• Title/Summary/Keyword: Diamond Lapping Film

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Process Development of Aligning Carbon Nanotube from the Paste (페이스트를 이용한 탄소나노튜브의 수직배양법 연구)

  • Lee, Jae-Kul;Moon, Joo-Ho;Lee, Dong-Gu
    • Journal of the Korean Ceramic Society
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    • v.39 no.5
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    • pp.467-472
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    • 2002
  • Long Carbon Nanotubes(CNTs) were cut by diamond lapping film followed by observation using SEM. The paste was prepared by mixing shortened CNT powder, ${\alpha}$-terpineol used as a solvent, and ethylcellulose as a binder. This paste was deposited on glass substrate by screen printing and extruded by syringe. After screen printing, several post-treatments were performed to control the alignment of CNTs perpendicular to the substrate. The deposited CNTs were scratched by sand paper or diamond lapping film. It was also treated by attachment followed by an immediate detachment using the adhesive tape. SEM observation indicates that excellent vertical alignment of CNTs could be achieved by simple post-treatments from the screen printed-CNTs paste. Similar alignment of CNTs is also observed in the as-extruded CNTs paste.

Surface Lapping Process and Vickers Indentation of Sapphire Wafer for GaN Epitaxy (GaN 증착용 사파이어 웨이퍼의 표면가공에 따른 압흔 특성)

  • Shin Gwisu;Hwang Sungwon;Kim Keunjoo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.4 s.235
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    • pp.632-638
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    • 2005
  • The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

Determination of Efficient Superfinishing Conditions for Mirror Surface Finishing of Engineering Ceramics (엔지니어링 세라믹스의 경면연마를 위한 효율적인 슈퍼피니싱 조건의 결정)

  • Kim, Sang-Kyu;Cho, Young-Tae;Jung, Yoon-Gyo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.13 no.5
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    • pp.76-81
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    • 2014
  • The Engineering ceramics have some excellent properties as materials for modern mechanical and electrical components. It is, however, not easy to polish them efficiently because they are strong and hard. This study is carried out to obtain a mirror surface on engineering ceramics by surperfinishing with high efficiency. To achieve this, we conducted a series of polishing experiments using representative engineering ceramics, such as $Al_2O_3$, SiC, $Si_3N_4$ and $ZrO_2$, using diamond abrasive film from the perspective of oscillations peed, the rotational speed of the workpiece, contact roller hardness, contact pressure and feed rate. Furthermore, the polishing efficiency and characteristics for engineering ceramics are discussed on the basis of optimal polishing time and surface roughness. Our results confirmed that efficient superfinishing conditions and polishing characteristics of engineering ceramics can be determined.