• Nuclear Engineering and Technology
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• 제33권6호
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• pp.605-618
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• 2001

For the mechanical stability assessment of a deep underground high-level waste repository. computer simulations using FLAC3D were carried out and important parameters including stress ratio, depth, tunnel size, joint spacing, and joint properties were chosen from sensitivity analysis. The main effect as well as the interaction effect between the important parameters could be investigated effectively using fractional factorial design . In order to analyze the stability of the disposal tunnel and deposition hole in a discontinuous rock mass, different modelings were performed under different conditions using 3DEC and the influence of joint distribution and properties, rock properties and stress ratio could be determined. From the three dimensional modelings, it was concluded that the conceptual repository design was mechanically stable even in a discontinuous rock mass.

• Journal of Advanced Marine Engineering and Technology
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• 제25권3호
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.587-587
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• 2012

Supercapacitors, which can deliver significant energy with high power density, have attracted a lot of attention due to their potential application in energy storage. Among various oxide materials, sodium vanadate has been recognized as one of the most promising electrode materials because of high electrical conductivity. In addition, larger layer spacing of ${\beta}$-Na0.33V2O5 compared to V2O5 makes easier Li+ insertion. Moreover, ${\beta}$-Na0.33V2O5 has a tunnel like structure along b axis with 3 kinds of V site allowing it to enhance the ion intercalation by introducing three different intercalation sites along the tunnel. The tunnel can act as a fast diffusion path for ion diffusion, which can improve the overall charge storage kinetics. In this study, high quality single crystalline sodium vanadate (${\beta}$-Na0.33V2O5) nanowires were grown directly on Pt coated $SiO_2$ substrate by a facile chemical solution deposition method without employing catalyst, surfactant or carrier gas. The results show that great enhancement in capacitance was observed compared with previous reports.

• Geomechanics and Engineering
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• 제18권3호
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• pp.235-245
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• 2019

This paper presents a novel methodology for face stability assessment of rock tunnels under water table by combining the kinematical approach of limit analysis and numerical simulation. The tunnels considered in this paper are excavated in fractured rock masses characterized by the Hoek-Brown failure criterion. In terms of natural rock deposition, a more convincing case of depth-dependent mi, GSI, D and ${\sigma}_c$ is taken into account by proposing the horizontally layered discretization technique, which enables us to generate the failure surface of tunnel face point by point. The vertical distance between any two adjacent points is fixed, which is beneficial to deal with stability problems involving depth-dependent rock parameters. The pore water pressure is numerically computed by means of 3D steady-state flow analyses. Accordingly, the pore water pressure for each discretized point on the failure surface is obtained by interpolation. The parametric analysis is performed to show the influence of depth-dependent parameters of $m_i$, GSI, D, ${\sigma}_c$ and the variation of water table elevation on tunnel face stability. Finally, several design charts for an undisturbed tunnel are presented for quick calculations of critical support pressures against face failure.

• 터널과지하공간
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• 제31권4호
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• pp.289-308
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• 2021

본 연구에서는 열-수리-역학적 복합거동 수치해석을 활용하여 국내 고준위방사성폐기물 처분장의 완충재의 설계 기준 온도가 100℃ 및 125℃인 경우, 처분 간격에 따른 처분시스템의 최고 온도를 계산하고, 역학적 안정성을 확보하기 위한 암반의 조건을 도출하였다. 완충재의 설계 기준 온도를 현재와 같이 100℃로 유지할 때, 처분터널 간격이 40 m, 처분공 간격이 5.5 m인 경우와 처분터널 간격이 30 m, 처분공 간격이 6.5 m인 경우, 처분용기와 완충재가 접하는 점에서 최고 온도가 각각 99.4℃ 및 99.8℃로 계산되었다. 완충재의 설계 기준 온도를 125℃로 향상시킨 경우, 처분터널 간격을 30 m, 처분공 간격을 4.5 m까지 감소시켜 처분 면적을 KRS⁺ 기반 처분시스템 대비 55%까지 감소시킬 수 있었다. 다양한 처분 간격에 대해 암반에서의 역학적 안정성을 평가한 결과, 암반파괴가 발생하지 않기 위해서는 KRS⁺ 기반 처분시스템은 암반의 RMR 분류법의 Good rock에 해당하는 RMR 72.4 이상의 조건이어야 했다. 처분 간격이 감소할수록 암반의 RMR이 더 높아야 했으며, 처분터널 간격 30 m, 처분공 간격 4.5 m인 경우에는 RMR 87.3 이상이 되어야 암반의 파괴를 방지할 수 있었다. 그러나, 처분 이후 지하수 유입 시 벤토나이트 완충재 및 뒤채움재의 팽윤에 따른 구속압에 의한 암반 강도의 증가를 고려하면, 해석을 수행한 모든 처분 간격에 대해 암반의 RMR이 75 이상이면 역학적 안정성을 확보할 수 있었다.

• 한국자기학회지
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• 제14권1호
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• pp.13-17
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• 2004

알루미늄 산화물 절연막에 하프늄의 첨가가 미치는 영향에 관해서 연구하였다. 하프늄을 첨가할 경우 자기저항이 증가하고 자기저항의 온도의존도와 바이어스 전압의존도가 감소함을 관찰하였다. 이는 하프늄의 첨가가 알루미늄 산화물의 결함의 감소를 유발하기 때문이라 판단된다. 하프늄의 첨가된 알루미늄 산화물의 미세구조를 분석한 결과 하프늄이 알루미늄과 혼합됨이 관찰 되었다. 알루미늄과 하프늄의 혼합 금속을 절연막 형성을 위한 금속으로 사용한 결과 하프늄의 첨가된 알루미늄과 동일한 결과를 얻었다. 이로부터 하프늄이 알루미늄과 혼합하면서 절연막 내의 결함을 감소시키고 그에 따른 자기저항의 증가와 자기저항의 온도의존도와 바이어스 전압의존도를 감소시키는 결과를 가져온 것으로 판단된다.

• Progress in Superconductivity
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• 제10권2호
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• 한국세라믹학회지
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• 제49권6호
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).