• Title/Summary/Keyword: Dielectric Materials

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Dry Etching of $Al_2O_3$ Thin Film in Inductively Coupled Plasma

  • Xue, Yang;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.67-67
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    • 2009
  • Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

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Design and SAR Analysis of Wearable Antenna on Various Parts of Human Body, Using Conventional and Artificial Ground Planes

  • Ali, Usman;Ullah, Sadiq;Khan, Jalal;Shafi, Muhammad;Kamal, Babar;Basir, Abdul;Flint, James A;Seager, Rob D.
    • Journal of Electrical Engineering and Technology
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    • v.12 no.1
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    • pp.317-328
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    • 2017
  • This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.

Dual-wide-band absorber of truncated-cone structure, based on metamaterial

  • Kim, Y.J.;Yoo, Y.J.;Rhee, J.Y.;Kim, K.W.;Park, S.Y.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.235.1-235.1
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    • 2015
  • Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

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LiNbO3 integrated optic devices with an UV-curable polymer buffer layer

  • Jeong, Woon-Jo;Kim, Seong-Ku;Park, Gye-Choon;Lee, Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.111-118
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    • 2002
  • A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

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Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer

  • Noda, Minoru;Kodama, Kazushi;Kitai, Satoshi;Takahashi, Mitsue;Kanashima, Takeshi;Okuyama, Masanori
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.1-64
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    • 2003
  • A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.

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Development of Ultrasonic Pulse Compression Using Golay Codes (Golay 코드를 사용한 초음파펄스압축법 개발)

  • Kim, Young-H.;Kim, Young-Gil;Jeong, Peter
    • Journal of the Korean Society for Nondestructive Testing
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    • v.14 no.3
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    • pp.185-193
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    • 1994
  • Conventional ultrasonic flaw detection system uses a large amplitude narrow pulse to excite a transducer. However, these systems are limited in pulse energy. An excessively large amplitude causes a dielectric breakage of the transducer, and an excessively long pulse causes decrease of the resolution. Using the pulse compression, a long pulse of pseudorandom signal can be used without sacrificing resolution by signal correlation. In the present work, the pulse compression technique was implemented into an ultrasonic system. Golay code was used as a pseudorandom signal in this system, since pair sum of autocorrelations has no sidelobe. The equivalent input pulse of the Golay code was derived to analyze the pulse compression system. Throughout the experiment, the pulse compression technique has demonstrated for its improved SNR(signal to noise ratio) by reducing the system's white noise. And the experimental data also indicated that the SNR enhancement was propotional to the square root of the code length used. The technique seems to perform particularly well with highly energy-absorbent materials such as polymers, plastics and rubbers.

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Low Temperature Synthesis of the Microwave Dielectric (Pb0.5Ca0.5)(Fe0.5Nb0.5)O3 Nano Powders by the Metal-citrate Process (Metal-citrate Process를 이용한 마이크로파 유전체용 (Pb0.5Ca0.5)(Fe0.5Nb0.5)O3 나노 분말의 저온 합성)

  • Lee, Dong-Wook;Won, Jong-Han;Shim, Kwang-Bo;Kang, Seung-Gu;Hyun, Boo-Sung
    • Journal of the Korean Ceramic Society
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    • v.39 no.11
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    • pp.1113-1118
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    • 2002
  • Nano sized $(Pb_{0.5}Ca_{0.5})(Fe_{0.5}Nb_{0.5})O_3$ (PCFN) powders with the stoichiometric composition and the uniform size distribution were successfully synthesized by the metal-citrate process through the calcination of the polymeric precursor which consisted of the metal ions and the organic network. The crystallization of the initial amorphous powders began at $400{\circ}$ and completed at $700{\circ}$. The pyrochlore phase was detected caused by the dissociation of PbO above $900{\circ}$. Single phase perovskite PCFN powders with 40 nm size and uniform shape were obtained through the calcination at $700{\circ}$.

Terahertz Time Domain Spectroscopy, T-Ray Imaging and Wireless Data Transfer Technologies

  • Paek, Mun-Cheol;Kwak, Min-Hwan;Kang, Seung-Beom;Kim, Sung-Il;Ryu, Han-Cheol;Choi, Sang-Kuk;Jeong, Se-Young;Kang, Dae-Won;Jun, Dong-Suk;Kang, Kwang-Yong
    • Journal of electromagnetic engineering and science
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    • v.10 no.3
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    • pp.158-165
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    • 2010
  • This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

Wide Bandwidth RFID Tag Antenna Design for Protection of Connection Part between Chip and Antenna (칩과 안테나 사이 연결부 보호를 위한 RFID 태그 안테나의 광대역 설계)

  • Lee, Ji-Chul;Min, Kyeong-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.2
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    • pp.154-160
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    • 2009
  • This paper describes a wide bandwidth RFID tag antenna design for protection of connection part between chip and antenna. A proposed tag antenna size, a resonant frequency and bandwidth are $53{\times}10{\times}1\;mm$, 900 MHz and 800 MHz($500{\sim}1,300\;MHz$) at -10 dB below, respectively. The dielectric materials with different relative permittivity such as polyethylene, glass and silicon were applied for protection of connection part between the proposed antenna and chip on the way of whole and partial housing. The measured return loss and radiation pattern agreed well with the calculation results. The read range of the proposed tag antenna without any housing and of tag antenna with housing covered over all by silicon with 3 mm thickness were observed about 5 m and 4 m, respectively.

Study on Design and Performance of Microwave Absorbers of Carbon Nanotube Composite Laminates (탄소나노튜브 복합재 적층판을 활용한 전파흡수체의 설계 및 성능에 대한 연구)

  • Kim, Jin-Bong;Kim, Chun-Gon
    • Composites Research
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    • v.24 no.2
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    • pp.38-45
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    • 2011
  • In this paper, we present an optimization method for the single Dallenbach-layer type microwave absorbers composed of E-glass fabric/epoxy composite laminates. The composite prepreg containing carbon nanotubes (CNT) was used to control the electrical property of the composites laminates. The design technology using the genetic algorithm was used to get the optimal thicknesses of the laminates and the filler contents at various center frequencies, for which the numerical model of the complex permittivity of the composite laminate was incorporated. In the optimal design results, the content of CNT increased in proportion to the center frequency, but, on the contrary, the thickness of the microwave absorbers decreased. The permittivity and reflection loss are measured using vector network analyzer and 7 mm coaxial airline. The influence of the mismatches in between measurement and prediction of the thickness and the complex permittivity caused the shift of the center frequency, blunting of the peak at the center frequency and the reduction of the absorbing bandwidth.