• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• 한국진공학회지
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• 제2권2호
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• pp.199-208
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• 1993

Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 염마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si)위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 자장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다.

• 한국정밀공학회지
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• 제16권4호통권97호
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• pp.148-154
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• 1999

This study was carried out to verify grinding performance of dental diamond bur and investigate the possibility of AE application in dentistry field. Workpieces were made of acryl and bovine respectively for the experiments in this study. Grinding test was conducted to get the data of grinding resistance and specific grinding energy of four different types of diamond bur by using tool dynamometer. AE signal was acquired to verify grinding process in the AE measuring system. Tool wear was observed to find parameters about grinding characteristics of diamond bur by means of SEM picture. It was found that the wear of dental diamond bur could be detected with polishing of grinding material, removal of adhesive parts, wear of particles neighboring cutting nose, loss of material and elevation of temperature. The wear of B, C, D type diamond bur is due to wear and fracture of grain size. Abnormal state can be found through the behavior of AE signal in the grinding working. As a result, it is expected that forecast of abnormal state is possible using AE equipments under real time process.

• 한국진공학회지
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• 제7권s1호
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• 한국진공학회지
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• 제10권3호
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• pp.356-360
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• 2001

다음극 DC PACVD법에서 합성된 직경 80 mm, 두께 900 $\mu\textrm{m}$ ~ 950 $\mu\textrm{m}$의 자유막 다이아몬드웨이퍼의 특성을 분석하였다. 광투과현미경으로 결함의 분포를 관찰하고, Raman 및 IR 장치로 결정성을 분석하였다. 결함은 결정입계 부위에서 많이 관찰되었다. 또한 하나의 결정립에서 (111)면이 (100)면에 비해 상대적으로 많은 결함을 함유하였다. Raman 다이아몬드 peak의 FWHM 및 10.6 $\mu\textrm{m}$ 파장에서의 IR 투과도는 각각 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$및 51.7% ~ 61.9%로, 두 값의 웨이퍼 내에서 균일성은 $\pm$7% 및 $\pm$9%이었다. 다이아몬드 웨이퍼의 결정성은 가운데에서 가장자리로 갈수록 저하되었다.

• 소성∙가공
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• 제15권7호
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• pp.518-523
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• 2006

Wet wire drawing of brass coated steel wire, used for tire reinforcement, is realized with Tungsten Carbide(WC) dies sintered with a cobalt(Co) binder. Dies wear represents an important limitation to the production process and cost savings. Several parameters, such as Co content, WC grain size of tungsten carbide, sintering conditions, and so on, affect on the wear of the drawing die. In this study, the effect of the diamond abrasive particle size on the life of the WC centered dies of the wet wire drawing was investigated. Wet wire drawing experiments were carried out on a wet wire drawing machine. From the experiments, the dies life, dies fracture, wire surface roughness, and wire breaks were investigated. From the results, it was found that the wear of the WC dies increased with the increase in the diamond abrasive particle size.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• 전기화학회지
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• 제3권4호
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• pp.200-203
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• 2000

Microwave plasma chemical vapor deposition을 이용하여 붕소가 도핑된 전도성 다이아몬드 박막을 제조하였다. 탄소원으로는 아세톤과 메탄올을 사용하였으며, 붕소원으로는 $B_2O_3$를 사용하고, 운반가스로는 수소를 사용하였다. 이때 붕소의 도핑농도는 약 $10^2ppm\;(B/C)$이였다. Si 기질 각 부분의 온도와 플라즈마에서의 거리를 다르게 하기 위해서 Si 기질을 배치함에 있어 약$10^{\circ}$를 기울여 다이아몬드 박막을 성장시켰다. 실험결과 모두 동일한 조건 이였으나 같은 Si 기질 위에 높이에 따른 온도구배가 형성되었으며, 그에 따라 다이아몬드의 결정 또한 각기 달랐다. 다이아몬드 박막에 나타난 결정형태의 분포는 약 $3\~4$부분으로 나뉘어 있었다 제조된 다이아몬드 박막의 특성을 확인하기 위해 Raman spectrum을 이용해 다이아몬드의 결정성을 확인하였고, 표면의 형태를 관찰하기 위해 현미경을 사용하였다. 입자의 크기는 각기 다른 Si기질의 높이에 의한 온도구배로 인하여, 기질의 높이에 따라 서서히 달라졌다. 다이아몬드 박막의 Raman spectrum측정결과 $1334cm^{-1}$에서 강한 peak가 발견되었으며, 이것은 결정성 다이아몬드의 일반적인 특성 이였다. Si 기질 중 낮은 곳에 위치한 부분의 Raman spectrum은 비다이아몬드의 peak인 $1550cm^{-1}$ 부근에서 넓게 peak가 상승된 것이 관찰되었다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.879-880
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• 2006

Effect of phase transformation and grain-size variation of hot-pressed cobalt on its dry sliding wear was investigated. The sliding wear test was carried out against glass (83% $SiO_2$) beads at 100N load using a pin-on-disk wear tester. Worn surfaces, cross sections, and wear debris were examined by an SEM. Phases of the specimen and wear debris were identified by an XRD. Thermal transformation of the cobalt from the hcp $\varepsilon$ phase to the $\gamma$ (fcc) phase during the wear was detected, which was deduced as the wear mechanism of the sintered cobalt.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.326-331
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• 2007

Large-scale molecular dynamics simulations are performed to verify the deformation characteristics of grain boundaries in nanolithography process. The copper substrate made of 200,000 atoms is constructed by two grains in different crystal orientations using dynamic relaxation method. The grain boundary is located in the middle of the substrate with $45\sim135$ degree angles. The plowing tip is made of diamond-like-carbon atoms in a variety of shapes. In the simulations, the generation, propagation, and accumulation of dislocations are observed inside the substrate. From the numerical results, we address the dynamic behavior of the grain boundaries as well as the frictional characteristics in terms of the morphology of initial grain boundaries.