristics over an air insulated switchgear (AIS) by applying constant pressure to an enclosed cubicle. Therefore, a study on the electrical insulation performance of dry air as a gaseous insulation medium is conducted in this paper to substitute a gas insulated switchgear (GIS) for DAIS. As results, it is verified that the AC dielectric characteristics of dry air are similar to those of air and the lightning impulse dielectric characteristics of dry air are superior to those of air at 1bar pressure condition. However, dry air is of inferior dielectric characteristics to $SF_6$ at 4bar pressure condition. Finally, it is suggested that the internal pressure of DAIS should be over 4bar pressure to develop a high voltage switchgear which has similar electrical performance to a conventional GIS. Also, the empirical formulae on calculating the maximum electric field intensity at sparkover of dry air are deduced by experiments according to pressures. It is expected that these results are helpful to design and develop a high voltage electrical apparatus.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.364-366
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• 1989

In this paper, the electrical conduction phenomena of oriented polypropylene film were studied. Especially, as for the range of negative characteristics, it is observed that as increasing ambient temperature, the characteristics are shifted gradually towards the low intensity side of applied field with the decreasing width of the range as well as the fact that the currant oscillation takes place at the both transition points of the characteristics and that the point at the place the dielectric breakdown, occurs. Finally, it is also suggestive that the oscillation characteristics observed on the negative resistance range of the biaxially oriented specimen show the possibility to utilize it as active element materials.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.2
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• pp.175-182
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• 1990

In order to investigate the conduction characteistics of the biaxially oriented polypropylene film, several measurements have been carried out in the range of temperature between 5['c] and 25['c] as well as the field intensity between 10[MV/m] and 300[MV/m]. The whole range of the characteristics observed at 15['c] appears to be divided into five regions` the Ohmic conduction region due to ionic carrier below 40[MV/m], the region from 40[MV/m] to 70[MV/m] in which the conduction mechanism is attributed to Poole-Frenkel effect, the region from 70[MV/m] to 82[MV/m] in which the negative resistance characteristics are observed, then the region from 82[MV/m] which is dominated by Schottky effect and finally, the region from 240[MV/m] up to the point where dielectric breakdown occurs in which the mechanism is based on Flowler-Nordheim theory.