• Tunnel and Underground Space
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• v.13 no.2
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• pp.153-168
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• 2003

The objective of this present study is to understand long term(500 years) thermohydromechanical interaction behavior in the vicinity of a repository cavern on the joint location and repository depth variations. The model includes a saturated discontinuous granitic rock mass, PWR spent nuclear fuel in a disposal canister surrounded with compacted bentonite inside a deposition hole, and mixed bentonite backfilled in the rest of the space within a repository cavern. It is assumed that two joint sets exist within the model. Joint set 1 includes joints of 56$^{\circ}$ dip angle, spaced at 20 m, and joint set 2 is in the perpendicular direction to joint set 1 and includes joints of 34$^{\circ}$ dip angle, spaced at 20 m. In order to understand the behavior change on the joint location variations, 5 different models of 500m in depth are analyzed, and additional 3 different models of 1000 m in depth are analyzed to understand the effect of depth variation.

• Tunnel and Underground Space
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• v.17 no.1 s.66
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• pp.32-42
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• 2007

Severe damage can occur around deposition holes due to complex interaction of thermo-hydro-mechanical (THM) loading during the long term operation of high level radioactive waste repository. Many candidate sites for repository are located in crystalline rock mass, therefore mechanism of damage follows the form of brittle fracture and failure. This paper briefly introduces major outcomes from 15 years international collaborative project, DECOVALEX, and presents major study results for current ongoing benchmark test study from DECOVALEX-THMC, to evaluate the effect of THM loading to rock mass in excavation damaged zone (EDZ) near deposition holes. Through benchmark test model by simplifying THM loading to boundary loading obtained numerical results are compared, and discrete fracture interaction after up to 1 million years operation is discussed.

• Geomechanics and Engineering
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• v.8 no.6
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• pp.811-828
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• 2015

Proper modelling of the basal resistance terms is key in simulating the motion of fluidized granular flow. In this paper, standard depth-averaged governing equations of granular flow are used together with the classical Coulomb, Voellmy, and velocity dependent friction models (VDFM). A high-resolution modified TVDLF method is implemented to solve the partial differential equations without numerical oscillations. The effects of basal resistance terms on the motion of granular flows such as geometric shape evolution, travel times and final deposits are analyzed. Based on the numerical results, the predictions of the front and rear end positions and developing length of granular flow with Coulomb friction model show excellent agreements with experiment results reported by Hutter et al. (1995), and illustrate the validity of the numerical approach. For the Voellmy model, the higher value of turbulent coefficient than reality may obtain more reasonable predicted runout for the small-scale avalanche or granular flow. The energy exchange laws indicate that VDFM is different from the Coulomb and Voellmy models, although the flow characteristics of both three models fit the measurements and observations very well.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.29-30
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• 2011

We have demonstrated the fabrication of sub 30 nm MTJ pillars with PMA characteristics. The multi-step IBE process performed at $45^{\circ}$ and $30^{\circ}$, using NER resulted in almost vertical side profiles. There deposition on the sidewalls of the NER prevented lateral etching of the resist hard mask allowing vertical MTJ side profile formation without any reduction in the lithographically defined resist lateral dimensions. For the 28nm STT-MTJ pillars, the measured TMR ratio was 13 % with resistance of 1 $k{\Omega}$, which was due to remaining redeposition layers less than 0.1 nm thick. With further optimization in multi-step IBE conditions, it will be possible to fabricate fully operating sub 30 nm perpendicular STT-MTJ structures for application to future non-volatile memories.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.162-165
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• 2007

We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

• Tunnel and Underground Space
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• v.32 no.1
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• pp.59-77
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• 2022

Currently, the design reference temperature of the buffer material for disposing of high-level radioactive waste is less than 100℃, so if the heat dissipation capacity of the buffer material is improved, the spacings of the disposal tunnel and the deposition hole in the repository can be reduced. First of all, this study tries to analyze the criteria for thermal-hydraulic-mechanical performance of the buffer materials and to investigate the researches regarding the enhanced buffer materials with improved thermal conductivity. First, the thermal conductivity should be as high as possible and is affected by dry density, water content, temperature, mineral composition, and bentonite type. the organic content of the buffer material can have a significant effect on the corrosion performance of a canister, so the organic content should be low. In addition, hydraulic conductivity of the buffer material should be less than that of near-field rock and swelling pressure should be appropriate for buffer materials to function properly. For the development of enhanced buffer materials, additives such as sand, graphite, and graphite oxide are typically used, and a thermal conductivity can be greatly improved with a very small amount of graphite addition compared to sand.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.264-264
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• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• Tunnel and Underground Space
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• v.11 no.3
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• pp.257-269
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• 2001

Numerical simulation is performed to understand the structural behavior of an underground radwaste repository, assumed to be located at the depth of 500 m, in a granitic rock mats, in which a fault intersects the roof of the repository cavern. Two dimensional universal distinct element code, UDEC is used in the analysis. The numerical model includes a granitic rock mass, a canister with PWR spent fuels surrounded by the compacted bentonite inside the deposition hole, and the mixed bentonite backfilled in the rest of the space within the repository cavern. The structural behavior of three different cases, each case with a fault of an angle of $33^{\circ},\;45^{\circ},\;and\;58^{\circ}$ passing through the cavern roof-wall intersection, has been compared. And then fro the case with the $45^{\circ}$ fault, the hydro-mechanical, thermo-mechanical, and thermo-hydro-mechanical interaction behavior have been studied. The effect of the time-dependent decaying heat, from the radioactive materials in PWR spent fuels, on the repository and its surroundings has been studied. The groundwater table is assumed to be located 10m below the ground surface, and a steady state flow algorithm is used.

• Tunnel and Underground Space
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• v.31 no.4
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• pp.221-242
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• 2021

A numerical study of the performance assesment of coupled thermo-hydro-mechanical (THM) processes in improved Korean reference disposal system (KRS⁺) for high-level radioactive waste is conducted using TOUGH2-MP/FLAC3D simulator. Decay heat from high-level radioactive waste increases the temperature of the repository, and it decreases as decay heat is reduced. The maximum temperature of the repository is below a maximum temperature criterion of 100℃. Saturation of bentonite buffer adjacent to the canister is initially reduced due to pore water evaporation induced by temperature increase. Bentonite buffer is saturated 250 years after the disposal of high-level radioactive waste by inflow of groundwater from the surrounding rock mass. Initial saturation of rock mass decreases as groundwater in rock mass is moved to bentnonite buffer by suction, but rock mass is saturated after inflow of groundwater from the far-field area. Stress changes at rock mass are compared to the Mohr-Coulomb failure criterion and the spalling strength in order to investigate the potential rock failure by thermal stress and swelling pressure. Additional simulations are conducted with the reduced spacing of deposition holes. The maximum temperature of bentonite buffer exceeds 100℃ as deposition hole spacing is smaller than 5.5 m. However, temperature of about 56.1% volume of bentonite buffer is below 90℃. The methodology of numerical modeling used in this study can be applied to the performance assessment of coupled THM processes for high-level radioactive waste repositories with various input parameters and geological conditions such as site-specific stress models and geothermal gradients.