• Korean Journal of Materials Research
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• v.19 no.4
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.560-565
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• 2008

$(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.363-369
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• 2002

We have designed conductive transparent filters using a low-emissivity coating such as [dielectric|Ag|dielectric] for display applications. The design is the repetition of [$TiO_{2}$|Ti|Ag |$TiO_{2}$] to increase the transmittance in the visible and decrease the transmittance in the near IR. The conductive transparent filters are deposited by a radio frequency(RF) magnetron sputtering system. The optical, structural and electrical properties of the filters were investigated and the optical spectra are compared with simulated spectra. The thickness of the deposited Ag films is above 13 ㎚ to increase the conductivity and that of $TiO_{2}$ films is 24 ㎚ to increase the transmittance in the visible range. Ti blockers are employed to prevent the Ag films from being oxidized by an oxygen gas during the reactive sputtering process. Also, it is shown that the thicker Ti film is necessary as the period increases. Finally, a filter with repetition of the basic structure three times shows the better cut-off near infrared(NIR) and the sheet resistance as low as 2Ω/□ which is enough to shield an unnecessary electromagnetic waves for a display panel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.885-894
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• 2015

In this paper, it can be applied to a walkie-talkie, the RFID / USN 920 MHz band(917~923.5 MHz) and WiFi 2.4GHz band(2.4~2.483 5GHz) return loss is 10 dB over the band, on-board dual band with omni-directional radiation characteristics is proposed. The basic structure designed antenna is used meander monopole antenna. It was used as double stubs and tabs for antenna designs that meet the criteria proposed. The double stub and the tab affects the reactance of the antenna to form a common-mode and differential-mode in the stub to improve the antenna characteristics and return loss in the bandwidth, gain and radiation characteristics. The system size of walkie-talkie is $52{\times}77mm^2$, the size of the antenna is limited to $52{\times}15mm^2$, the thickness of FR4 dielectric substrate is 0.8 mm, FR4 dielectric constant 4.4 is used. For experimental results, the return loss is measured more than 10 dB, the maximum gain is measured 1.95 dB, the maximum bandwidth is measured 360 MHz, the radiation characteristic is measured omni-directional. By a walkie-talkie terminal design applying the results of the paper, the handset's price competitiveness and production efficiency can be improved.

• Applied Chemistry for Engineering
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• v.5 no.5
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• pp.862-870
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• 1994

$Pb(NO_3)_2$, $Mg(NO_3)_2$ and $NbCl_5$ were used as starting materials and made into solutions. For $Pb(Mg_{1/3}Nb_{2/3})O_3$ composition, each solution measured was mixed and heated to $70^{\circ}C$ to resolved $PbCl_2$ precipitated at lower temperature coprecipitates were formed by adding oxine and ammonia gas under pH ranging 8 to 10, and the prepared coprecipitates were filtered and washed by distilled water. The $Pb(Mg_{1/3}Nb_{2/3})O_3$ powders were synthesized by calcination of coprecipitates at the temperature range of $700^{\circ}C$ to $1000^{\circ}C$, for 5hr. The average particle size of the synthesized powders showing spherical shape was $0.3{{\mu}m}$. The powders were formed to make pellets under pressure of $2000Kg/cm^2$, and the formed pellets were sintered at the temperature range of 1100 to $1200^{\circ}C$, for 5hr. The speciman sintered at $1200^{\circ}C$ showed theoretical density of 97.4%, dielectric constatnt of 17000 at 1kHz, and dielectric loss of 0.02% at 1kHz

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.391-398
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• 1996

In order to understand the electrostrictive behavior of Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) solid solutions the dielectric constants and the electric-field-induced strains in (1-x)PMN-xPT (x=0.0-0.4) were investigated in the temperature range -5$0^{\circ}C$-20$0^{\circ}C$. Powder of (1-x)Pb(Mg2/3Nb2/3)O3-xPbTiO3 (x=0.0, 0.1, 0.2, 0.3, 0.35, and 0.4) were prepared from the oxide forms of Pb, Mg, Nb and Ti via a columbite precursor method As the amount of PbTiO3 increases the temperature of maximum dielectric constant(T$\varepsilon$max) increases and the phase transition become less diffusive. The strain maximum occurs only when the diffuse phase transition occurs from rhombohedral to cubic or rhombohedral to tetragonal as in x=0.1-0.35 The strains monotonically decrease with temperature in the materials in which phase transition occurs from tetragonal to cubic as in x=0.4.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.194-201
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• 2010

We propose a frequency selective surface(FSS) using double split ring resonators(DSRRs) for isolation enhancement between CDMA and RFID. The structure consists of an outer SRR and an inner SRR, and the gaps are formed in the same direction. By properly adjusting the gap and line width, the resonant frequency and skirt characteristics can be adjusted without varying the unit cell size. The proposed structure has a different field distribution from that of an ordinary SRR for magneto-dielectric materials. One layer consists of $9{\times}9$ unit cells and the other layer was separated by 50 mm. To validate the simulation results, we fabricated the patch antenna and the FSSs, and the measured results show a good agreement with the simulated ones. The electrical size of the unit cell is $0.110\;{\lambda}{\times}0.110\;{\lambda}{\times}0.002\;{\lambda}$, and the size of the two layer FSS is $1.058\;{\lambda}{\times}1.058\;{\lambda}{\times}0.153\;{\lambda}$. The two layer FSS maintain gain in CDMA frequency and has 6.9 dB reduced gain in RFID frequency.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.22-27
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• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol.