• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.94-97
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• 2004

In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1532-1535
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• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.469-472
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• 2003

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.

• Elastomers and Composites
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• 제57권4호
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• pp.157-164
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• 2022

Representative bulletproof materials, such as aramid or ultra-high molecular weight polyethylene(UHMWPE), have excellent strength and modulus in the plane direction but are very vulnerable to forces applied in the thickness direction. This paper reports a study on the effects of reinforcement in the thickness direction when bulletproof composite fabrics are prepared to improve their performance. Aramid and UHMWPE fabrics were combined using the film-bonding, needle-punching, or stitching methods and then subjected to low-velocity projectile and ball-drop impact tests. The results of the low-velocity projectile test indicated that the backface signature(BFS) decreased by up to 29.2% in fabrics obtained via the film-bonding method. However, the weight of the film-bonded fabric increased by approximately 23% compared with that obtained by simple lamination, and the fabric stiffened on account of the binder. Flexibility, light weight for wearability, and excellent bulletproof performance are very important factors in the development of bulletproof materials. When the needle-punching method was used, the BFS increased as the fibers sustained damage by the needle. When the composite fabrics were combined by stitching, no significant difference in weight and thickness was observed, and the BFS showed similar results. When a diagonal stitching pattern was employed, the BFS decreased as the stitching density increased. By contrast, when a diamond stitching pattern was used, the fabric fibers were damaged and the BFS increased as the stitching density increased.

• 한국진공학회지
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• 제7권1호
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• pp.59-65
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• 1998

13.56MHz를 사용하는 r.f.PACVD(Plasma assisted chemical vapor deposition)방법 으로 다층 다이아몬드상 카본(DLC)필름을 Si wafer기판 위에 합성하였다. 다층 DLC필름은 2.5$\mu$m두께의 순수한 DLC필름과 0.2$\mu$m두께의 Si이 함유된 Si-DLC필름으로 구성되었으 며, ball on disk type의 tribometer를 이용하여 대기 중에서 다층 DLC필름의 마모거동을 고 찰하였다. 표면층으로 합성된 Si-DLC필름내의 Si함량이 증가함에 따라 다층 DLC필름과 AISI52100 steel ball 사이에 0.1 이하의 낮은 마찰계수를 유지하는 기간이 증가하였다. 44,000cycle과 158,400cycle의 마모실험 후 측정된 다층 DLC필름의 마모율은 각각 $2.5\times10^{-8}\sim1.8\times10^{-7}\textrm{mm}^3$/rev.과 $7.1\times10^{-9}\sim1.8\times10^{-8}\textrm{mm}^3$/rev.로 나타났다. 158,400cycle의 마모실험 후 측정된 마모율은 내마모 특성이 우수한 DLC필름보다도 2배 정도 우수한 것으로 나타났 다. 마모시험에 의해 형성된 debris의 조성을 분석한 결과, 이런 낮은 마찰계수와 우수한 내 마모 특성은 steel ball의 wear 표면을 덮고 있는 Si oxide debris층의 형성에 따른 결과로 판단되었다. 또한, 이러한 steel ball의 wear scar표면에 형성된 debris층을 제거하여도, 새로 운 Si oxide debris층이 wear scar표면에 다시 생성되어 낮은 마찰계수를 유지하고 있었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• 한국진공학회지
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• 제3권2호
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• pp.207-211
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• 1994

전체 압력을 변화시키면서 다이아몬드박막을 n형 Si(100) 기판 위에 마이크로 웨이브 화학기상 증착법으로 증착하였다. 높은 압력으로 (225 torr)증착된 박막은 낮은 압력(60 torr)의 박막보다 다이아몬 드 순수도가 향상되었으며 표면도 매끈한 {100}형상이 우세하였다. 다이아몬드 박막의 성장양식을 알아 보기 위하여 낮은 압력(600torr)과 높은 압력(225 torr)에서 증착된 박막의 미세구조를 투과전자현미경으 로 각각 분석하였다. 전체압력이 낮은 경우 박막과 기판의계면에는 a-SiC의 중간층이 형성되어 있는 것 을 확인하였으며 전체압력이 높은 경우의 박막은 evolutionary selection rule에 따라 성장하는 것으로 추론되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.147-152
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• 2002

A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.

• Corrosion Science and Technology
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• 제10권2호
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• pp.65-70
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• 2011

DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. The properties of interlayer between the substrate and the DLC film were studied. Arc ion plating method have been employed to deposit onto substrate and sputtering method was used for synthesizing DLC onto interlayer. Among these six types of interlayer, deposited DLC film onto TiCN showed excellent value for characteristics. From the results of analysis for physical properties of DLC films, it seems that the adhesion forces were more important factors than intrinsic mechanical properties such as hardness, roughness and wear resistance of DLC films. AFM(Atomic Force Microscope) was used for understanding roughness of DLC films. Hardnesses of the coating layers were identified by nano-indentation method and adhesions were checked by scratch method.

• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.