• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.2
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• pp.83-87
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• 1984

Influence of the metallization during the manufacturing of the ceramic multilayer capacitor on the dielectric properties was studied as a change of the capacity and the dissipation factor. Due to the change of the relative dielectric constant as a function of the measuring temperature the influence of the metallization could be obtained and the change of the dissipation factor as a function of the measuring frequency was anaysed. In order to investigate the boundary effect between the metallization and the dielectric a kind of microstructure model at the internal Grain and Grain Boundary was constructed and tried to analyse the change of the dielectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.45-53
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• 1997

The purpose of this paper is to evaluate FRP rod for aging, which exposed to salt water and pure at elevated temperature. Dielectric constant and tan .delta. on time and frequency domain were tested to observe how rapidly the FRP rod aged. Dielectric constants of FRP rods with treating time were slightly increased. That of FRP rods with frequency, However, showed strongly the effects of large relaxation time estimated from interfacial polarization a or ionic. It is obvious that absorbed water affects to dielectric and electric properties of FRP with increasing the treating time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.296-297
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• 2006

A conventional oxide method was used to fabricate $Ba_{0.5}Sr_{0.5}TiO_3$(BST) ceramic plates doped by MgO from 10 to 60 wt%. The structural and dielectric properties of BST were investigated as a fraction of MgO dopant concentration. The dielectric properties of the MgO doped BST were strongly dependent on the MgO contents. The dielectric constant and dielectric loss of MgO doped BST decreased with increasing MgO content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.916-921
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• 2012

This research measured the dielectric properties of silicone rubber with various hardness in 100 Hz~3 MHz, $30{\sim}170^{\circ}C$ conditions. When the hardness increases from 65 degree to 75 degree, the dielectric loss increased within frequency range of 100 kHz~3 MHz and was a little change in dielectric loss within temperature range of $90^{\circ}C{\sim}170^{\circ}C$. Thermogravimetric Analysis (TGA) showed the weight change rate increased a little while heated until $800^{\circ}C$. Scanning Electron Microscope (SEM) measurement showed that Aluminium Trihydroxide($AlOH_3$) which acts as a reinforcement agent reduced the size of the particles as the hardness increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.345-348
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• 1999

The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.267-271
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• 1995

The electrical properties of (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ ceramics were studied. Specimens were prepared by the conventional mixed oxide method, and fired between 1300[.deg. C] - 1375[.deg. C], for 2[hr.]. The electrical and structural preperties of specimens were investigated with sintering temperature. Increasing the sintering temperature from 1300[.deg. C] to 1375[.deg. C], average grain size was increased from 2.61[.mu.m] to 4.53[.mu.m]. (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ specimen sintered at 1350[.deg. C] for two hours showed good dielectric constant(2147) and dielectric loss(1.7[%]) properties at 1[khz]. Sintered density and breakdown field strength were the highest value of 5.75[g/c $m^{3}$], 20[kV/cm], respectively. Dielectric properties with applied voltage were independent of the sintering temperature.temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.547-549
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• 2001

The dielectric constants and dielectric losses of ZrTiO$_4$thin films deposited by DC magnetron reactive sputtering were investigated. The paraelectric properties were measured in the 100kHz range. As the deposition temperature increased (up to 67$0^{\circ}C$), the dielectric losses (tan$\delta$) decreased (down to 0.017$\pm$0.007), while the dielectric constants ($\varepsilon$) were in the range of 35$\pm$7. Post annealing at 80$0^{\circ}C$ in oxygen for 2h reduced tan$\delta$ down to 0.005$\pm$0.001, higher than those of well-sintered bulk ZrTiO$_4$.