• Journal of the Korean Chemical Society
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• v.14 no.1
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• pp.37-43
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• 1970

Durch Umsetzung an vernetzten p-lithiumstyrolhaltigen Copolymeren ist es nicht moglich, Austauscherharze mit Benzoylaceton-oder 8-Hydroxy-chinolingruppen mit praktisch brauchbarer Kapazitat herzustellen. Tetraphenylarsoniumchlorid-Gruppierungen enthaltende Austauscher mit einem Gehalt von etwa 1,3 mval/g an funktionellen Gruppen lassen sich aus vernetzten p-lithiumstyrolhaltigen Copolymeren und Triphenyl-arsinoxid herstellen. Aus einer Quecksilber(II)-chlorid-Losung nehmen in wassrigem Dioxan etwa 60% der im Harz befindlichen funktionellen Gruppen Quecksilberionen auf.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.144-145
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• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.

• IMMUNE NETWORK
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• v.8 no.3
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• pp.82-89
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• 2008

Background: Although a skin test is the primary option for detecting allergen-specific IgE in clinics, the serum IgE immunoassay is also important because it allows for the diagnosis of allergy without any accompanying adverse effect on the patient. However, the low detection limit of IgE levels by immunoassay may restrict the use of the method in some occasions, and improving its sensitivity would thus have a significant implication in allergy-immunology clinics. Methods: In this study, we attempted to detect specific serum IgE by using immuno-polymerase chain reaction (IPCR) which combines the antigen-antibody specificity of enzyme-linked immunosorbent assays (ELISAs) with the amplification power of PCR. Results: Our results demonstrated that Blo t5-specific serum IgE can be detected by IPCR with a 100-fold higher sensitivity than ELISA, and cross-reactivity of serum IgE to other mite allergens is able to be analyzed by using only $0.3{\mu}l$ of serum sample. Use of real-time IPCR seemed to permit more convenient determination of specific serum IgE as well. Conclusion: We believe that IPCR can serve as a valuable tool in determining specific serum IgE, especially when the amount of serum sample is limited.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.120-124
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• 1998

N-tert-Butyl-2-(1-acetoxy-2-fluoro-1-butyl)benzenesulfonamide의 분자 및 결정구조를 X-선회절법으로 연구하였다. 결정의 공간군은 P21/c이고, 단위포 상수는 a=8.583(2) , b=14.674(2) , c=14.703(2) , β=103.23(1)0, Z=4, V=1802.6(5) 3, Dc=1.27 Mgm-3이다. 회절반점들의 세기는 Rigaku AFC-5 Diffractometer로 얻었으며, graphite로 단색화한 Cu-KαX-선을 사용하였다. 분자구조는 직접법으로 풀었으며 최소자승법으로 정밀화하였다. 최종신뢰도 R값은 2472개의 회절반점에 대하여 0.069였다. 분자 내에 N(7)과 O(4)사이에 1개의 수소결합[2.990(4) ]을 갖으며, C(14)와 C(15)는 반대배열을 갖고 있다. 분자간 가장 인접한 거리는 3.465(5) [C(19) O(5)] (symmetry code: -x, y+1/2, -z+1/2)로 분자간 접촉은 van der Waals 힘에 의해 결합되어 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.77-80
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• 1995

GaSb crystals were grown by the vertical Bridgman method. P-type GaSb crystals were grown with Ga:Sb=1:1 at % ratio without dopants and with Te, respectively. Also, GaSb:Te crystals were investigated. Lattice constants were 6.117${\AA}$ for p-type. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p≡8 x $10^{16}$$cm^{-3}$, p≡0.20$\Omega$-cm, ${\mu}$$_{n}$≡$400\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡1 x $10^{17}$$cm^{-3}$, p≡0.15 $\Omega$-cm, ${\mu}$$_{n}$≡$500\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type at 300K. In case of treating with metal ion of $Ru^{+3}$, $Pt^{+1}$, p≡2 x $10^{17}$$cm^{-3}$, p≡0.08$\Omega$-cm, ${\mu}$$_{n}$≡420$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡2.5 x $10^{17}$$cm^{-13}$, p≡0.07 $\Omega$-cm, ${\mu}$$_{n}$≡520$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type were obtained.

• Asian-Australasian Journal of Animal Sciences
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• v.1 no.4
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• pp.201-208
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• 1988

Fifty-six lactating Surti buffaloes, fed rice straw, were allocated to seven treatment groups as follows: 1. Straw supplemented with 2% urea (SS) + 1.5kg rice bran (RB) 2. Straw treated with 4% urea in an open stack (TS open) 3. TS open + 1.5 kg RB 4. TS open + 3.0 kg RB 5. TS open + 1.5 kg RB + 3.0 kg Gliricidia (Gl) 6. Straw treated with 4% urea in a closed pit (TS closed) 7. TS closed + 1.5 kg RB + 3.0 kg Gl Milk production, butterfat percentage and liveweight gain of cows and calves were measured and tested with analysis of variance. The results are: - The animals on urea treated straw (group 2) had a higher milk production (p<0.05), higher butterfat production (p<0.05) and less liveweight gain loss (p<0.05) than the animals on urea supplemented straw (group 1). Butterfat percentage also increased by treatment, although not significantly (p>0.05). - Increasing levels of rice bran (groups 3 and 4 compared to 2) increased total milk production and milked quantity of butterfat, while butterfat percentage decreased (p < 0.05). - Milk production increased (p <0.05) with extra rice bran added (group 4 compared to 3), but was not affected (p > 0.05) by Gliricidia addition (group 5 compared to 3). Butterfat percentage dropped with extra rice bran supplement (p <0.05). The lack of response to Gliricidia indicated that protein is not limiting in treated straw, or that Gliricidia protein is partly insoluble. - System of treatment had no effect on milk production (p >0.05), while supplementation with 1.5 kg RB and 3.0 kg Gliricidia increased production and caused a lower butterfat percentage (p <0.05) (groups 2, 5, 6 and 7 compared). A significant (p <0.05) interaction treatment system x supplementation was present. It was concluded, that both treatment and supplementation did affect milk production as well as milk composition. Gliricidia addition gave less effect than rice bran, indicating different requirements for starchy substances in the feed. Treatment of straw does not negatively affect butterfat production, it can increase butterfat production and even butterfat percentage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.