• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.147-150
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• 1988

Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin $SiO_2$ film is required to fabricate a small-geometry MOS device. In the present study we have attempted to eliminate the failure-causing defects that develop in thin oxide films during the oxidation step by performing a long-time preoxidation and postoxidation annealing. The TDDB test and the copper decoration method were used to calculate the oxide defects density of MOS device. The dielectric reliability of high-quality thin oxides have been studied by using the time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric -breakdown (Constant-stressed I-V) tests. Failure times against temperature and electric field are examined and acceleration factors are abtained for each parameter. Based on the data obtained, breakdown wearout limitation for thin oxide films is estimated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.235-238
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• 1996

In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through from the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance ㅐf the breakdown strength was higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.605-608
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• 2001

With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of $20\sim100[^{\circ}C]$, we are made researches AC breakdown in the gap of $500\sim2500[{\mu}m]$. The classification for the physical properties of oil for oil-immersed transformer by FTIR and H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to $90[^{\circ}C]$ but decreased over $90[^{\circ}C]$ in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1649-1651
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• 2001

The effect of ribbed spacers having metallic particle attached to the post-type spacer on dielectric breakdown phenomena has been investigated using electric field analysis for imaginary streamer process and a breakdown experiment. It was described that the electric field analysis and the dielectric breakdown test were performed on the case that the particle was attached to the various position of the ribbed spacer having various shapes. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.232-235
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• 2003

To realize the development of HTS power apparatus, various breakdown test of L$N_2$ should be carried out and the mechanism should be understood more. Moreover the dielectric design technology that the basic dielectric experimental data applied to the HTS power system should be developed. In this paper, the electric fields for the insulation design were calculated for example with the analysis of Weibull distribution. And V-t characteristics of L$N_2$ were discussed. Around the breakdown voltage the n values were less than 1.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.79-79
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• 2010

In this paper, we present results of the dielectric breakdown test in various 6.9kV power cables used in power plants. The dielectric strength of the different conditioned cables was measured by placing the sliced cable sections in silicone oil bath with needle electrode. The results were analyzed by the Weibull distribution. The shape and scale parameters of the Weibull distribution for each cable sections under test were calculated and evaluated. Collected data base was applied to deterioration trend analysis and lifetime guide was also proposed.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.217-223
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• 1995

In this paper, we investigated physical properties and electrical characteristics of the fluorocarbon that used as coolants for large power gas-insulated transformer. Volume resistivity of the fluorocarbon was .rho.=1.87*10$^{15}$ [.ohm.cm] at 1 atm, 27.deg. C. Dielectric constant was 1.86 and decreases as temperature increase. The breakdown voltage at 1 atm was higher than that of transformer oil. The breakdown voltage of fluorocarbon vapor was about 18kV when pressure in a test chamber increases over lkg/cm$^{2}$. When fluorocarbon was mixed with SF$_{6}$ gas, breakdown voltage of the mixed was higher than that of fluorocarbon. Then fluorocarbon leads to increase over 4kg/cm$^{2}$ in pressure as temperature increase. Therefore, when a gas-insulated transformer is manufactured, the design must be taken into consideration a high-pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.