• Title/Summary/Keyword: Deposition reduction

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Characterization of AZO Thin Film by Plasma Surface Treatment (플라즈마 표면 처리에 따른 AZO 박막의 특성 변화)

  • Woo, Jong-Chang;Kim, Gwan-Ha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.147-150
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    • 2019
  • There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

Research On Solutions To Slicing Errors In FDM 3D Printing Of Thin-walled Structures

  • QINGYUAN ZHANG;Byung-Chun Lee
    • International Journal of Internet, Broadcasting and Communication
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    • v.16 no.1
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    • pp.176-181
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    • 2024
  • The desktop-level 3D printing machines makes it easier for independent designers to produce collectible models. Desktop 3D printers that use FDM (Fused Deposition Modeling) technology usually use a minimum nozzle diameter of 0.4mm. When using FDM printers to make Gunpla models, Thin slice structures are prone to slicing errors, which lead to deformation of printed objects and reduction in structural strength. This paper aims to analyze the printing model that produces errors, control a single variable among the three variables of slice layer height, slice wall thickness and filament type for comparative testing, and find a way to avoid gaps. To provide assistance for using FDM printers to build models containing thin-walled structures.

Fabrication of Mo Thin Film by Hydrogen Reduction of MoO3 Powder for Back Contact Electrode of CIGS (MoO3 분말의 수소환원을 통한 CIGS계 후면 전극용 Mo 박막제조)

  • Jo, Tae Sun;Kim, Se Hoon;Kim, Young Do
    • Korean Journal of Metals and Materials
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    • v.49 no.2
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    • pp.187-191
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    • 2011
  • In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.

Selection of the Best Oxygen Carrier Particle for Syngas Fueled Chemical-Looping Combustor (합성가스 연소 매체순환식 가스연소기 적용을 위한 최적 산소공여입자 선정)

  • Ryu, Ho-Jung;Kim, Ji-Woong;Jo, Wan-Kuen;Park, Moon-Hee
    • Korean Chemical Engineering Research
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    • v.45 no.5
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    • pp.506-514
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    • 2007
  • To select the best oxygen carrier particle for syngas fueled chemical-looping combustor, the reduction reactivity and carbon deposition characteristics were determined in a thermogravimetric analyzer. Four kinds of oxygen carrier particles (NiO/bentonite, $NiO/LaAl_{11}O_{18}$, $Co_xO_y/CoAl_2O_4$, $NiO/NiAl_2O_4$) were tested with the simulated syngas (30% $H_2$, 10% $CO_2$, 60% CO) as a reduction gas. With each of these particles, the maximum conversion and oxygen transfer capacity increase with increasing the reduction temperature At the given experimental range, the optimum operating temperature to maximize oxygen transfer rate is found to be $900^{\circ}C$ and carbon deposition on the particles could avoid at the temperature above $800^{\circ}C$. Among four kinds of oxygen carrier particles, the NiO-based particles exhibits better reactivity than the CoO-based particle. Moreover, the NiO/bentonite particle produces the best reactivity based on the oxygen transfer rate and the degree of carbon deposition. The measured oxygen transfer rate increases as the metal oxide content in NiO/bentonite particle is increased thereby higher metal oxide contents could provide stable operation of chemical-looping combustor.

CFD Simulations of the Trees' Effects on the Reduction of Fine Particles (PM2.5): Targeted at the Gammandong Area in Busan (수목의 초미세먼지(PM2.5) 저감 효과에 대한 CFD 수치 모의: 부산 감만동 지역을 대상으로)

  • Han, Sangcheol;Park, Soo-Jin;Choi, Wonsik;Kim, Jae-Jin
    • Korean Journal of Remote Sensing
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    • v.38 no.5_3
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    • pp.851-861
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    • 2022
  • In this study, we analyzed the effects of trees planted in urban areas on PM2.5 reduction using a computational fluid dynamics (CFD) model. For realistic numerical simulations, the meteorological components(e.g., wind velocity components and air temperatures) predicted by the local data assimilation and prediction system (LDAPS), an operational model of the Korea Meteorological Administration, were used as the initial and boundary conditions of the CFD model. The CFD model was validated against, the PM2.5 concentrations measured by the sensor networks. To investigate the effects of trees on the PM2.5 reduction, we conducted the numerical simulations for three configurations of the buildings and trees: i) no tree (NT), ii) trees with only drag effect (TD), and iii) trees with the drag and dry-deposition effects (DD). The results showed that the trees in the target area significantly reduced the PM2.5 concentrations via the dry-deposition process. The PM2.5 concentration averaged over the domain in DD was reduced by 5.7 ㎍ m-3 compared to that in TD.

Characteristics of Redox Flow Battery Using the Soluble Lead Electrolyte (납이 용해된 전해액을 사용하는 레독스 플로우 전지의 특성)

  • An, Sang-Yong;Kim, Eung-Jin
    • Journal of the Korean Electrochemical Society
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    • v.14 no.4
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    • pp.214-218
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    • 2011
  • The electrochemical characteristics and performance of redox flow battery using the soluble lead has been evaluated. Cyclic voltammetry was performed on the materials to evaluate deposition and dissolution of lead and lead dioxide. In the negative region, a reduction peak is not observed, and on the reverse scan, on-set voltage is observed at -0.47 V(vs SCE). In the positive region, the distinct peak is observed on the forward and reverse scan. The charge/discharge experiments were carried out graphite electrode in the beaker cell. The charging(deposition) of lead occurs at around 0.5 V(vs SCE) and discharging(dissolution) of lead occur at around 0.25 V(vs SCE). The potential difference is about 0.25 V. The charging(deposition) of dioxide lead is at 1.77 V(vs SCE) and discharging(dissolution) is at around 0.95 V(vs SCE) during first cycle. On subsequent cycles, the charging of dioxide lead starts at below 1.5 V(vs SCE), after a period the voltage increase to 1.7 V(vs SCE). The voltage of discharging is stable at around 1.0 V(vs SCE).

Anti-corrosion Properties of CrN Thin Films Deposited by Inductively Coupled Plasma Assisted Sputter Sublimation for PEMFC Bipolar Plates (유도 결합 플라즈마-스퍼터 승화법을 이용한 고분자 전해질 연료전지 분리판용 CrN 박막의 내식성연구)

  • You, Younggoon;Joo, Junghoon
    • Journal of the Korean institute of surface engineering
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    • v.46 no.4
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    • pp.168-174
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    • 2013
  • In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

Cyclic Voltammetry Study on Electrodeposition of CuInSe2 Thin Films (Cyclic Voltammetry를 이용한 CuInSe2 박막의 전기화학적 전착 연구)

  • Hong, Soonhyun;Lee, Hyunju;Kim, Yangdo
    • Korean Journal of Materials Research
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    • v.23 no.11
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    • pp.638-642
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    • 2013
  • Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

Role of TGF-β1/SMADs signalling pathway in resveratrol-induced reduction of extracellular matrix deposition by dexamethasone-treated human trabecular meshwork cells

  • Amy Suzana Abu Bakar;Norhafiza Razali;Renu Agarwal;Igor Iezhitsa;Maxim A. Perfilev;Pavel M. Vassiliev
    • The Korean Journal of Physiology and Pharmacology
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    • v.28 no.4
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    • pp.345-359
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    • 2024
  • Deposition of extracellular matrix (ECM) in the trabecular meshwork (TM) increases aqueous humour outflow resistance leading to elevation of intraocular pressure (IOP) in primary open-angle glaucoma, which remains the only modifiable risk factor. Resveratrol has been shown to counteract the steroid-induced increase in IOP and increase the TM expression of ECM proteolytic enzymes; however, its effects on the deposition of ECM components by TM and its associated pathways, such as TGF-β-SMAD signalling remain uncertain. This study, therefore, explored the effects of trans-resveratrol on the expression of ECM components, SMAD signalling molecules, plasminogen activator inhibitor-1 and tissue plasminogen activator in dexamethasone-treated human TM cells (HTMCs). We also studied the nature of molecular interaction of trans-resveratrol with SMAD4 domains using ensemble docking. Treatment of HTMCs with 12.5 µM trans-resveratrol downregulated the dexamethasone-induced increase in collagen, fibronectin and α-smooth muscle actin at gene and protein levels through downregulation of TGF-β1, SMAD4, and upregulation of SMAD7. Downregulation of TGF-β1 signalling by trans-resveratrol could be attributed to its effect on the transcriptional activity due to high affinity for the MH2 domain of SMAD4. These effects may contribute to resveratrol's IOP-lowering properties by reducing ECM deposition and enhancing aqueous humour outflow in the TM.

Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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