• Journal of the Korean Society of Industry Convergence
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• v.21 no.2
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• pp.63-70
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• 2018

In this paper, the design of a novel 6-axis compliance device with force/torque sensing capability and the experiment results on force measurement are presented. Unlike the traditional control methods using a force/torque sensor with very limited compliance, the force control method employs a compliant device to provide sufficient compliance between an industrial robot and a rigid environment for more stable force control. The proposed compliance device is designed to have a diagonal stiffness matrix at the tip and uses strain gauge measurement which is robust to dust and oil. The measurement circuit is designed with low-cost IC chips however the force resolution is 0.04N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.868-871
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• 2002

In this paper, we introduce an efficient three-dimensional magnetic field mapping system for a Deflection Yoke (DY) in Cathode-Ray Tube (CRT). A three-axis Hall probe mounted in a small cylindrical bar and three stepping motors placed in a nonmagnetic frame are utilized for the mapping. Prior to the mapping starts, the inner contour of DY is measured by a laser sensor to make a look-up table for inner shape of DY. Three-axis magnetic fields are then digitized by a three-dimensional Hall probe. The results of the mapping can be transformed to various output formats such as multipole harmonics of magnetic fields. Field shape in one, two and three-dimensional spaces can also be displayed. In this paper, we present the features of this mapping device and show some analysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Journal of Institute of Control, Robotics and Systems
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• v.7 no.2
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• pp.160-167
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• 2001

This paper presents control and evaluation of a new haptic device with a 6-DOF parallel mechanism for interfacing with virtual reality. This haptic device has low inertial, high bandwidth compactness, and high output force capability mainly due to of base-fixed motors. It has also wider orientation workspace mainly due to a RRR type spherical joint. A control method is presented with gravity compensation and with force feedback by an F/T sensor to compensate for the effects of unmodeled dynamics such as friction and inertia. Also, dynamic performance has been evaluated by experiments. for force characteristics such as maximum applicable force, static-friction force, minimum controllable force, and force bandwidth Virtual wall simulation with the developed haptic device has been demonstrated.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.5
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• pp.249-256
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• 2004

This paper suggests a novel evaluation scheme of protective effectiveness in distribution systems. The adequacy of every parameter in a protective device is evaluated for the setting or correction rules. Then, the protective effectiveness of a device, device-wise effectiveness, is obtained by the combination of the parametric evaluation results. The coordination-wise effectiveness between devices can be calculated by evaluating the parameters which contribute the performance of coordination. The protective effectiveness of the whole system can be obtained by combining the device-wise and coordination-wise effectiveness values. The rules, in this paper, are categorized into three groups; rules for single parameter, rules for coordination between parameters, and rules for coordination between protective devices to form a hierarchical calculation model. The proposed method is applied to a typical distribution network to show its effectiveness.

• Journal of Information Display
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• v.2 no.1
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• pp.34-37
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• 2001

We developed the tension mask of which thickness increased from 25 urn to 50 urn to reduce the mask cost and improve the vibration property. First of all, the limitation by which rail structure can support is calculated and the optimal thickness of mask is determined. To prevent the reduction of brightness and brightness uniformity, the dimensions of mask was reassigned. As a result, the increase of mask thickness brought about a reduction in cost and improvement of howling property which had been a weak point of flat CRTs.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.917-922
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• 2004

As the tasks of robots become more diverse, some complicated tasks have come to require force and position hybrid control. A compliant device can be used to control force and position simultaneously by separating the twist of the robot's end effector from the twist of compliance and freedom by using stiffness mapping of the compliant device. The development of a fuzzy gain scheduling scheme of control for a robot with a compliant device is described in this paper. Fuzzy rules and reasoning are performed on-line to determine the gain of twists based on wrench error and twist error and twist of compliance and twist of freedom ratio. Simulation results demonstrate that better control performance can be achieved in comparison with constant gain control.

• Proceedings of the KSR Conference
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• 2006.11b
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• pp.723-730
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• 2006

In the electrical railway, the tension ascension of contact wire is essential to speed up of train and current collection performance of catenary largely depends on the tension. The tension variation rate of the tensioning device used in existing line limits within 5%, and the tension variation rate of the spring-type tensioning device installed at the section where tensioning length is short bounds within 15%. So it is urgent for us to localize it for high speed line, which the tension variation rate is limited within 3%. Therefore in this study, a pulley-type tensioning device for high speed line is developed. To verify the performance of developed device, a performance test, overload test and failure test is carried out under the code of the Kyung-Bu High Speed line. And it is secured durability performance through a fatigue test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.