• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.324-325
• /
• 2012

다이아몬드 마이크로 블레이드의 절삭 효율을 향상시키고 소결 공정 중 윤활제의 유동성과 젖음성이 다이아몬드 마이크로 블레이드의 물성에 미치는 영향을 연구하기 위해 Cu/Sn 금속 결합재에 표면을 부식시킨 $WS_2$와 부식을 시키지 않은 $WS_2$ 윤활제를 각각 동일한 체적 분율로 첨가하였다. 윤활제의 표면 개질에 따른 마이크로 블레이드 결합재의 내마모성과 굽힘 강도 시험을 행하였고, 실착 절삭 시험을 위한 마이크로 블레이드 시편을 제작하여 수명 및 효율을 평가하였다. Cu/Sn 금속 결합재 파면에서의 $WS_2$ 입자 방향 분석을 통해 표면 개질 과정을 거친 $WS_2$가 압축소결 공정 중 압축 방향에 수직하게 위치하려는 경향이 크게 나타났으며, 이는 소결체의 강도와 경도를 향상시켰다. 마이크로 블레이드의 절삭 효율 및 수명을 평가하기 위한 실착 절삭 시험 결과, 윤활제 표면 부식처리는 처리하지 않은 경우에 비하여 절삭성능은 비슷하게 관찰되었으나 결합재와의 계면 결함을 줄이므로써 블레이드의 수명을 연장시킬 수 있었다.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.27 no.2
• /
• pp.351-360
• /
• 2000

The purpose of this study was to evaluate the microleakage of class V compomers according to acid etching treatment and treatment times. Extracted 180 sound human molar teeth were selected then prepared physiologic pulpal pressure far this experiment. In this study class V cavities were prepared on buccal surface with gingival margin located in 1mm superior to CEJ under simulate physiological conditions. These specimens were randomly divided into 6 groups of 30 each and restored following methods : A: Dyract AP + Prime&Bond 2.1 Group 1 : No acid etching, according to manufacturer's instruction. Group 2 : 15 seconds acid etching and same method with Group 1. Group 3 : 30 seconds acid etching and same method with Group 1. B: F2000 groups + Single Bond adhesive Group 1 : No acid etching, according to manufacturer's instruction. Group 2 : 15 seconds acid etching and same method with Group 1 Group 3 : 30 seconds acid etching and same method with Group 1. After 500 thermocycling between $5^{\circ}C\;and\;55^{\circ}C$, the specimens were sealed with glass ionomer and nail varnish then placed in 5% methylene blue dye for 5 hours and rinsed with tab water. The specimens were embedded in orthodontic clear resin, then sectioned buccolingually through the center of restoration with a low speed diamond saw. The dye penetration on each of the specimens were then observed with a stereomicroscope at $\times20$ magnification. The results of this study were statistically analyzed using the indepedent sample t-test and analysis of variance. Results were as follows, 1. In occlusal walls, microleakage were significantly reduced in acid etched group restored with Dyract AP but no statistically significance in F2000 groups. 2. In gingival walls, microleakage were significantly reduced in group 2 restored with Dyract AP, and group 2 and group 3 in F2000 groups. 3. All groups, except group 3 in Dyract AP, showed significantly less microleakage in occlusal wall than gingival wall. 4. No statistical significance were showed between group 2 and group 3 in both materials.

• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.387-395
• /
• 2001

The elastic modulus and the structural evolution were examined with the film thickness in polymeric, hard, graphitic diamond-like carbon (DLC) films. The DLC films used in the present study were prepared by radio frequency plasma assisted chemical vapor deposition (r.f.-PACVD) from $C_6H_6\;and\;CH_4$ gas. Elastic modulus of very thin DLC film was measured by free overhang method. This method has an advantage over the other methods. Because the substrate was removed by etching technique, the measured value is not affected by the mechanical property of the substrate. The structural evolution was investigated by the G-peak position of the Raman spectrum. The polymeric and graphitic films exhibited the decreased elastic modulus with decreasing film thickness. In polymeric films, the reason was that more polymeric film had been deposited in the initial stage of the film growth and in graphitic film more graphic films which had been deposited in the initial stage decreased the elastic modulus. The G-peak position of the Raman spectrum confirmed this result. On the other hand, the hard film showed the constant elastic modulus regardless to the film thickness. The structural change was not observed in this range of the film thickness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.135-135
• /
• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.183-183
• /
• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.71-72
• /
• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Restorative Dentistry and Endodontics
• /
• v.33 no.2
• /
• pp.133-140
• /
• 2008

The purpose of this study was to compare the apical micro leakage in root canal filled with Resilon by several self-etching primers and methacrylate-based root canal sealer. Seventy single-rooted human teeth were used in this study. The canals were instrumented by a crown-down manner with Gate-Glidden drills and .04 Taper Profile to ISO #40. The teeth were randomly divided into four experimental groups of 15 teeth each according to root canal filling material and self-etching primers and two control groups (positive and negative) of 5 teeth each as follows: group 1 - gutta percha and $AH26^{(R)}$ sealer: group 2 - Resilon, $RealSeal^{TM}$ primer and $RealSeal^{TM}$ sealer: group 3-Resilon, Clearfil SE $Bond^{(R)}$ primer and $RealSeal^{TM}$ sealer group 4-Resilon, $AdheSe^{(R)}$ primer and $RealSeal^{TM}$ sealer. Apical leakage was measured by a maximum length of linear dye penetration of roots sectioned longitudinally by diamond disk. Statistical analysis was performed using the One-way ANOVA followed by Scheffe's test. There were no statistical differences in the mean apical dye penetration among the groups 2, 3 and 4 of self-etching primers. And group 1, 2 and 3 had also no statistical difference in apical dye penetration. But, there was statistical difference between group 1 and 4 (p < 0.05). The group 1 showed the least dye penetration. According to the results of this study, Resilon with self-etching primer was not sealed root canal better than gutta precha with $AH26^{(R)}$ at sealing root canals. And there was no significant difference in apical leakage among the three self-etching primers.

• Transactions of Materials Processing
• /
• v.13 no.3
• /
• pp.253-261
• /
• 2004

The machining technology for the brittle materials such as ceramics are applied to the fields of MEMS(micro electromechanical system) by the progress of new machining technologies such as Etching, Diamond machining, Micro drilling, EDM(Electro discharge machining), ECDM(Electro discharge machining), USM(Ultrasonic machining), LBM(Laser beam machining), EBM(Electron beam machining). Especially, the USM technology can be applied to the dieletric brittle materials such as silicon, borosilicate glass, silicon nitride, quartz and ceramics with high aspect ratio. The micro machining system with machining force controlled position servo is developed in this paper and the optimized ultrasonic machining algorithm is constructed by the force controlled position servo control. The load cell is adapted in the force measuring and the servo control algorithm, suit for the ultrasonic machining characteristics, is estabilished with using the PID auto-tunning functions at the PMAC system which is generally adapted in the field of robot industries. The precision force signal amplifier is constructed with high precision operational amplifier AD524. The vacuum adsorption chuck which is made of titanum and internal flow line is engraved, is used in the workpiece fixing. The mahining results by USM shows that there are some deviation between the force command and the actual machining force that the servo control algorithm should be applied in the machining procedures. Therefore, the constant force controlled position servo system is developed for the micro USM system and by the examination machining process in USM, the stable USM system is realized by tracking the average value of machining force.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.115-127
• /
• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

• Korean Journal of Materials Research
• /
• v.25 no.11
• /
• pp.622-629
• /
• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.