• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.134-139
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• 2000

Ternary system of 40PMN-30PT-30PMW was prepared by using different reaction process. The PMN-PT was synthesized firstly, then it reacted to $PbWO_4$ as PbO and $WO_3$ sources. The dielectric constants were dependent on the density of sintered body and decreased with sintering temperature above $950^{\circ}C$. The highest dielectric constant was 24,000 in a sample sintered at $950^{\circ}C$ with the dielectric loss of 3 %. The temperature dependence of the dielectric constant were decreased with the increase of sintering temperature due to the appearance of double peak maxima. The lowest change in dielectric constant was -37-0 % from -55 to $125^{\circ}C$in a sample sintered at $1150^{\circ}C$ with dielectric constant of 9,900 at room temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.99-102
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• 1998

Cordierite ceramics with low dielectric constants were obtained through sol-gel techniques using as metal alkoxides. The powders for the sintered cordierite ceramics were prepared by hydrolysis of metal alkoxides with ethanol and distilled water. In the hydrolysis, the mole ratio of HCI/TEOS was controlled by changing the amount of HCI as a catalyst. The sol-gel derived powders were dried, pressed, and fired at $1300^{\circ}C$. The dried powders were calcined at $800{\circ}C$ for 3hours to remove residual organics. The fired bodies with different dielectric constants were obtained by using HCI adjusted to various mole ratios of HCI/TEOS in the process. The variation of the amount of HCI catalyst led to a significant influence on dielectric contant, which was attributed to the formation of pores in the sintered body. Especially, the porosity of the sintered body influenced the dielectric constants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.72-78
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• 1997

A free space transmission method using standard gain horn antennas in the frequency range from 9.0 to 10.5GHz is applied to determine the dielectric properties of grain such as rough rice ,brown rice and barley. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The moisture content of grain varied from 11 to 25% based on this wetted condition. The measured values of dielectric constants as a function of moisture density are compared with values of those obtained using he predicted model for estimating dielectric constants of grain. The effect of density fluctuation, high is an important parameter governing the dielectric properties of grain, on the dielectric constant and loss factor is presented. A new density-independent model in terms of measured attenuation an moisture density is proposed of reducing the effects of density fluctuation on the moisture content measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.322-325
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• 2012

Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.76-82
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• 1996

PLZT ceramics having two nominal compositions, $Pb_{1-3x/2}La_xV_{x/2}(Zr_{03}Ti_{03})O_3$ and $Pb_{1-x}La_x(Zr_{0.2}Ti_{0.5})_{1-x/4}V_{x/4}O_3$ (V: vacancy) with x=0.00~0.30, were prepared. The physical, structural, and dielectric properties were investigated by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and measurements of bulk density and dielectric constant. The two series with A-stie and B-site vacancies showed different physical, structural, dielectric properties, and, specially, Curie temperature. In comparison to PLZT with B-site vacancies, PLZT with A-site vacancies showed high Curie temperatures and low maxima of dielectric constant. Consequently, it is evident that the properties of PLZT ceramics depend on the vacancy formula adopted as a batch composition in preparation.