• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.3
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• pp.573-579
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.311-316
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• Proceedings of the Korea Concrete Institute Conference
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• 2006.05a
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• pp.474-477
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• 2006

To predict thermal stress independent of uncertain material properties of early age concrete, such as elastic modulus and creep, thermal stress device is used. In order to verify the application of various degree of constraint in the thermal stress device, a series of experiments were performed on mass concrete followed by numerical simulation. The application of various degrees of constraint can be achieved by using constraint frame material with different thermal expansion coefficient, length, and cross sectional area. Temperature development in the real structure has been simulated using temperature and humidity control chamber. The results from experiments and numerical analysis show that the thermal stresses estimated from simulation agree well with the general stress variations in the real structure even though the properties of concrete are uncertain.

• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.829-832
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• 2006

In this study, the influence of the magnetic field on ferrite slurry's injection time during the slurry forming process was investigated. The evaluation system of the slurry's injection time under the strong magnetic field was designed with FEM and manufactured. Studied parameters were the applied magnetic field, the input pressure of the slurry, and the supplying tube materials. As the results, the injection time was increased with the external magnetic field strength and rapidly decreased with increasing the input pressure of the slurry. Also the injection time was decreased when the supplying tube was manufactured with the magnetic material having the higher magnetic permeability than the ferrite.

• Proceedings of the Korea Society for Simulation Conference
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• 2000.11a
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• pp.174-179
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• 2000

Proposed in the paper is a V-FMS (Virtual Flexible Manufacturing System) model to be used as a prototyping tool for FMS design. The proposed V-FMS framework follows an object-oriented modeling (OOM) paradigm and is based on a set of user requirements for FMS prototyping. The V-FMS model consists of four types of object: virtual device, transfer handler, state manager and flow controller. A virtual device model, which corresponds to a static model in OOM, consists of two parts, shell and core, for reusability. A transfer handler corresponds to a functional model of OOM and it stores low level device commands required to perform job flow operations between giving and taking devices. The state manager and the flow controller constitute a dynamic model of OOM. The proposed V-FMS model has been implemented for a couple of linear type FMS-lines

• Journal of Korean Society of Water and Wastewater
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• v.25 no.1
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• pp.31-39
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• 2011

In order to suggest the methodology for achieving anti-vortex device within multi pump intake well, CFD(Computational Fluid Dynamics) simulation were conducted for two alternative suggestions. Multi-intake sump model with anti-vortex device basins were designed and the characteristics of submerged vortex were investigated in the flow field by numerical simulation. From the results of simulations, to install the horizontal plate and vertical cross plates within basins were effective for preventing air-induction vortex.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.1 s.232
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• pp.81-87
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• 2005

A fracture of hand held device, such as radio, TV and CD-RW drive, mainly occurs due to drop situation. For CD-RW drive, the need of high reading/writing speed in conjunction with low price accelerates the fracture of the device. Computer simulation can reduce the period of development and enhance impact characteristic of device. In this study, the detailed finite element model of CD-RW drive was developed to predict the damage under drop conditions. Material property for shock absorbing damper was obtained from tensile test of raw material. A MOONEY-RIVLIN type rubber in LS-DYNA was used as the material model of damper. To assess the reliability of the developed model, drop test at 200G-2msec and 150G-10msec condition was conducted and acceleration at pick-up was compared.

• Fire Science and Engineering
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• v.10 no.2
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• pp.28-39
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• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

• Journal of IKEEE
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• v.20 no.1
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• pp.94-102
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• 2016

This paper proposes a new prediction method to reduce times and labor of repetitive multi-physics simulation. To achieve exact results from the whole simulation processes, complex modeling and huge amounts of time are required. Current multi-physics analysis focuses on the simulation method itself and the simulation environment to reduce times and labor. However this paper proposes an alternative way to reduce simulation times and labor by exploiting machine learning algorithm trained with data set from simulation results. Through comparing each machine learning algorithm, Gaussian Process Regression showed the best performance with under 100 training data and how similar results can be achieved through machine-learning without a complex simulation process. Given trained machine learning algorithm, it's possible to predict the result after changing some features of the simulation model just in a few second. This new method will be helpful to effectively reduce simulation times and labor because it can predict the results before more simulation.