• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.177-180
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• 1999

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp(FFL) with High Luminance for LCD Backlighting. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. There are two influences of Electric field on different dielectric thickness. The Electric field difference at the dielectric layer itself enhances minimum value of firing voltage and luminance uniformity. So, we measured the Electric filed at 0.5mm, 1mm gap length and discharge voltage for difference dielectric layer thickness. In experiment result, the thicker dielectric layer has higher firing voltage and lower current.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2011

Effects of particle size, crystal structures and multilayer structures of $ATiO_3$, $ATa_2O_6$, $ANb_2O_6$, $AWO_4$, and $AMoO_4$ (A=Ni, Mg, Zn, Co) ceramic fillers on the dielectric properties of polystyrene (PS), polypropylene (PP) and polytetrafluoroethylene (PTFE) polymer matrices were investigated at microwave frequencies. The microwave dielectric properties of $ATiO_3$ (ilmenite), $ATa_2O_6$ (tri-rutile), $ANb_2O_6$ (columbite), AWO4 (wolframite), and AMoO4 (wolframite) ceramics were largely dependent on the structural characteristics of oxygen octahedra. The dielectric constant (K) of the composites was increased with the ceramic content. However, the dielectric loss (tan ${\delta}$) of the composites was affected by the type of ceramics and the crystallinity of polymers. For the composites with same amount of ceramics, the K was decreased and the tan ${\delta}$ was increased with the particle size of ceramics. Also, the dielectric properties of the composites were dependent on the multilayer structures with different arrangements. Several theoretical models have been employed to predict the effective dielectric properties of the composites. The frequency dependence of dielectric properties and the temperature coefficient of resonant frequency (TCF) of the composites were also discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국전자파학회논문지
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• 제18권3호
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• pp.323-333
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• 2007

본 논문에서는 구형 빔 패턴을 효율적으로 형성하기 위한 새로운 MDAS-DR 안테나 구조를 제안하였다. 안테나 구조는 크게 스택 마이크로스트립 패치 여기 소자, 다층 원형 도체 배열 소자들과 그 주위를 에워싸고 있는 유전체 링으로 구성된다. 다층 원형 도체 배열 구조는 스택 마이크로스트립 패치 여기 소자에 의해 방사 전력을 공급 받아 그 주변의 유전체 링과의 전기적 상호 결합 작용에 의해 원거리에서 구형 빔 방사 패턴을 형성할 수 있다. 유전체 링 구조의 설계 변수는 다층 원형 도체 배열 구조의 설계 변수와 더불어 구형 빔 패턴 형성에 중요한 설계 변수들로서 구형 빔 안테나를 위해 12개의 다층 원형 도체 배열과 유전율이 2.05인 테프론 유전체가 사용되었다. 제안된 안테나 구조의 유효성을 검증하기 위하여 10 GHz 대역$(9.6\sim10.4\;GHz)$에서 동작하는 안테 나를 설계하였으며, 시뮬레이션에는 삼차원 안테나 구조 해석에 적합한 상용 CST Microwave $Studio^{TM}$ 시뮬레이터가 사용되었다. 또한, 안테나 시제품을 제작한 후 무반사실 안테나 챔버에서 전기적 특성들을 측정하였다. 구형 빔 패턴 형성을 갖는 안테나 시제품의 측정 결과들은 시뮬레이션 결과들과 잘 일치하였으며, 측정 결과들로부터 MDAS-DR 안테나의 10 GHz에서의 측정 이득은 11.18 dBi이었으며, 최소한 8.0 % 대역 폭 내에서 약 $40^{\circ}$의 양호한 구형 빔 패턴을 형성함을 확인할 수 있었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.119-123
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• 2001

In this paper, a new structure and fabrication method for the wafer level package(WLP) is presented. A packaged VLSI chip is encapsulated by a parylene(which is a low k material) layer as a dielectric layer and is molded by SUB photo-epoxy with dielectric constant of 3.0 at 100 MHz. The electrical parameters (R, L, C) of package traces are extracted by using the Maxwell 3-D simulator. Based on HSPICE simulation results, the proposed wafer level package can operate for frequencies up to 20GHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.49-52
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• 1998

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, it was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.894-896
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• 2001

The Polypropylene films which are made by refinement of its pellet and formed as crystals are exposed to Radiation. As the results, degradation effects were observed in non-crystalline regions. It is thus considered that the effects occur by destroying of lattice binding force by Radiation. The distribution of degradation was increased with irradiation quantities of Radiation and dielectric constant of Polypropylene sheets irradiated Radiation was rapidly increased from above 10 MHz.

• 한국결정성장학회지
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• 제17권5호
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• pp.217-222
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• 2007

[ $(1-x)CaWO_4-xYNbO_4$ ]계에 대하여 $YNbO_4(0.05{\leq}x{\leq}0.4)$의 치환량 변화에 따른 마이크로파 유전특성을 고찰하였다. x=0.10 조성까지 정방정(tetragonal) scheelite 구조의 $CaWO_4$ 단일상이 확인되었고, 그 이상 첨가 시 fergusonite 구조의 2차상이 증가하였다. $YNbO_4$ 첨가량이 증가할수록 겉보기 밀도는 감소하였는데, 이는 $CaWO_4(6.117g/cm^3)$보다 $YNbO_4(5.581g/cm^3)$가 더 낮은 이론밀도 값을 갖기 때문이다. $YNbO_4$의 첨가량이 증가함에 따라 유전상수(K)와 품질계수(Qf)는 2차상의 증가와 밀도의 감소로 인해 감소하는 경향을 보였고, $YNbO_4$ 치환량에 따른 소결시편의 공진주파수 온도계수(TCF)의 변화는 존재상의 유전체 혼합 법칙(dielectric mixing rule)에 의존하였다.