• 설비공학논문집
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• 제11권4호
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• pp.528-536
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• 1999

This work studies the effects of transient reflectance on the thermal responses of a metal(gold) thin-film during ultrashort laser heating. The heating process is calculated using the conventional conduction model (parabolic one-step: POS), parabolic two-step model (PTS) with and without variable properties, hyperbolic two-step model (HTS). Results from the HTS model are very similar to those from the PTS model, since the laser heating time in this study is greater than the electron relaxation time. PTS model with variable properties, however, results in totally different temperature profiles compared to those from POS models or calculation with constant properties. Transient reflectances are estimated from electron temperature distributions and based on the linear relationship between the electron temperature and complex dielectric constants. Reflectance of the front surface can be changed with respect to dielectric constants, while those of the rear surface remain unchanged.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1627-1629
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• 1996

Polyvinylidene fluoride( : PVDF) has piezoelectric and pyroelectric. The ${\beta}-PVDF$ manufactured by induced-electric field. In accordance to increasing induced-electric field, the 530 $cm^{-1}$ peak decrease, whereas $510cm^{-1}$ peak increase. The dielectric constant of PVDF thin film is 6.8 and 10 MV/m induced-PVDF thin film is 9.4. The dielectric relaxation characteristic of PVDF thin films correspond to Debye's theory.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.258-260
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• 1996

We fabricated MIM device using copolymer LB films of $C_{18}MA-VE_2$. Electric and dielectric properties of MIM device were investigated. In our experimental results, the thickness of maleate copolymer LB film by elipsometry measurements was about $27{\sim}30[\AA]$. Conductivity was found to be $10^{+15}{\sim}10^{-14}[S/cm]$. The maleate copolymer LB film have the property of insulator like organic ultra-thin film. Frequency-dependent dielectric properties was orientational polarization by the dipole.

• Macromolecular Research
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• 제15권3호
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• pp.211-215
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• 2007

Hybrid thin film nanostructures composed of metal nanoparticles (NPs) and self-assembled polymer films with different spatial distributions of NPs were analyzed by optical waveguide spectroscopy (OWS). Specifically, the dielectric constants were calculated using effective medium theory for the incorporation of 1 vol% Au NP into the block copolymer (BCP) films having a cylindrical nanodomain morphology. Three cases were considered: uniform distribution of NPs in the film; selective distribution of NPs only in the cylindrical domains; and segregation of NPs to the center of the cylindrical domains. The optical waveguide spectra derived from the calculated dielectric constants demonstrate the feasibility of experimentally distinguishing the composite nanostructures with different inner morphologies in the hybrid metal NP-BCP nanostructures, by the measurement of the dielectric constants using OWS.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.727-729
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• 2007

Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

• 한국재료학회지
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• 제3권1호
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• pp.12-18
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• 1993

단결정 실리콘위에 스퍼터법으로 증착된 티타니움막을 급속가열로에서 고상반응에 의해 형성시킨 면저항 1.2 ohm/sq. 내외의 TiS$i_2$ 박막에 있어서 열안정성을 상부절연막의 유무 및 종류에 따라 조사하였다. 상부절연막은 상압 CVD로 증착한 USG(Undoped Silicate Glass, Si$i_2$) 막과 플라즈마 CVD법으로 증착한 PE-SiN(S$i_3$$N_4$)막을 사용했다. 열안정성 평가는 90$0^{\circ}C$에서 시간을 달리하여 TiS$i_2$막, PE-SiN막, USG막의 스트레스는 각각 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$의 인장응력을 나타내었다. 응집현상은 TiS$i_2$의 응집현상은 Nabarro-Herring 마이크로 크리프에 의한 원자의 확산관점에서 검토되었다.

• 한국진공학회지
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• 제7권3호
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• pp.167-272
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 $300^{\circ}C$일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.78-81
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• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.