• Title/Summary/Keyword: Diamond Slurry

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Effect on protective coating of vacuum brazed CMP pad conditioner using in Cu-slurry (Cu 용 슬러리 환경에서의 보호성 코팅이 융착 CMP 패드 컨니셔너에 미치는 영향)

  • Song M.S.;Gee W.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.434-437
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    • 2005
  • Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

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The Characterization of the Conditioner Disks with Various Diamond Shapes (다이아몬드 형상에 따른 컨디셔너 디스크의 특성 평가)

  • Kim, Kyu-Chae;Kang, Young-Jae;Yu, Young-Sam;Park, Jin-Goo;Won, Young-Man;Oh, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.563-564
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    • 2006
  • Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A diamond disk use during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In. this study, we characterized diamond disk with 9 kinds of sample.

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A Study on The Characteristics of Ultra Precision Lapping of Machinable Ceramic($Si_3N_4$) by Free & Fixed abrasive (자유지립 및 고정지립을 적용한 머신어블 세라믹($Si_3N_4$)의 초정밀 래핑 가공 특성에 관한 연구)

  • 장진용;이은상;조명우;조원승;이재형
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.537-542
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    • 2004
  • Machinble Ceramics have some excellent properties as the material for the mechanical components. It is, however, very difficult to grind ceramics with high efficiency because of their high strength, hardness and brittleness. Lapping used diamond slurry and lapping by in-process electrolytic dressing is developed to solve this problem. On this paper, a comparative study of processing ability of lapping used diamond slurry and lapping by in-process electrolytic dressing.

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Growth of Nanocrystalline Diamond Films on Poly Silicon (폴리 실리콘 위에서 나노결정질 다이아몬드 박막 성장)

  • Kim, Sun Tae;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.50 no.5
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    • pp.352-359
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    • 2017
  • The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

Influence of the Diamond Abrasive Size during Mechanical Polishing Process on the Surface Morphology of Gallium Nitride Substrate (Gallium Nitride 기판의 Mechanical Polishing시 다이아몬드 입자 크기에 따른 표면 Morphology의 변화)

  • Kim, Kyoung-Jun;Jeong, Jin-Suk;Jang, Hak-Jin;Shin, Hyun-Min;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.25 no.9
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    • pp.32-37
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    • 2008
  • Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application (다이아몬드 코팅 와이어로 가공된 태양전지용 실리콘 웨이퍼의 표면 특성에 관한 연구)

  • Lee, Kyoung-Hee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.6
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    • pp.225-229
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    • 2011
  • Most of the silicon cutting methods using the multi-wire with the slurry injection have been used for wafers of the crystalline solar cell. But the productivity of slurry injection cutting type falls due to low cutting speeds. Also, the direct contact with the metal wire and silicon block increases the concentration of metallic impurities in the wafer's surface. In addition, the abrasive silicon carbide (SiC) generates pollutants. And production costs are rising because it does not re-use the worn wire. On the other hand, the productivity of the cutting method using the diamond coated wire is about 2 times faster than the slurry injection cutting type. Also, the continuous cutting using the used wire of low wear is possible. And this is a big advantage for reduced production costs. Therefore, the cutting method of the diamond coated wire is more efficient than the slurry injection cutting technique. In this study, each cutting type is analyzed using the surface characteristics of the solar wafer and will describe the effects of the manufacturing process of the solar cell. Finally, we will suggest improvement methods of the solar cell process for using the diamond cutting type wafer.

The Pad Recovery as a function of Diamond Shape on Diamond Disk for Metal CMP (Metal CMP 용 컨디셔너 디스크 표면에 존재하는 다이아몬드의 형상이 미치는 패드 회복력 변화)

  • Kim, Kyu-Chae;Kang, Young-Jae;Yu, Young-Sam;Park, Jin-Goo;Won, Young-Man;Oh, Kwang-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.47-51
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    • 2006
  • Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A conditioning disk is used during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In this study, we characterized diamond disk with 9 kinds of sample.

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Manufacturing of 3N Grade Silica by Thermal Oxidation using the Recovered Silicon from the Diamond Wire Sawing Sludge (다이아몬드 와이어 쏘잉 슬러지로부터 회수(回收)한 실리콘의 열산화(熱酸化)에 의한 3N급(級) 실리카 제조(製造))

  • Jeong, Soon-Taek;Kim, Nam-Chul
    • Resources Recycling
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    • v.22 no.2
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    • pp.37-43
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    • 2013
  • Unlike the conventional slurry type wire sawing, the diamond wire sawing method adopts diamond plated wire as sawing media instead of slurry consisted of both silicon carbide and oil. Wafering with diamond plated wire leaves solid element of the sludge mostly made up of silicon, and it is not difficult to recover 95% or more of silicon by a simple separation process of oil from the sludge. In this study, silicon was recovered from the sludge by drying process and organic and metal impurities were removed by sintering process. As result 3N grade silica was obtained successfully by thermal processing utilized the fact that the recovered silicon readily combines with oxygen due to fine particle size.